Method of producing isolation groove structure

Claim 1

A method for producing an isolation groove structure comprising the steps of: providing a semiconductor substrate comprising a substrate base having a first type of conductivity, a buried layer formed on said substrate base and having a second type of conductivity that is opposite to that of said first type of conductivity and an epitaxial layer formed on said buried layer and having said second type of conductivity and an impurity concentration that is lower than that of said buried layer; forming in said semiconductor substrate by reactive ion etching, a first groove portion having a generally U-shaped cross section and wide walls which are substantially straight and parallel to each other; simultaneously forming in said semiconductor substrate by anisotropic etching, second and third groove portions having generally V-shaped cross sections, said second groove portion being formed at the bottom of said first groove portion, thereby presenting a deep isolation groove extending to said substrate base, said third groove portion being formed at a location different from that of said first groove portion and presenting a shallow isolation groove not reaching said substrate base; and oxidizing said deep isolation groove and said shallow isolation groove, so that elements on said semiconductor substrate are isolated thereby.

Claim 2

A method for producing an isolation groove structure comprising the steps of: providing a semiconductor substrate comprising a substrate base having a first type of conductivity, a buried layer formed on said substrate base and having a second type of conductivity that is opposite to that of said first type of conductivity and an epitaxial layer formed on said buried layer and having said second type of conductivity and an impurity concentration that is lower than that of said buried layer; forming in said semiconductor substrate by reactive ion etching, a first groove portion having a generally U-shaped cross section and wide walls which are substantially straight and parallel to each other; simultaneously forming in said semiconductor substrate by anisotropic etching, second and third groove portions having generally V-shaped cross sections, said second groove portion being formed at the bottom of said first groove portion, thereby presenting a deep isolation groove extending to said substrate base, said third groove portion being formed at a location different from that of said first groove portion and presenting a shallow isolation groove not reaching said substrate base; and oxidizing said deep isolation groove and said shallow isolation groove, so that elements on said semiconductor substrate are isolated thereby.