Development of light-sensitive quinone diazide compositions using sulfite stabilizer

Claim 3

The method as claimed in claim 1 wherein said quaternary alkanol ammonium hydroxide developing agent has the formula: ##STR13## wherein R 1 is a hydroxyalkyl radical and each of R 2 , R 3 and R 4 is independently selected from the group consisting of hydrocarbyl radicals and hydroxyalkyl radicals.

Claim 4

The method as claimed in claim 1 wherein said quaternary alkanol ammonium hydroxide developing agent has the formula: ##STR14## wherein R 1 is a hydroxyalkyl radical of 2 to 8 carbon atoms, R 2 is a hydrocarbyl radical of 1 to 10 carbon atoms, R 3 is a hydroxyalkyl radical of 2 to 8 carbon atoms or a hydrocarbyl radical of 1 to 10 carbon atoms, and R 4 is a hydroxyalkyl radical of 2 to 8 carbon atoms or a hydrocarbyl radical of 1 to 10 carbon atoms.

Claim 5

The method as claimed in claim 1 wherein said quaternary alkanol ammonium hydroxide developing agent is selected from the group consisting of: tetraalkanolammonium hydroxides, monoalkyltrialkanolammonium hydroxides, dialkyldialkanolammonium hydroxides, trialkylmonoalkanolammonium hydroxides, monoalkylmonoaryldialkanolammonium hydroxides, dialkylmonoarylmonoalkanolammonium hydroxides, and monoarytrialkanolammonium hydroxides.

Claim 6

The method as claimed in claim 1 wherein said sulfite is selected from the group consisting of sodium sulfite, potassium sulfite, lithium sulfite, ammonium sulfite, sodium bisulfite, potassium bisulfite, lithium bisulfite, ammonium bisulfite, sodium metabisulfite, potassium metabisulfite, lithium metabisulfite, and ammonium metabisulfite.

Claim 7

The method as claimed in claim 1 wherein said developing composition consists essentially of an aqueous solution of methyltriethanolammonium hydroxide and ammonium sulfite.

Claim 8

In a process for forming a resist image which comprises developing an imagewise-exposed layer of a light-sensitive quinone diazide composition with an alkaline developing composition to remove exposed areas of said layer, the improvement wherein said alkaline developing composition comprises an aqueous solution containing a quaternary alkanol ammonium hydroxide developing agent, in a sufficient concentration to remove exposed areas of said layer, and a stabilizing concentration of a sulfite.

Claim 9

In a process for forming a resist image which comprises developing an imagewise-exposed layer of a light-sensitive quinone diazide composition with an alkaline developing composition to remove exposed areas of said layer, the improvement wherein said alkaline developing composition comprises an aqueous solution containing a quaternary alkanol ammonium hydroxide developing agent, in a sufficient concentration to remove exposed areas of said layer, and a stabilizing concentration of a sulfite.

Claim 10

The process as claimed in claim 7 wherein said quaternary alkanol ammonium hydroxide developing agent has the formula: ##STR15## wherein R 1 is a hydroxyalkyl radical and each of R 2 , R 3 and R 4 is independently selected from the group consisting of hydrocarbyl radicals and hydroxyalkyl radicals.

Claim 11

The process as claimed in claim 7 wherein said quaternary alkanol ammonium hydroxide developing agent has the formula: ##STR16## wherein R 1 is a hydroxyalkyl radical of 2 to 8 carbon atoms, R 2 is a hydrocarbyl radical of 1 to 10 carbon atoms, R 3 is a hydroxyalkyl radical of 2 to 8 carbon atoms or a hydrocarbyl radical of 1 to 10 carbon atoms, and R 4 is a hydroxyalkyl radical of 2 to 8 carbon atoms or a hydrocarbyl radical of 1 to 10 carbon atoms.

Claim 12

The process as claimed in claim 7 wherein said quaternary alkanol ammonium hydroxide developing agent is selected from the group consisting of: tetraalkanolammonium hydroxides, monoalkyltrialkanolammonium hydroxides, dialkyldialkanolammonium hydroxides, trialkylmonoalkanolammonium hydroxides, monoalkylmonoaryldialkanolammonium hydroxides, dialkylmonoarylmonoalkanolammonium hydroxides, and monoaryltrialkanolammonium hydroxides.

Claim 13

The process as claimed in claim 7 wherein said quaternary alkanol ammonium hydroxide developing agent has the formula: ##STR17## wherein R 1 is a hydroxyalkyl radical of 2 to 4 carbon atoms, R 2 is an alkyl radical of 1 to 4 carbon atoms, R 3 is a hydroxyalkyl radical of 2 to 4 carbon atoms or an alkyl radical of 1 to 4 carbon atoms, and R 4 is a hydroxyalkyl radical of 2 to 4 carbon atoms or an alkyl radical of 1 to 4 carbon atoms.

Claim 14

The process as claimed in claim 7 wherein said developing composition is an aqueous composition that is substantially free of metal ions and comprises: (1) from about 3 to about 25 percent by weight of a quaternary alkanol ammonium hydroxide developing agent of the formula: ##STR18## wherein R 1 is a hydroxyalkyl radical of 2 to 4 carbon atoms, R 2 is an alkyl radical of 1 to 4 carbon atoms, R 3 is a hydroxyalkyl radical of 2 to 4 carbon atoms or an alkyl radical of 1 to 4 carbon atoms, and R 4 is a hydroxyalkyl radical of 2 to 4 carbon atoms or an alkyl radical of 1 to 4 carbon atoms, and (2) from about 0.02 to about 0.2 moles of a sulfite per mole of said developing agent.

Claim 15

The process as claimed in claim 1 wherein said sulfite is selected from the group consisting of sodium sulfite, potassium sulfite, lithium sulfite, ammonium sulfite, sodium bisulfite, potassium bisulfite, lithium bisulfite, ammonium bisulfite, sodium metabisulfite, potassium metabisulfite, lithium metabisulfite, and ammonium metabisulfite.

Claim 16

The process as claimed in claim 1 wherein said developing composition consists essentially of an aqueous solution of methyltriethanolammonium hydroxide and ammonium sulfite.

Claim 17

The process as claimed in claim 1 wherein said quinone diazide composition is comprised of a monomeric quinone diazide incorporated in an alkali-soluble resinous binder.

Claim 18

The process as claimed in claim 1 wherein said quinone diazide composition is comprised of a monomeric quinone diazide that has been reacted with an alkali-soluble resinous material.

Claim 19

The process as claimed in claim 1 wherein said quinone diazide composition comprises a polymeric compound formed from the condensation reaction of a quinone diazide with a phenol-formaldehyde resin.

Claim 20

The process as claimed in claim 1 wherein said quinone diazide composition comprises a polymeric compound formed from the condensation reaction of a naphthoquinone diazide with a phenol-formaldehyde resin.

Claim 21

The process as claimed in claim 1 wherein said quinone diazide has a linkage selected from the group consisting of sulfonyl, carbonyl, carbonyloxy and sulfinyloxy.

Claim 22

The process as claimed in claim 1 wherein said quinone diazide composition comprises a polymeric compound formed from the condensation reaction of 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride with a phenol-formaldehyde resin.

Claim 23

The process as claimed in claim 1 wherein said quinone diazide composition comprises a non-light-sensitive film-forming polymeric binder and a polymeric compound formed from the condensation reaction of a quinone diazide with a phenol-formaldehyde resin.

Claim 24

The process as claimed in claim 1 wherein said layer of light-sensitive quinone diazide composition is a coating on a silicon wafer.

Claim 25

In a process for forming a resist image which comprises developing an imagewise-exposed layer of a light-sensitive quinone diazide composition with an alkaline developing composition to remove exposed areas of said layer, the improvement wherein said alkaline developing composition is an aqueous solution which is substantially free of metal ions, and contains a sufficient concentration of methyltriethanolammonium hydroxide to remove the exposed areas of said layer of light-sensitive quinone diazide composition without substantial removal of the unexposed areas, and a stabilizing concentration of a sulfite.

Claim 26

In a process for forming a resist image which comprises developing an imagewise-exposed layer of a light-sensitive quinone diazide composition with an alkaline developing composition to remove exposed areas of said layer, the improvement wherein said alkaline developing composition is an aqueous solution which is substantially free of metal ions, and contains a sufficient concentration of methyltriethanolammonium hydroxide to remove the exposed areas of said layer of light-sensitive quinone diazide composition without substantial removal of the unexposed areas, and a stabilizing concentration of a sulfite.