US3983022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for planarizing a surface
Assignee: International Business Machines Corp
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Filing: 1974-10-07
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Granted: 1976-09-28
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Expires: 1994-10-07
Abstract
Abstract A passivating film, such as silicon dioxide, which has been sputter deposited over a metal stripe in a thin film device is planarized by a resputtering. Since the contour of the sputter-deposited film follows the contour of the metal stripe, the planarization is achieved by adjusting the resputtering to produce a substantially zero deposition rate on the flat surfaces of the film while sputter etching takes place on the slope surfaces of the film. This process is carried on until the surface of the film is planar. In the situation where the metal stripe is relatively wide whereby the sputter planarization of the passivating film would take an undesirably long time, a relatively large portion of the film over the stripe within its perimeter is first chemically etched to a desired depth on the film utilizing a photoresist or other suitable technique and, thereafter, the remaining portions of the film are removed by the sputter etching of their slopes until planarization is achieved.
Inventors
- 👤 Raymond P. Auyang
- 👤 Harold R. Koenig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P95/00; H10P95/06; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
106 words
A method of providing a planar surface on an insulating film of a thin film device, wherein said insulating film overlies a metal stripe which is on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said insulating film between said first and second surfaces being sloped, comprising: sputter etching said sloped portions while not affecting said metal stripe until the total surface of said insulating film substantially lies in said second plane.
Claim 2
Independent Claim
106 words
A method of providing a planar surface on an insulating film of a thin film device, wherein said insulating film overlies a metal stripe which is on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said insulating film between said first and second surfaces being sloped, comprising: sputter etching said sloped portions while not affecting said metal stripe until the total surface of said insulating film substantially lies in said second plane.
Claim 3
Independent Claim
131 words
A method of providing a planar surface on an insulating film of a thin film device, wherein said insulating film is being sputter deposited on a metal stripe lying on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said film between said first and said second surfaces being sloped, comprising: resputtering said insulating film while not affecting said metal stripe, said resputtering being adjusted to produce substantially zero deposition on said flat surfaces whereby said sloped surfaces are sputter etched, said resputtering being carried on until the surface of said insulating film lies in said second plane.
Claim 4
Independent Claim
131 words
A method of providing a planar surface on an insulating film of a thin film device, wherein said insulating film is being sputter deposited on a metal stripe lying on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said film between said first and said second surfaces being sloped, comprising: resputtering said insulating film while not affecting said metal stripe, said resputtering being adjusted to produce substantially zero deposition on said flat surfaces whereby said sloped surfaces are sputter etched, said resputtering being carried on until the surface of said insulating film lies in said second plane.
Claim 5
Independent Claim
143 words
A method of providing a planar surface on the insulating film of a thin film device, wherein said insulating film has been sputter deposited on a metal stripe lying on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said film between said first and said second surfaces being sloped, comprising: chemically etching a part of said portion of said film over said stripe and within said sloped surfaces to a depth substantially co-planar with said second plane while not affecting said metal stripe; and sputter etching said sloped surfaces until the total surface of said insulating film substantially lies in said second plane while not affecting said metal stripe.
Claim 6
Independent Claim
143 words
A method of providing a planar surface on the insulating film of a thin film device, wherein said insulating film has been sputter deposited on a metal stripe lying on a substrate, the portion of said film over said stripe forming an upper first substantially flat surface in a first plane, the portion of said film on said substrate forming lower second substantially flat surfaces in a second plane, the portions of said film between said first and said second surfaces being sloped, comprising: chemically etching a part of said portion of said film over said stripe and within said sloped surfaces to a depth substantially co-planar with said second plane while not affecting said metal stripe; and sputter etching said sloped surfaces until the total surface of said insulating film substantially lies in said second plane while not affecting said metal stripe.
References Cited (Backward Citations)
US2955998A
Cited
US3287612A
Cited
US3479269A
Cited
US3684678A
Cited
US3661761A
Cited
US3661747A
Cited
US3676317A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-28 | 1980-03-29 | 1980-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-28 | 1984-03-29 | 1984-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-28 | 1988-03-29 | 1988-09-28 | $7700.00 | Window Closed / Lapsed |