US4255674A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a multiple-emitter transistor
Assignee: US Philips Corp
•
Filing: 1979-01-02
•
Granted: 1981-03-10
•
Expires: 1999-01-02
Abstract
Abstract A semiconductor device includes a bipolar transistor having at least two emitter zones. One of the emitter zones is divided into two separate sub-zones, which are separated by a conductive channel which connects the base zone to an adjoining resistive zone. Two substantially identical transistors of the type disclosed may be interconnected in a cross-coupled arrangement to form an ECL memory cell.
Inventors
- 👤 Didier J. R. Grenier
- 👤 Jean M. H. Seguin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:29
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4116; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
260 words
A semiconductor device having a semiconductor body comprising a surface-adjoining island-shaped region in which a transistor is provided having a collector region of a first conductivity type, a base region of a second conductivity type opposite to that of the first and at least two emitter regions of the first conductivity type in which, viewed on the surface, the base is situated above the collector region, the emitter regions are situated above the base region, and the base region is connected to a resistor formed by a resistive zone of the second conductivity type which is provided in the island-shaped region, adjoins the base region and has two connections, a first of which comprises a base contact, characterized in that the side walls of the island-shaped region are bounded by a dielectric and that a first emitter region is situated between the base contact and the second connection of the resistive zone and the second emitter region is situated on the side of the base contact remote from the second connection, that the base region, at least at the area of the first emitter region, and the first emitter region both extend transvrsely over the width of the island-shaped region and adjoin the dielectric, and that the first emitter region includes an aperture which contains a conductive channel portion of the base region for carrying the current between the base contact and the second connection of the resistive zone, which channel divides the first emitter region into at least two separate sub-regions, each adjoining the dielectric on only one side.
Claim 2
Dependent Claim
260 words
A semiconductor device having a semiconductor body comprising a surface-adjoining island-shaped region in which a transistor is provided having a collector region of a first conductivity type, a base region of a second conductivity type opposite to that of the first and at least two emitter regions of the first conductivity type in which, viewed on the surface, the base is situated above the collector region, the emitter regions are situated above the base region, and the base region is connected to a resistor formed by a resistive zone of the second conductivity type which is provided in the island-shaped region, adjoins the base region and has two connections, a first of which comprises a base contact, characterized in that the side walls of the island-shaped region are bounded by a dielectric and that a first emitter region is situated between the base contact and the second connection of the resistive zone and the second emitter region is situated on the side of the base contact remote from the second connection, that the base region, at least at the area of the first emitter region, and the first emitter region both extend transvrsely over the width of the island-shaped region and adjoin the dielectric, and that the first emitter region includes an aperture which contains a conductive channel portion of the base region for carrying the current between the base contact and the second connection of the resistive zone, which channel divides the first emitter region into at least two separate sub-regions, each adjoining the dielectric on only one side.
Claim 3
Dependent Claim
21 words
A semiconductor device as claimed in claim 1, characterized in that said first emitter region is divided into only two sub-regions.
Claim 4
Dependent Claim
38 words
A semiconductor device as claimed in claim 1 or 2, characterized in that the two sub-regions are substantially equally sized and positioned substantially symmetrically with respect to the center line between the two connections of the resistive zone.
Claim 5
Dependent Claim
41 words
A semiconductor device as claimed in claim 1, characterized in that the second emitter region and the base region at the area of the second emitter region also extend transversely over the width of the island-shaped region and adjoin the dielectric.
Claim 6
Dependent Claim
30 words
A semiconductor device as claimed in claim 4, characterized in that the second emitter region is formed by a coherent zone extending over the whole width of the island-shaped region.
Claim 7
Dependent Claim
36 words
A semiconductor device as claimed in claim 1, characterized in that said dielectric is formed by a pattern of silicon oxide which is sunk in the semiconductor body over at least a part of its thickness.
Claim 8
Dependent Claim
128 words
A semiconductor device as claimed in claim 1, characterized in that said transistor and said resistive zone, hereinafter termed first transistor and first resistive zone, respectively, form part of a memory cell which further comprises a second transistor and a second resistive zone substantially identical to the first transistor and resistive zone, respectively, provided in a second island-shaped region of the semiconductor body beside the first-mentioned island-shaped region, the base and collector regions of the first and second transistors being connected together in cross-coupled fashion, said second connections of the resistive zones being connected together and to a first supply line, a first of the emitter regions of each transistor being connected to a second supply line, and the second emitter regions thereof being connected to read/write lines.
Claim 9
Dependent Claim
25 words
A semiconductor device as claimed in claim 7, characterized in that the emitter regions divided into separate sub-regions are connected to the second supply line.
Claim 10
Dependent Claim
155 words
A semiconductor device having a semiconductor body comprising a surface-adjoining island-shaped region in which a transistor is formed having a collector region and an emitter region of the first conductivity type and an intermediate base region of a second conductivity type opposite to that of the first, in which, viewed on the surface, the emitter region is situated above the base region and the base region is situated above the collector region, and the base region and the emitter region each adjoin, on at least on two oppositely located sides, a pattern of insulating material which is sunk in the semiconductor body at least over a part of its thickness, characterized in that the emitter region, viewedalong its center line between the two said oppositely located sides, is divided into two separate sub-regions each adjoining the pattern of insulating material only on one side, said two separate sub-regions being provided with a common emitter contact.
Claim 11
Dependent Claim
155 words
A semiconductor device having a semiconductor body comprising a surface-adjoining island-shaped region in which a transistor is formed having a collector region and an emitter region of the first conductivity type and an intermediate base region of a second conductivity type opposite to that of the first, in which, viewed on the surface, the emitter region is situated above the base region and the base region is situated above the collector region, and the base region and the emitter region each adjoin, on at least on two oppositely located sides, a pattern of insulating material which is sunk in the semiconductor body at least over a part of its thickness, characterized in that the emitter region, viewedalong its center line between the two said oppositely located sides, is divided into two separate sub-regions each adjoining the pattern of insulating material only on one side, said two separate sub-regions being provided with a common emitter contact.
References Cited (Backward Citations)
US3648125A
Cited
US3936813A
Cited
US4011580A
Cited
US3979612A
Cited
US4035784A
Cited
US4118728A
Cited
US4149177A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-09 | 1988-09-08 | 1989-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-09 | 1992-09-08 | 1993-03-10 | $7700.00 | Window Closed / Lapsed |