Manufacture of bipolar ic device

Abstract

Abstract PURPOSE:To make a batch processing applicable to forming one side groove simplifying the process by a method wherein a deep groove in the isolated region between elements is formed by dry etching while a shallow groove in the isolated region of collector.contact is formed by wet.etching. CONSTITUTION:A shallow groove 820 is formed by wet etching utilizing an Si3M4 film and an SiO2 film 11 provided with an opening as a mask. Then these two films are selectively oxidized utilizing Si3N4 film 12 as a mask forming another SiO2 film 13 thicker than the film 11 on the exposed surface of the shallow groove 820 with V type section. Later an isolated region 1 between elements is provided with an opening by patterning the Si3 N4 film 12 and SiO2 film 11. Next deep grooves 81 are formed by dry etching successively forming the other SiO2 film 14 on the inner surface of the exposed deep grooves 81. After removing the Si3N4 film 14 utilized as a mask, a buried material 9 as an insulator is buried in each type grooves 81, 820 finishing the isolation process.

Inventors

• 👤 Akihisa Uchida
• 👤 明久 内田
• 👤 Nobuhiko Ono
• 👤 大野　信彦
• 👤 Katsumi Ogiue
• 👤 荻上　勝己
• 👤 Toshihiko Takakura
• 👤 俊彦 高倉
• 👤 Takashi Ishikawa
• 👤 孝 石川

Bibliographic Details