Infrared ray detection device

Claim 2

An infrared ray detection device which comprises a p-type Si crystal substrate, an n-type Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said p-type Si crystal substrate, a potential well formed in said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, means for causing an electric charge to be stored in said potential well prior to application of incident rays to be detected, and an n-type Si crystal layer formed on said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, and which is coupled with a transfer device incorporated with said p-type Si crystal substrate comprising means for transferring from said infrared ray detection device said electric charge stored beforehand in said potential well upon irradiation of said electric charge by said incident infrared rays to be detected.

Claim 3

An infrared ray detection device which comprises an Si crystal substrate, a Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said Si crystal substrate, a Si crystal layer formed on said Ge x Si 1-x (0<x≦1) mixed crystal layer, means for producing band discontinuities, Ec inside a conduction band and Ev inside a valence band, at respective heretojunctions between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal substrate and between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal layer, said band discontinuities comprising potential barriers in order to form a potential well in said Ge x Si 1-x (0<x≦1) mixed crystal layer in which an electric charge is stored prior to application of incident rays to be detected, and means for transferring said electric charge acting as a signal carrier from said potential well into one of said Si crystal layer and said Si crystal substrate when said electric charge is irradiated by said incident infrared rays to be detected, and which is coupled with a transfer device incorporated with said Si crystal substrate comprising means for transferring said electric charge from said infrared ray detection device.

Claim 4

An infrared ray detection device which comprises an Si crystal substrate, a Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said Si crystal substrate, a Si crystal layer formed on said Ge x Si 1-x (0<x≦1) mixed crystal layer, means for producing band discontinuities, Ec inside a conduction band and Ev inside a valence band, at respective heretojunctions between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal substrate and between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal layer, said band discontinuities comprising potential barriers in order to form a potential well in said Ge x Si 1-x (0<x≦1) mixed crystal layer in which an electric charge is stored prior to application of incident rays to be detected, and means for transferring said electric charge acting as a signal carrier from said potential well into one of said Si crystal layer and said Si crystal substrate when said electric charge is irradiated by said incident infrared rays to be detected, and which is coupled with a transfer device incorporated with said Si crystal substrate comprising means for transferring said electric charge from said infrared ray detection device.

Claim 5

An infrared ray detection system comprising: an infrared ray detection device which comprises a p-type Si crystal substrate, an n-type Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said p-type Si crystal substrate, a potential well formed in said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, means for causing an electric charge to be stored in said potential well prior to application of incident rays to be detected, and an n-type Si crystal layer formed on said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, and a transfer device coupled to said detection device comprising means for transferring from said infrared ray detection device an electric charge stored beforehand in said potential well upon irradiation of said electric charge by said incident infrared rays to be detected.

Claim 6

An infrared ray detection system comprising: an infrared ray detection device which comprises a p-type Si crystal substrate, an n-type Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said p-type Si crystal substrate, a potential well formed in said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, means for causing an electric charge to be stored in said potential well prior to application of incident rays to be detected, and an n-type Si crystal layer formed on said n-type Ge x Si 1-x (0<x≦1) mixed crystal layer, and a transfer device coupled to said detection device comprising means for transferring from said infrared ray detection device an electric charge stored beforehand in said potential well upon irradiation of said electric charge by said incident infrared rays to be detected.

Claim 7

An infrared ray detection system comprising: an infrared ray detection device comprising a Si crystal substrate, Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said Si crystal substrate, a Si crystal layer formed on said Ge x Si 1-x (0<x≦1) mixed crystal layer, means for producing band discontinuities, Ec inside a conduction band and Ev inside a valence band, at respective heretojunctions between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal substrate and between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal layer, said band discontinuities comprising potential barriers in order to form a potential well in said Ge x Si 1-x (0<x≦1) mixed crystal layer in which an electric charge is stored prior to application of incident rays to be detected, and means for transferring said electric charge acting as a signal carrier from said potential well into one of said crystal layer and said Si crystal substrate when said electric charge is irradiated by said incident infrared rays to be detected, and a transfer device coupled to said infrared ray detection device comprising means for transferring said electric charge from said infrared ray detection device.

Claim 8

An infrared ray detection system comprising: an infrared ray detection device comprising a Si crystal substrate, Ge x Si 1-x (0<x≦1) mixed crystal layer formed on said Si crystal substrate, a Si crystal layer formed on said Ge x Si 1-x (0<x≦1) mixed crystal layer, means for producing band discontinuities, Ec inside a conduction band and Ev inside a valence band, at respective heretojunctions between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal substrate and between said Ge x Si 1-x (0<x≦1) mixed crystal layer and said Si crystal layer, said band discontinuities comprising potential barriers in order to form a potential well in said Ge x Si 1-x (0<x≦1) mixed crystal layer in which an electric charge is stored prior to application of incident rays to be detected, and means for transferring said electric charge acting as a signal carrier from said potential well into one of said crystal layer and said Si crystal substrate when said electric charge is irradiated by said incident infrared rays to be detected, and a transfer device coupled to said infrared ray detection device comprising means for transferring said electric charge from said infrared ray detection device.