Temperature-compensated voltage driver circuit for a current source arrangement

Claim 2

A circuit arrangement for supplying a drive voltage to an enhancement mode field effect transistor having a gate electrode and coupled as a current source whose channel is coupled between a first supply voltage terminal and an output terminal, said circuit arrangement comprising: a first depletion mode field effect transistor having a gate electrode and operated in the non-saturated mode, whose channel is coupled between the first supply voltage terminal and a junction point; and a second depletion mode field effect transistor having a gate electrode and operated in the saturated mode, whose channel is coupled between said junction point and a second supply voltage terminal, drive voltage for the current source field effect transistor being supplied from said junction point to the gate of the current source field effect transistor, the gate of the first field effect transistor being connected to said junction point, the gate of the second field effect transistor being connected to the first supply voltage terminal, and the channel width/channel length ratios k 1 and k 2 of the first and second field effect transistors respectively and threshold voltages V TD thereof being chosen to be such that, at the desired current supplied by the current source, the temperature-dependent variation of the gate-source voltage of the first transistor, at least within a selected temperature range, substantially corresponds to the temperature-dependent variation required of the source-gate voltage of the current source field effect transistor for the output current thereof to be maintained substantially constant.

Claim 3

A circuit arrangement as claimed in claim 1, characterized in that the channel width/channel length ratios k 1 and k 2 of the first and second transistors respectively and the threshold voltages V TD thereof as well as the threshold voltage V TE of the current source field effect transistor are chosen to be such that at a given reference temperature T 0 the following equation is at least substantially satisfied: ##EQU15##

Claim 4

A circuit arrangement as claimed in claim 1 or 2, characterized in that the channel width/channel length ratio of the second field effect transistor relative to the channel width/channel length ratio of the first field effect transistor is chosen to be relatively large.

Claim 5

A circuit arrangement as claimed in claim 1 or 2, further comprising a fourth depletion mode field effect transistor having a channel and a gate, characterized in that the channel of said fourth depletion mode field effect transistor, operated in the saturated mode, is coupled between the second supply voltage terminal and the channel of the second transistor, the gate of said fourth field effect transistor being connected to said junction point.

Claim 6

An arrangement for supplying a plurality of constant currents to a corresponding number of loads, comprising a corresponding number of enhancement mode field effect transistors coupled as current source whose channels are each connected between the first supply voltage terminal and one of a corresponding number of output terminals, said arrangement comprising a single circuit as claimed in claim 1 or 2 for supplying a drive voltage to each current source field effect transistor.

Claim 7

A circuit arrangement for supplying a constant current to a load, comprising an enhancement mode field effect transistor having a gate electrode and coupled as a current source whose channel is coupled between a first supply voltage terminal and an output terminal, and a circuit arrangement for supplying a drive voltage to said current source field effect transistor, said circuit arrangement comprising: a first depletion mode field effect transistor having a gate electrode and operated in the non-saturated mode whose channel is coupled between the first supply voltage terminal and a junction point; and a second depletion mode field effect transistor having a gate electrode and operated in the saturated mode whose channel is coupled between said junction point and a second supply voltage terminal, drive voltage for the current source field effect transistor being supplied from said junction to the gate of the current source field effect transistor, characterized in that the gate of the first field effect transistor is connected to said junction point, in that the gate of the second field effect transistor is connected to the first supply voltage terminal, and in that channel width/channel length ratios k 1 and k 2 and of the first and second field effect transistors respectively and threshold voltages V TD thereof are chosen to be such that, at the desired current supplied by the current source, the temperature-dependent variation of the gate-source voltage of the first transistor, at least within a selected temperature range, substantially corresponds to the temperature-dependent variation required of the source-gate voltage of the current source field effect transistor for the output current thereof to be maintained substantially constant.

Claim 8

A circuit arrangement for supplying a constant current to a load, comprising an enhancement mode field effect transistor having a gate electrode and coupled as a current source whose channel is coupled between a first supply voltage terminal and an output terminal, and a circuit arrangement for supplying a drive voltage to said current source field effect transistor, said circuit arrangement comprising: a first depletion mode field effect transistor having a gate electrode and operated in the non-saturated mode whose channel is coupled between the first supply voltage terminal and a junction point; and a second depletion mode field effect transistor having a gate electrode and operated in the saturated mode whose channel is coupled between said junction point and a second supply voltage terminal, drive voltage for the current source field effect transistor being supplied from said junction to the gate of the current source field effect transistor, characterized in that the gate of the first field effect transistor is connected to said junction point, in that the gate of the second field effect transistor is connected to the first supply voltage terminal, and in that channel width/channel length ratios k 1 and k 2 and of the first and second field effect transistors respectively and threshold voltages V TD thereof are chosen to be such that, at the desired current supplied by the current source, the temperature-dependent variation of the gate-source voltage of the first transistor, at least within a selected temperature range, substantially corresponds to the temperature-dependent variation required of the source-gate voltage of the current source field effect transistor for the output current thereof to be maintained substantially constant.

Claim 9

A circuit arrangement as claimed in claim 5, characterized in that the channel width/channel length ratios k 1 and k 2 of the first and second transistors, respectively, and the threshold voltages V TD thereof, as well as the threshold voltage V TE of the current source field effect transistor are chosen to be such that at a given reference temperature T 0 the following equation is at least substantially satisfied: ##EQU16##

Claim 10

A circuit arrangement as claimed in claim 5 or 6, characterized in that the channel width/channel length ratio of the second field effect transistor relative to the channel width/channel length ratio of the first field effect transistor is chosen to be relatively large.

Claim 11

A circuit arrangement as claimed in claim 5 or 7, further comprising a fourth depletion mode field effect transistor having a channel and a gate, characterized in that the channel of said fourth depletion mode field effect transistor operated in the saturated mode is coupled between the second supply voltage terminal and the channel of the second transistor, the gate of said fourth field effect transistor being connected to said junction point.