Patent US4816126A successfully refreshed from Google Patents.
US4816126A
Expired / Lapsed
US
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Method for forming a planarized thin film
Assignee: NTT Inc
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Filing: 1987-07-20
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Granted: 1989-03-28
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Expires: 2007-07-20
Abstract
Abstract Charged particles are irradiated over a thin film formed on a convex and concave surface of a substrate or over a thin film being formed on a convex and concave surface of a substrate. During the irradiation, raise in temperature of the thin film and impingement of charged particles cause the fluidization of the thin film, so that a planarized thin film is formed within a short period of time.
Inventors
- 👤 Kazuyoshi Kamoshida
- 👤 Hiroaki Nakamura
- 👤 Takao Amazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:31
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P95/04; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
91 words
A method for forming a planarized aluminum or aluminum alloy film, comprising the steps of: forming an aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions; and irradiating charged particles accelerated by a bias voltage having an absolute value greater than 850 volts over said film so that said film is fluidized by a temperature rise of said film and bombardment of said film with said charged particles, and said temperature of said film is less than the melting point of said film.
Claim 2
Independent Claim
91 words
A method for forming a planarized aluminum or aluminum alloy film, comprising the steps of: forming an aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions; and irradiating charged particles accelerated by a bias voltage having an absolute value greater than 850 volts over said film so that said film is fluidized by a temperature rise of said film and bombardment of said film with said charged particles, and said temperature of said film is less than the melting point of said film.
Claim 3
Dependent Claim
49 words
A method for forming a planarized film as claimed in claim 1, wherein after the formation of said film on said substrate, said charged particles are irradiated on said film after said substrate has been heated from the exterior or while said substrate is being heated from the exterior.
Claim 4
Dependent Claim
42 words
A method for forming a planarized film as claimed in claim 2, wherein a temperautre of said film in case of the irradiation with said charged particles and the heating from the exterior is less than a melting point of said film.
Claim 5
Independent Claim
95 words
A method for forming a planarized aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions, said method comprising the steps of: irradiating charged particles accelerated by a bias voltage having an absolute value greater than 700 volts on said aluminum or aluminum alloy film which is being formed; and forming said film while fluidizing said film by a temperature rise of said film and bombardment of said film with said charged particles, and said temperature of said film is less than the melting point of said film.
Claim 6
Independent Claim
95 words
A method for forming a planarized aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions, said method comprising the steps of: irradiating charged particles accelerated by a bias voltage having an absolute value greater than 700 volts on said aluminum or aluminum alloy film which is being formed; and forming said film while fluidizing said film by a temperature rise of said film and bombardment of said film with said charged particles, and said temperature of said film is less than the melting point of said film.
Claim 7
Dependent Claim
28 words
A method for forming a planarized film as claimed in claim 4, wherein said substrate is heated from the exterior when said film is formed on said substrate.
Claim 8
Dependent Claim
42 words
A method for forming a planarized film as claimed in claim 5, wherein a temperature of said film in case of the irradiation with said charged particles and the heating from the exterior is less than a melting point of said film.
Claim 9
Independent Claim
97 words
A method for forming a planarized aluminum or aluminum alloy film, comprising: a first step of forming a first aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions; and a second step of forming a second aluminum or aluminum alloy film on said first film while irradiating said second film with charged particles accelerated by a bias voltage having an absolute value greater than 700 volts, a temperature of said second film being less than the melting point of said second film during the formation of said second film.
Claim 10
Independent Claim
97 words
A method for forming a planarized aluminum or aluminum alloy film, comprising: a first step of forming a first aluminum or aluminum alloy film on a substrate having a surface including convex portions and concave portions; and a second step of forming a second aluminum or aluminum alloy film on said first film while irradiating said second film with charged particles accelerated by a bias voltage having an absolute value greater than 700 volts, a temperature of said second film being less than the melting point of said second film during the formation of said second film.
Claim 11
Dependent Claim
36 words
A method for forming a planarized film as claimed in claim 7, wherein a thickness of said first film deposited in said first step is such that said first film is deposited as a continuous film.
Claim 12
Dependent Claim
43 words
A method for forming a planarized film as claimed in claim 7, wherein said second film is formed while said second film is fluidized by a temperature rise of said second film and by bombardment of said second film with said charged particles.
Claim 13
Dependent Claim
24 words
A method for forming a planarized film as claimed in claim 7, wherein said substrate is heated from the exterior in said second step.
Claim 14
Dependent Claim
44 words
A method for forming a planarized film as claimed in claim 10, wherein a temperature of said second film in cases of the irradiation with said charged particles and the heating from the exterior is less than a melting point of said second film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-27 | 1992-09-26 | 1993-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-27 | 1996-09-26 | 1997-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-27 | 2000-09-26 | 2001-03-28 | $7700.00 | Window Closed / Lapsed |