Bipolar microwave integratable transistor

Claim 2

A semiconductor device having at least first and second transistors comprising: a semiconductor substrate with a monocrystalline layer formed thereupon; a first transistor region of the first transistor and a second transistor region of the second transistor disposed within portions of the monocrystalline layer; a first base region formed of monocrystalline semiconductor disposed substantially above the first transistor region; a second base region formed of monocrystalline semiconductor disposed substantially above the second transistor region and extending laterally substantially beyond the second transistor region forming an overhanging portion; third and fourth transistor regions disposed substantially above the first and second base regions, respectively; the first transistor region of the first transistor and the second base region of the second transistor being electrically coupled by way of the substrate, the monocrystalline layer, and the overhanging portion.

Claim 3

The semiconductor device of claim 1 in which the first and second transistor regions are formed of opposite conductivity type semiconductor material.

Claim 4

The semiconductor device of claim 1 in which the first and second base regions are substantially laterally surrounded by polycrystalline material.

Claim 5

The semiconductor device of claim 3 in which the third and fourth transistor regions are substantially laterally surrounded by polycrystalline material.

Claim 6

The semiconductor device of claim 1 in which the first and fourth transistor regions are emitters.

Claim 7

A semiconductor device having emitter, base and collector regions comprising: a doped semiconductor substrate; a continuous epitaxial first monocrystalline layer formed on said substrate; an emitter region within the first monocrystalline layer; a first oxide layer above the first monocrystalline layer, said first oxide layer having a hole, smaller than the emitter region, above the emitter region; a first semiconductive layer above the first oxide layer, said first semiconductive layer having polycrystalline and monocrystalline base regions, said monocrystalline base region completely filling the hole in the first oxide layer and extending beyond the periphery of the hole; a second oxide layer disposed above the first semiconductor layer, said second oxide layer having a hole, smaller than the monocrystalline base region, located above the base region; and a second semiconductive layer above the second oxide layer, said second semiconductive layer having polycrystalline and monocrystalline collector regions, said monocrystalline collector region completely filling the hole in the second oxide layer, thereby forming a first transistor.

Claim 8

A semiconductor device having emitter, base and collector regions comprising: a doped semiconductor substrate; a continuous epitaxial first monocrystalline layer formed on said substrate; an emitter region within the first monocrystalline layer; a first oxide layer above the first monocrystalline layer, said first oxide layer having a hole, smaller than the emitter region, above the emitter region; a first semiconductive layer above the first oxide layer, said first semiconductive layer having polycrystalline and monocrystalline base regions, said monocrystalline base region completely filling the hole in the first oxide layer and extending beyond the periphery of the hole; a second oxide layer disposed above the first semiconductor layer, said second oxide layer having a hole, smaller than the monocrystalline base region, located above the base region; and a second semiconductive layer above the second oxide layer, said second semiconductive layer having polycrystalline and monocrystalline collector regions, said monocrystalline collector region completely filling the hole in the second oxide layer, thereby forming a first transistor.

Claim 9

A semiconductor device comprising a plurality of devices of claim 6 in which the emitters are electrically coupled by the substrate.

Claim 10

The semiconductor device of claim 7 further comprising: a collector region disposed within a second portion of the first monocrystalline layer; a base region disposed above the collector region; a emitter region disposed over the base region thereby forming a second transistor wherein the emitter of the first transistor is electrically coupled to the collector of the second transistor by the semiconductor substrate.