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JPS5867073A Expired / Lapsed JP ⏱️ 0.0 years remaining

Solar battery

Assignee: National Institute of Advanced Industrial Science and Technology
•
Filing: 1981-10-19
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Granted: —
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Expires: 2001-10-19
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Abstract

Abstract PURPOSE:To improve the efficiency of a solar battery, by doping an impurity into a specific layer of a plurality of layers constituting an active layer resulting in the reduction of potential barriers against carriers. CONSTITUTION:The potential barrier against negative holes is eliminated resulting in the improvement of the photocurrent by a method wherein amorphous SiGe layers 3a-3b slightly doped into an n or a p type are used, the Fermi-level is shifted, and then the upper part of the band of valence electrons is changed horizontal. The method is effective particularly when the doping can be performed without decreasing so much the characteristic as a solar battery and also is applied when the active layer is not only a double layered but a multi-layered element.

Inventors

  • 👤 Kazuhiko Sato
  • 👤 和彦 佐藤
  • 👤 Genshiro Nakamura
  • 👤 中村 源四郎
  • 👤 Yoshinori Yukimoto
  • 👤 行本 善則

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 07:38
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548

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References Cited (Backward Citations)

JPS5511329A Cited
JPS5513938A Cited
JPS5513939A Cited

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