US3519898A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High power semiconductor device having a plurality of emitter regions
Assignee: NEC Corp
•
Filing: 1968-01-30
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Granted: 1970-07-07
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Expires: 1988-01-30
Abstract
No abstract record available.
Inventors
- 👤 Teruo Nakatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:27
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/135; H10D99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-07-06 | 1974-01-05 | 1974-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-07-06 | 1978-01-05 | 1978-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-07-06 | 1982-01-05 | 1982-07-07 | $7700.00 | Window Closed / Lapsed |