US4760288A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature compensation for semiconductor logic gates
Assignee: Honeywell Inc
•
Filing: 1986-07-21
•
Granted: 1988-07-26
•
Expires: 2006-07-21
Abstract
Abstract A temperature compensation system for semiconductor digital or analog circuits where the temperature compensation is accomplished by two depletion mode MESFETs. A first MESFET is adapted to operate as a level shifter in the linear region of operation only in combination with a second MESFET adapted to operate in the saturation region of operation.
Inventors
- 👤 Andrzej Peczalski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:12
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00369; H03K19/00384; H03K19/02; H03K19/08; H03K19/094; H03K19/0952
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
241 words
A temperature compensated electrical circuit comprising depletion mode MESFETS, said circuit being constructed at least in part in a body of semiconductor materials, said circuit having temperature compensation means, said temperature compensation means comprising: a first depletion mode MESFET means having first and second terminal regions in said semiconductor body and a gate terminal region comprising a metallic electrical conductor means on a surface of said semiconductor body, wherein said first depletion mode MESFET means' first terminal region is operated at a higher voltage than said first depletion mode MESFET means' second terminal region, said first depletion mode MESFET means' gate terminal region is electrically connected to said first depletion mode MESFET means' first terminal region, and said first depletion mode MESFET means is operated at current levels within its linear region of operation; and second depletion mode MESFET means having first and second terminal regions in said semiconductor body and a gate terminal region, wherein said second depletion mode MESFET means' first terminal region is operated at a higher voltage than said second depletion mode MESFET means' second terminal region, said second depletion mode MESFET means' gate terminal region is electrically connected to said second MESFET means' second terminal region, said second depletion mode MESFET means' first terminal region is electrically connected to said first depletion mode MESFET means' second terminal region, and said second depletion mode MESFET means is operated at current levels in its saturation mode of operation.
Claim 2
Dependent Claim
241 words
A temperature compensated electrical circuit comprising depletion mode MESFETS, said circuit being constructed at least in part in a body of semiconductor materials, said circuit having temperature compensation means, said temperature compensation means comprising: a first depletion mode MESFET means having first and second terminal regions in said semiconductor body and a gate terminal region comprising a metallic electrical conductor means on a surface of said semiconductor body, wherein said first depletion mode MESFET means' first terminal region is operated at a higher voltage than said first depletion mode MESFET means' second terminal region, said first depletion mode MESFET means' gate terminal region is electrically connected to said first depletion mode MESFET means' first terminal region, and said first depletion mode MESFET means is operated at current levels within its linear region of operation; and second depletion mode MESFET means having first and second terminal regions in said semiconductor body and a gate terminal region, wherein said second depletion mode MESFET means' first terminal region is operated at a higher voltage than said second depletion mode MESFET means' second terminal region, said second depletion mode MESFET means' gate terminal region is electrically connected to said second MESFET means' second terminal region, said second depletion mode MESFET means' first terminal region is electrically connected to said first depletion mode MESFET means' second terminal region, and said second depletion mode MESFET means is operated at current levels in its saturation mode of operation.
Claim 3
Dependent Claim
12 words
The apparatus of claim 1 wherein said semiconductor body comprises gallium arsenide.
Claim 4
Dependent Claim
21 words
The apparatus of claim 1 wherein said circuit comprises a logic gate of the type known as Schottky diode FET logic.
Claim 5
Dependent Claim
12 words
The apparatus of claim 3 wherein said semiconductor body comprises gallium arsenide.
Claim 6
Dependent Claim
20 words
The apparatus of claim 1 wherein said circuit comprises a logic gate of the type known as buffered FET logic.
Claim 7
Dependent Claim
12 words
The apparatus of claim 5 wherein said semiconductor body comprises gallium arsenide.
Claim 8
Dependent Claim
87 words
The apparatus of claim 1 wherein the voltage drop across said first depletion mode MESFET means is expressed by the quadratic equation: ##EQU2## where V D is the voltage drop, V T is the threshold voltage of said first depletion mode MESFET, I d is the current of second depletion mode MESFET in saturation and I dss is the current of said first depletion mode MESFET in saturation at V GS =0 and where temperature is in the range of about +24° C. to about +140° C.
Claim 9
Dependent Claim
12 words
The apparatus of claim 7 wherein said semiconductor body comprises gallium arsenide.
Claim 10
Dependent Claim
75 words
A temperature compensation arrangement comprising first and second depletion mode MESFET means, wherein said first and second depletion mode MESFET means is operated at current levels within their linear region of operation, said first depletion mode MESFET means further having its drain electrically connected to its gate and its source electrically connected to the drain of said second depletion mode MESFET means, said second depletion mode MESFET having its gate electrically connected to its source.
Claim 11
Dependent Claim
75 words
A temperature compensation arrangement comprising first and second depletion mode MESFET means, wherein said first and second depletion mode MESFET means is operated at current levels within their linear region of operation, said first depletion mode MESFET means further having its drain electrically connected to its gate and its source electrically connected to the drain of said second depletion mode MESFET means, said second depletion mode MESFET having its gate electrically connected to its source.
Claim 12
Dependent Claim
12 words
The apparatus of claim 9 wherein said semiconductor body comprises gallium arsenide.
Claim 13
Dependent Claim
19 words
The apparatus of claim 10 adapted to a logic gate of the type known as Schottky diode FET logic.
Claim 14
Dependent Claim
12 words
The apparatus of claim 11 wherein said semiconductor body comprises gallium arsenide.
Claim 15
Dependent Claim
22 words
The apparatus of claim 9 wherein said apparatus is adapted to a logic gate of the type known as buffered FET logic.
Claim 16
Dependent Claim
12 words
The apparatus of claim 13 wherein said semiconductor body comprises gallium arsenide.
Claim 17
Dependent Claim
88 words
The apparatus of claim 9 wherein the voltage drop across said first depletion mode MESFET means is expressed by the quadratic equation: ##EQU3## where V D is the voltage drop, V T is the threshold voltage of said first depletion mode MESFET, I d is the current of said second depletion mode MESFET in saturation and I dss is the current of said first depletion mode MESFET in saturation at V GS =0 and where temperature is in the range of about +24° C. to about +140° C.
Claim 18
Dependent Claim
12 words
The apparatus of claim 15 wherein said semiconductor body comprises gallium arsenide.
Claim 19
Dependent Claim
120 words
A temperature compensation circuit comprising first and second depletion mode MESFET means which operate at current levels within their linear and saturation region of operation respectively, said first depletion mode MESFET means having a gate, said first depletion mode MESFET means gate having a width of about 10 micrometers and a length of about 1 micrometer, said first depletion mode MESFET means gate being electrically connected to the drain of said first depletion mode MESFET means; said second depletion mode MESFET means having a gate, said second depletion mode MESFET means gate being electrically connected to the drain of said second depletion mode MESFET means; and the source of both first and second depletion mode MESFET means being electrically connected.
Claim 20
Dependent Claim
120 words
A temperature compensation circuit comprising first and second depletion mode MESFET means which operate at current levels within their linear and saturation region of operation respectively, said first depletion mode MESFET means having a gate, said first depletion mode MESFET means gate having a width of about 10 micrometers and a length of about 1 micrometer, said first depletion mode MESFET means gate being electrically connected to the drain of said first depletion mode MESFET means; said second depletion mode MESFET means having a gate, said second depletion mode MESFET means gate being electrically connected to the drain of said second depletion mode MESFET means; and the source of both first and second depletion mode MESFET means being electrically connected.
Claim 21
Dependent Claim
92 words
The apparatus of claim 17 wherein the voltage drop across said first depletion mode MESFET means is expressed by the quadratic equation: ##EQU4## where V D is the voltage drop, V T is the threshold voltage of said first depletion mode MESFET, I d is the current of said second depletion mode MESFET in saturation at V GS =0, and I dss is the current of said first depletion mode MESFET in saturation at V GS =0 and where temperature is in the range of about +24° C. to about +140° C.
Claim 22
Dependent Claim
12 words
The apparatus of claim 18 wherein said semiconductor body comprises gallium arsenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-26 | 1992-01-25 | 1992-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-26 | 1996-01-25 | 1996-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-26 | 2000-01-25 | 2000-07-26 | $7700.00 | Window Closed / Lapsed |