Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
125 words
A method for developing an image-wise exposed quinone diazide positive-working photoresist without forming irregular deposits on the edges of unexposed portions of said photoresist, comprising the steps of: A. providing said exposed photoresist; B. providing a developer composition consisting essentially of an aqueous solution of a tetraalkylammonium hydroxide present in an amount effective to enable said composition to develop said photoresist; and an alkanolamine having the following structure: ##STR3## wherein n is zero or one, each R is independently selected from hydrogen, methyl, or ethyl, and the weight ratio of said primary alkali to said alkanolamine is less than about 1:9; C. developing said photoresist with said developer until the exposed portions of said photoresist are cleared; and D. rinsing said developer from said photoresist.
Claim 2
Independent Claim
125 words
A method for developing an image-wise exposed quinone diazide positive-working photoresist without forming irregular deposits on the edges of unexposed portions of said photoresist, comprising the steps of: A. providing said exposed photoresist; B. providing a developer composition consisting essentially of an aqueous solution of a tetraalkylammonium hydroxide present in an amount effective to enable said composition to develop said photoresist; and an alkanolamine having the following structure: ##STR3## wherein n is zero or one, each R is independently selected from hydrogen, methyl, or ethyl, and the weight ratio of said primary alkali to said alkanolamine is less than about 1:9; C. developing said photoresist with said developer until the exposed portions of said photoresist are cleared; and D. rinsing said developer from said photoresist.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein said step C is immersion development.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein said step C is spray development.
Claim 5
Dependent Claim
10 words
The method of claim 1, wherein said alkanolamine is 1-amino-3-hydroxypropane.
Claim 6
Independent Claim
125 words
A method for developing an image-wise exposed quinone diazide positive-working photoresist in a manner providing a C p value of at least about 1.33, comprising the steps of: A. providing said exposed photoresist; B. providing a developer composition consisting essentially of an aqueous solution of a tetraalkylammonium hydroxide present in an amount effective to enable said composition to develop said photoresist; and an alkanolamine having the following structure: ##STR4## wherein n is zero or one, each R is independently selected from hydrogen, methyl, or ethyl, and the weight ratio of said primary alkali to said alkanolamine is less than about 1:9; C. developing said photoresist with said developer until the exposed portions of said photoresist are cleared; and D. rinsing said developer from said photoresist.
Claim 7
Independent Claim
125 words
A method for developing an image-wise exposed quinone diazide positive-working photoresist in a manner providing a C p value of at least about 1.33, comprising the steps of: A. providing said exposed photoresist; B. providing a developer composition consisting essentially of an aqueous solution of a tetraalkylammonium hydroxide present in an amount effective to enable said composition to develop said photoresist; and an alkanolamine having the following structure: ##STR4## wherein n is zero or one, each R is independently selected from hydrogen, methyl, or ethyl, and the weight ratio of said primary alkali to said alkanolamine is less than about 1:9; C. developing said photoresist with said developer until the exposed portions of said photoresist are cleared; and D. rinsing said developer from said photoresist.
Claim 8
Dependent Claim
94 words
The method of claim 5, wherein said C p value is at least about 1.33 when said exposed photoresist thickness is 1.3 microns plus or minus 0.1 microns; the exposure energy used to expose said photoresist is from 220 to 260 millijoules per square centimeter; the soft bake temperature for said photoresist is from 115° C. to 120° C.; the temperature of said developer is 15° C., plus or minus 1° C.; and the tool used to expose said photoresist is focused on the upper surface of said photoresist, plus or minus 1 micron.