Patent US4835118A successfully refreshed from Google Patents.
US4835118A
Expired / Lapsed
US
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Non-destructive energy beam activated conductive links
Assignee: Inmos Corp
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Filing: 1987-03-23
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Granted: 1989-05-30
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Expires: 2007-03-23
Abstract
Abstract A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the region to recrystallize. This makes the link electrically conductive thereby joining the circuit elements to a corresponding spare element on the semiconductor. The method permits for high density packing of circuit elements and creates a link without producing bulk material movement.
Inventors
- 👤 Robert E. Jones, Jr.
- 👤 Lee Kammerdiner
- 👤 Michael R. Reeder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; H10W20/01; H10W20/031; H10W20/064; H10W20/065; Y; Y10; Y10S; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
158 words
A method of manufacturing semiconductor devices having selectively activatable links between circuit elements comprising the steps of: forming a conductive semiconductor circuit element on a semiconducting substrate; forming a dielectric layer over at least said semiconductor circuit element; forming an opening in said dielectric layer to expose a portion of said semiconductor circuit element; creating a region having a very low conductivity in said exposed portion of said semiconductor circuit element by introducing into said exposed portion ions in an amount insufficient to compensate for the concentration of the previously existing dopants; forming at least one circuit on said semiconducting substrate; forming a conductive path on top of said region thereby joining said circuit element to said circuit through said opening; and selectively activating said region below said conductive path with an energy beam to make said region conductive thereby creating an electrically transmissive contact between said semiconductor circuit element and said circuit formed on said semiconducting substrate.
Claim 2
Independent Claim
158 words
A method of manufacturing semiconductor devices having selectively activatable links between circuit elements comprising the steps of: forming a conductive semiconductor circuit element on a semiconducting substrate; forming a dielectric layer over at least said semiconductor circuit element; forming an opening in said dielectric layer to expose a portion of said semiconductor circuit element; creating a region having a very low conductivity in said exposed portion of said semiconductor circuit element by introducing into said exposed portion ions in an amount insufficient to compensate for the concentration of the previously existing dopants; forming at least one circuit on said semiconducting substrate; forming a conductive path on top of said region thereby joining said circuit element to said circuit through said opening; and selectively activating said region below said conductive path with an energy beam to make said region conductive thereby creating an electrically transmissive contact between said semiconductor circuit element and said circuit formed on said semiconducting substrate.
Claim 3
Dependent Claim
28 words
A method as in claim 1 including the additional step of forming a passivation dielectric layer over at least said conductive path prior to selectively activating said region.
Claim 4
Dependent Claim
32 words
A method according to claim 2 wherein said energy beam passes through said passivation dielectric layer to raise said region temperature to greater than 600° C. without affecting said passivation dielectric layer.
Claim 5
Dependent Claim
32 words
A method as in claim 1 wherein said region is created by introducing into said exposed portion ions of the same conductivity type as the dopant previously existing in said exposed portion.
Claim 6
Dependent Claim
32 words
A method according to claim 1 wherein said doped semiconductor circuit element is formed of N + doped polycrystalline silicon and said creating step includes introducing phosphorus ions into said exposed portion.
Claim 7
Dependent Claim
18 words
A method as in claim 1 wherein said doped semiconductor circuit element is formed in said semiconducting substrate.
Claim 8
Dependent Claim
28 words
A method as in claim 6 wherein said doped semiconductor circuit element is N + doped and said creating step includes introducing phosphorus ions into said exposed portion.
Claim 9
Dependent Claim
14 words
A method according to claim 1 wherein said energy beam comprises an electron beam.
Claim 10
Dependent Claim
14 words
A method according to claim 1 wherein said energy beam comprises a laser beam.
Claim 11
Dependent Claim
15 words
A method according to claim 1 wherein said energy beam comprises a green light laser.
Claim 12
Dependent Claim
23 words
A method according to claim 1 wherein said energy beam comprises a laser having an energy of 0.05 to 1.0 J/cm 2 .
Claim 13
Dependent Claim
34 words
A method according to claim 1 wherein said creating step includes introducing ions into said exposed portion in a dose of substantially 1×10 15 /cm 2 with an energy of 30 to 300 keV.
Claim 14
Dependent Claim
27 words
A method according to claim 1 wherein said creating step produces said region extending at least partially into said exposed portion of said doped semiconductor circuit element.
Claim 15
Dependent Claim
22 words
A method according to claim 1 wherein said conductive path is a metal layer ranging from 5000 to 10,000 angstroms in depth.
Claim 16
Dependent Claim
20 words
A method according to claim 1 wherein said conductive path is a metal layer and wherein said metal is tungsten.
Claim 17
Dependent Claim
23 words
A method according to claim 1 wherein said region recrystallizes and becomes conductive after being raised to a temperature greater than 600° C.
Claim 18
Independent Claim
172 words
A method of manufacturing semiconductor devices having selectively activatable links between circuit elements comprising the steps of: forming a conductive semiconductor circuit element on a semiconducting substrate; forming a dielectric layer over at least said semiconductor circuit element; forming an opening in said dielectric layer to expose a portion of said semiconductor circuit element; creating a region having very low conductivity in said exposed portion of said semiconductor circuit by introducing into said exposed portion ions of the opposite conductivity type as the dopant previously existing in said exposed portion in an amount sufficient to create said region but insufficient to compensate the initial dopant concentration; forming at least one circuit on said semiconducting substrate; forming a conductive path on top of said region thereby joining said circuit element to said circuit through said opening; and selectively activating said region below said conductive path with an energy beam to make said region conductive thereby creating an electrically transmissive contact between said semiconductor circuit element and said circuit formed on said semiconducting substrate.
Claim 19
Independent Claim
172 words
A method of manufacturing semiconductor devices having selectively activatable links between circuit elements comprising the steps of: forming a conductive semiconductor circuit element on a semiconducting substrate; forming a dielectric layer over at least said semiconductor circuit element; forming an opening in said dielectric layer to expose a portion of said semiconductor circuit element; creating a region having very low conductivity in said exposed portion of said semiconductor circuit by introducing into said exposed portion ions of the opposite conductivity type as the dopant previously existing in said exposed portion in an amount sufficient to create said region but insufficient to compensate the initial dopant concentration; forming at least one circuit on said semiconducting substrate; forming a conductive path on top of said region thereby joining said circuit element to said circuit through said opening; and selectively activating said region below said conductive path with an energy beam to make said region conductive thereby creating an electrically transmissive contact between said semiconductor circuit element and said circuit formed on said semiconducting substrate.
Claim 20
Dependent Claim
28 words
A method as in claim 17 including the additional step of forming a passivation dielectric layer over at least said conductive path prior to selectively activating said region.
Claim 21
Dependent Claim
32 words
A method as in claim 18 wherein said energy beam passes through said passivation dielectric layer to raise said region temperature to greater than 600° C. without affecting said passivation dielectric layer.
Claim 22
Dependent Claim
18 words
A method as in claim 17 wherein said doped semiconductor circuit element is formed in said semiconducting substrate.
Claim 23
Dependent Claim
14 words
A method according to claim 17 wherein said energy beam comprises an electron beam.
Claim 24
Dependent Claim
14 words
A method according to claim 17 wherein said energy beam comprises a laser beam.
Claim 25
Dependent Claim
15 words
A method according to claim 17 wherein said energy beam comprises a green light laser.
Claim 26
Dependent Claim
23 words
A method according to claim 17 wherein said energy beam comprises a laser having an energy of 0.05 to 1.0 J/cm 2 .
Claim 27
Dependent Claim
34 words
A method according to claim 17 wherein said creating step includes introducing ions into said exposed portion in a dose of substantially 1×10 15 cm 2 with an energy of 30 to 300 keV.
Claim 28
Dependent Claim
27 words
A method according to claim 17 wherein said creating step produces said region extending at least partially into said exposed portion of said doped semiconductor circuit element.
Claim 29
Dependent Claim
22 words
A method according to claim 17 wherein said conductive path is a metal layer ranging from 5000 to 10,000 angstroms in depth.
Claim 30
Dependent Claim
20 words
A method according to claim 17 wherein said conductive path is a metal layer and wherein said metal is tungsten.
Claim 31
Dependent Claim
23 words
A method according to claim 17 wherein said region recrystallizes and becomes conductive after being raised to a temperature greater than 600° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |