Pnpn semiconductor translating device and method of construction

Claim 1

A SEMICONDUCTOR SIGNAL-TRANSLATING DEVICE COMPRISING: A UNITARY BODY OF SEMICONDUCTOR MATERIAL INCLUDING A FIRST ZONE COMPRISING A RECRYSTALLIZED REGION OF ONE CONDUCTIVITY TYPE CONTIGUOUS WITH A DIFFUSED REGION OF SAID ONE TYPE, A SECOND ZONE AND A THIRD ZONE OF THE OPPOSITE CONDUCTIVITY TYPE, EACH OF SAID REGIONS OF SAID FIRST ZONE BEING CONTIGUOUS WITH ONE OF SAID ZONES OF THE OPPOSITE CONDUCTIVITY TYPE AND TOGETHER FORM A FIRST TRANSISTOR SECTION, AND FURTHER INCLUDING A FOURTH ZONE OF SAID ONE CONDUCTIVITY TYPE CONTIGUOUS WITH ONE OF SAID ZONES OF THE OPPOSITE CONDUCTIVITY TYPE AND FORMING THEREWITH AND WITH SAID FIRST ZONE A SECOND TRANSISTOR SECTION, THE OTHER OF SAID ZONES OF SAID OPPOSITE CONDUCTIVITY TYPE CONSTITUTING THE EMITTER OF SAID FIRST SECTION WHICH, WITH SAID RECRYSTALLIZED REGION, PROVIDE FOR SAID FIRST SECTION A CURRENT GAIN OF SUBSTANTIALLY LESS THAN UNITY AND IMPART TO SAID FIRST SECTION A HIGH BREAKDOWN VOLTAGE CHARACTERISTIC, SAID SECOND TRANSISTOR SECTION HAVING A CHARACTERISTIC WHICH AFFORDS A HIGHER CURRENT GAIN THAN SAID FIRST SECTION AND IS EFFECTIVE TO PROVIDE FOR SAID DEVICE A DESIRED OVERALL CURRENT GAIN; AND INDIVIDUAL ELECTRICAL CONNECTIONS TO SAID DEVICE.