Patent US4859615A successfully refreshed from Google Patents.
US4859615A
Expired / Lapsed
US
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Semiconductor memory cell capacitor and method for making the same
Assignee: Mitsubishi Electric Corp
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Filing: 1987-11-09
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Granted: 1989-08-22
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Expires: 2007-11-09
Abstract
Abstract A semiconductor memory device includes a trench formed along the circumference of a planar type memory capacitor, a gate insulating film and a memory cell plate being formed on the side wall of the trench, whereby the side wall of the trench is also used as a memory capacitor. At the bottom of the trench, a thick insulating film is formed to be a cell separating region.
Inventors
- 👤 Katsuhiro Tsukamoto
- 👤 Takayuki Matsukawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:09
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37; H10B12/01; H10B12/02; H10B12/03; H10B12/038
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
163 words
A method of manufacturing a semiconductor memory device comprising memory cells arrayed on a common semiconductor substrate of a particular conductivity type, each cell having a capacitance region for storing an electric charge, comprising the steps of: forming in the substrate a heavily doped region of the particular conductivity type; etching into the substrate a circumferential trench that circumscribes a major portion of said capacitance region of said cell, with said heavily doped region underlying and surrounding said trench; forming on the substrate a thin dielectric film; forming on said dielectric film a conductive film to provide a capacitor having a planar portion on a planar region of said substrate and an edge portion on a sidewall of said trench, said planar portion of said capacitor extending outward from said trench and, together with said edge portion, establishing said capacitance region of one said cell; and depositing an insulating layer within said trench, beneath said capacitor, to establish isolation from an adjacent cell.
Claim 2
Independent Claim
163 words
A method of manufacturing a semiconductor memory device comprising memory cells arrayed on a common semiconductor substrate of a particular conductivity type, each cell having a capacitance region for storing an electric charge, comprising the steps of: forming in the substrate a heavily doped region of the particular conductivity type; etching into the substrate a circumferential trench that circumscribes a major portion of said capacitance region of said cell, with said heavily doped region underlying and surrounding said trench; forming on the substrate a thin dielectric film; forming on said dielectric film a conductive film to provide a capacitor having a planar portion on a planar region of said substrate and an edge portion on a sidewall of said trench, said planar portion of said capacitor extending outward from said trench and, together with said edge portion, establishing said capacitance region of one said cell; and depositing an insulating layer within said trench, beneath said capacitor, to establish isolation from an adjacent cell.
Claim 3
Dependent Claim
65 words
A method for manufacturing a semiconductor memory device according to claim 1, wherein said step of forming said thin dielectric film comprises the steps of forming an oxidation-resistant silicon nitride film on the side wall of said trench and on the surface of said capacitance region; and performing selective thermal oxidation at a bottom of the trench using said silicon nitride film as a mask.
Claim 4
Dependent Claim
71 words
A method for manufacturing a semiconductor memory device according to claim 2, wherein said step of forming the silicon nitride film to be said mask comprises the steps of forming a silicon nitride film on the entire exposed surface of said semiconductor substrate after forming said trench by etching; and leaving said silicon nitride film only on the side wall of said trench by anisotropically etching said formed silicon nitride film.
Claim 5
Dependent Claim
63 words
A method for manufacturing a semiconductor memory device according to claim 3, further comprising the step of performing ion implantation of an impurity only at the bottom of said trench prior to the step of forming a thin insulating film at the bottom of said trench, whereby a channel cutting layer is formed at the same time of forming said thin dielectric film.
Claim 6
Dependent Claim
21 words
A method for manufacturing a semiconductor memory device according to claim 4, wherein said impurity for said ion implantation is boron.
Claim 7
Dependent Claim
47 words
A method of manufacturing a semiconductor memory device according to claim 1, further comprising the step of planarizing the surface of the semiconductor substrate by filling an insulator in said trench after the step of forming the electrode layer on the side wall of said formed trench.
Claim 8
Dependent Claim
27 words
A method for manufacturing a semiconductor memory device according to claim 1, wherein the angle of inclination of said side wall of said trench is approximately 90°.
Claim 9
Dependent Claim
28 words
A method for manufacturing a semiconductor memory device according to claim 1, wherein the angle of inclination of the side wall of said trench is 50° to 80°.
Claim 10
Dependent Claim
91 words
A method for manufacturing a semiconductor memory device according to claim 1, wherein the step of forming said heavily doped region comprises the steps of depositing a photoresist pattern on said substrate, ion implanting a first layer of a heavily doped impurity having a first conductivity type into said substrate in a region defined by said photoresist pattern, and forming in said substrate a second layer of a heavily doped impurity having a second conductivity type overlying the first layer and in contact with the side wall of the circumferential trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |