Transistor with distributed resistor between emitter lead and emitter region

Claim 2

IN A SEMICONDUCTOR DEVICE COMPRISING: A SEMICONDUCTIVE BODY HAVING A FIRST REGION OF ONE CONDUCTIVITY TYPE, SAID FIRST REGION BEING IMMEDIATELY ADJACENT ONE SURFACE OF SAID BODY; A SECOND REGION OF THE OTHER CONDUCTIVITY TYPE IN SAID BODY ADJACENT SAID FIRST REGION; A FIRST P-N JUNCTION BETWEEN SAID FIRST AND SECOND REGIONS; A THIRD REGION OF SAID ONE CONDUCTIVITY TYPE IN SAID BODY ADJACENT SAID SECOND REGION; A SECOND P-N JUNCTION BETWEEN SAID SECOND AND THIRD REGIONS; A FIRST ELECTRICAL CONTACT OT SAID FIRST REGION, A SECOND ELECTRICAL CONTACT TO SAID SECOND REGION, AND A THIRD ELECTRICAL CONTACT TO SAID THIRD REGION; AND, THE IMPROVEMENT COMPRISING A LAYER OF RESISTIVE MATERIAL BETWEEN SAID FIRST REGION AND SAID FIRST ELECTRICAL CONTACT, SAID LAYER HAVING A SHEET RESISTIVITY OF ABOUT 0.1 TO 10 OHMS PER SQUARE.

Claim 3

IN A POWER TRANSISTOR HAVING A SURFACE, THE COMBINATION COMPRISING: A COLLECTOR REGION HAVING A FIRST CONDUCTIVITY TYPE; A BASE REGION ADJACENT SAID COLLECTOR REGION HAVING A CONDUCTIVITY TYPE OPPOSITE TO SAID COLLECTOR REGION AND EXTENDING TO SAID SURFACE; AN EMITTER REGION WITHIN AND ADJACENT SAID BASE REGION HAVING THE SAME CONDUCTIVITY TYPE AS SAID COLLECTOR REGION AND EXTENDING TO SAID SURFACE; AN EMITTER CONTACT; AN INSULATING LAYER COVERING SAID SURFACE EXCEPT A PORTION OF THE EMITTER REGION WHICH EXTENDS TO SAID SURFACE AND IS ADJACENT TO SAID BASE REGION, WHEREBY A PORTION OF SAID EMITTER REGION EXTENDING TO THE SURFACE IS EXPOSED; AND, A DISTRIBUTED RESISTOR FILM FORMED OVER SAID INSULATING LAYER ELECTRICALLY CONNECTED BETWEN SAID EMITTER REGION AND SAID EMITTER CONTACT, SAID FILM BEING SUFFICIENTLY DISTRIBUTED OVER SAID INSULATING LAYER SO THAT HOT SPOT FORMATION IS CONTROLLED AND DAMAGE TO SAID TRANSISTOR IS PREVENTED.

Claim 4

IN A POWER TRANSISTOR HAVING A SURFACE, THE COMBINATION COMPRISING: A COLLECTOR REGION HAVING A FIRST CONDUCTIVITY TYPE; A BASE REGION ADJACENT SAID COLLECTOR REGION HAVING A CONDUCTIVITY TYPE OPPOSITE TO SAID COLLECTOR REGION AND EXTENDING TO SAID SURFACE; AN EMITTER REGION WITHIN AND ADJACENT SAID BASE REGION HAVING THE SAME CONDUCTIVITY TYPE AS SAID COLLECTOR REGION AND EXTENDING TO SAID SURFACE; AN EMITTER CONTACT; AN INSULATING LAYER COVERING SAID SURFACE EXCEPT A PORTION OF THE EMITTER REGION WHICH EXTENDS TO SAID SURFACE AND IS ADJACENT TO SAID BASE REGION, WHEREBY A PORTION OF SAID EMITTER REGION EXTENDING TO THE SURFACE IS EXPOSED; AND, A DISTRIBUTED RESISTOR FILM FORMED OVER SAID INSULATING LAYER ELECTRICALLY CONNECTED BETWEN SAID EMITTER REGION AND SAID EMITTER CONTACT, SAID FILM BEING SUFFICIENTLY DISTRIBUTED OVER SAID INSULATING LAYER SO THAT HOT SPOT FORMATION IS CONTROLLED AND DAMAGE TO SAID TRANSISTOR IS PREVENTED.