Patent US1453426A successfully refreshed from Google Patents.
Patent US4835588A successfully refreshed from Google Patents.
US4835588A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor
Assignee: Fujitsu Ltd
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Filing: 1979-03-09
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Granted: 1989-05-30
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Expires: 1999-03-09
Abstract
Abstract PCT No. PCT/JP79/00059 Sec. 371 Date Nov. 2, 1979 Sec. 102(e) Date Nov. 2, 1979 PCT Filed Mar. 9, 1979 PCT Pub. No. WO79/00736 PCT Pub. Date Oct. 4, 1979.In a transistor wherein a plurality of emitter regions are formed in a base region, resistor regions which have the opposite conductivity type to the conductivity type of the emitter regions and which act as stabilizing resistors, are formed in the emitter regions. The resistors regions are commonly connected through an emitter wiring electrode or electrodes, and each of the resistor regions is connected to the emitter region corresponding thereto. In order to allow the conductor for connecting each of the resistor regions to the emitter region corresponding thereto to be arranged on a chip without intersecting the emitter wiring electrode or electrodes, the emitter regions are arranged in a line or lines, and the resistor regions are formed in the emitter regions so as to intersect the line or lines.
Inventors
- 👤 Yoshiaki Nawata
- 👤 Kunihisa Ono
- 👤 Koji Takahashi
- 👤 Yoshiyasu Kanno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/135; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
188 words
A transistor comprising: a collector region of a first conductivity type; a base region of a second conductivity type, opposite to the first conductivity type, formed in said collector region; a plurality of substantially rectangular shaped emitter regions of the first conductivity type formed separately in said base region and arranged substantially along a line which passes through the center of each of said emitter regions; stabilizing resistor regions of the second conductivity type respectively formed in said emitter regions; emitter wiring electrodes respectively connected to said stabilizing resistor regions at points spaced from the line which passes through the center of each of said emitter regions, said stabilizing resistor regions being arranged in a direction substantially orthogonal to the direction in which said emitter wiring electrodes are extended; and conductive means, extending in parallel with said emitter wiring electrodes and along the line which passes through the center of each of said emitter regions, for connecting said stabilizing resistor regions and said emitter regions, said conductive means contacting each of said emitter regions at two points which are on opposite sides of the corresponding stabilizing resistor region.
Claim 2
Dependent Claim
188 words
A transistor comprising: a collector region of a first conductivity type; a base region of a second conductivity type, opposite to the first conductivity type, formed in said collector region; a plurality of substantially rectangular shaped emitter regions of the first conductivity type formed separately in said base region and arranged substantially along a line which passes through the center of each of said emitter regions; stabilizing resistor regions of the second conductivity type respectively formed in said emitter regions; emitter wiring electrodes respectively connected to said stabilizing resistor regions at points spaced from the line which passes through the center of each of said emitter regions, said stabilizing resistor regions being arranged in a direction substantially orthogonal to the direction in which said emitter wiring electrodes are extended; and conductive means, extending in parallel with said emitter wiring electrodes and along the line which passes through the center of each of said emitter regions, for connecting said stabilizing resistor regions and said emitter regions, said conductive means contacting each of said emitter regions at two points which are on opposite sides of the corresponding stabilizing resistor region.
Claim 3
Dependent Claim
34 words
A transistor as set forth in claim 1, further comprising an insulation layer covering the surface of said transistor, wherein said emitter wiring electrodes comprise an electrode metal layer formed on the insulation layer.
Claim 4
Dependent Claim
71 words
A transistor as set forth in claim 2, further comprising: additional regions arranged in a matrix formation within said base region and having an impurity concentration higher than that of said base region; and at least one base wiring electrode formed on said insulation layer so as to linearly extend substantially in parallel with said emitter wiring electrodes, said at least one base wiring electrode being connected to said additional regions.
Claim 5
Dependent Claim
174 words
A transistor comprising: a semiconductor substrate; a collector region of a first conductivity type formed on said semiconductor substrate; a base region of a second conductivity type, opposite to the first conductivity type, formed contiguous to said collector region; a plurality of substantially rectangular shaped emitter regions of the first conductivity type formed within said base region, said plurality of emitter regions being arranged in one or more lines; resistor regions of the second conductivity type, respectively formed within said emitter regions, each of said resistor regions acting as a stabilizing resistor and having a longitudinal axis which crosses one of the one or more lines; at least one pair of linear emitter wiring electrodes commonly connected to the respective ends of said resistor regions; and conductive means, formed adjacent to said at least one pair of linear emitter wiring electrodes and along the center of said emitter regions, for connecting the middle portions of said resistor regions to the corresponding emitter regions without contacting said at least one pair of emitter wiring electrodes.
Claim 6
Dependent Claim
174 words
A transistor comprising: a semiconductor substrate; a collector region of a first conductivity type formed on said semiconductor substrate; a base region of a second conductivity type, opposite to the first conductivity type, formed contiguous to said collector region; a plurality of substantially rectangular shaped emitter regions of the first conductivity type formed within said base region, said plurality of emitter regions being arranged in one or more lines; resistor regions of the second conductivity type, respectively formed within said emitter regions, each of said resistor regions acting as a stabilizing resistor and having a longitudinal axis which crosses one of the one or more lines; at least one pair of linear emitter wiring electrodes commonly connected to the respective ends of said resistor regions; and conductive means, formed adjacent to said at least one pair of linear emitter wiring electrodes and along the center of said emitter regions, for connecting the middle portions of said resistor regions to the corresponding emitter regions without contacting said at least one pair of emitter wiring electrodes.
Claim 7
Dependent Claim
46 words
A transistor as set forth in claim 4, further comprising an insulation layer formed on said base region, said emitter regions, and said resistor regions, wherein said at least one pair of linear emitter wiring electrodes and said conductive means are formed on said insulation layer.
Claim 8
Dependent Claim
70 words
A transistor as set forth in claim 4, further comprising: an insulation layer formed on said base region, said emitter regions and said resistor regions; and at least one base wiring electrode formed on said insulation layer and connected to said base region, said at least one base wiring electrode being disposed so as to extend substantially in parallel with said at least one pair of linear emitter wiring electrodes.
Claim 9
Dependent Claim
57 words
A transistor as set forth in claim 4, wherein each of said emitter regions includes a peripheral portion and a central portion, wherein said peripheral portion extends further into said base region than said central portion, and wherein each of said resistor regions is formed at said central portion of the corresponding one of said emitter regions.
Claim 10
Dependent Claim
191 words
A transistor comprising: a semiconductor substrate; a collector region of a first conductivity type formed on said semiconductor substrate; a base region of a second conductivity type, opposite to the first conductivity type, formed on said collector region; a plurality of emitter regions of the first conductivity type formed in said base region, said emitter regions each having the shape of an annular ring and having an inactive portion formed within the annular ring, said emitter regions being arranged in one or more lines; resistor regions of the second conductivity type formed in said inactive regions, respectively, to act as stabilizing resistors, said resistor regions having longitudinal axes which intersect the line or lines of said emitter regions; at least one pair of linear emitter wiring electrodes commonly connected to the respective ends of said resistor regions; and conductive means, formed adjacent said at least one pair of linear emitter wiring electrodes and along the line or lines of said emitter regions without contacting said at least one pair of linear emitter wiring electrodes, for connecting the middle portions of said resistor regions to the corresponding ones of said emitter regions.
Claim 11
Dependent Claim
191 words
A transistor comprising: a semiconductor substrate; a collector region of a first conductivity type formed on said semiconductor substrate; a base region of a second conductivity type, opposite to the first conductivity type, formed on said collector region; a plurality of emitter regions of the first conductivity type formed in said base region, said emitter regions each having the shape of an annular ring and having an inactive portion formed within the annular ring, said emitter regions being arranged in one or more lines; resistor regions of the second conductivity type formed in said inactive regions, respectively, to act as stabilizing resistors, said resistor regions having longitudinal axes which intersect the line or lines of said emitter regions; at least one pair of linear emitter wiring electrodes commonly connected to the respective ends of said resistor regions; and conductive means, formed adjacent said at least one pair of linear emitter wiring electrodes and along the line or lines of said emitter regions without contacting said at least one pair of linear emitter wiring electrodes, for connecting the middle portions of said resistor regions to the corresponding ones of said emitter regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |