Process for forming planar wiring using polysilicon to fill gaps

Claim 1

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) forming a contact hole in the insulating layer; (c) depositing a metal layer over the entire surface of the device and in the contact hole, a portion of the metal layer in the contact hole forming a contact electrode positioned such that a gap is formed between the contact electrode and the sides of the contact hole in the insulating layer; (d) removing the metal layer except for the contact electrode; (e) depositing polycrystalline silicon over the entire surface of the device to form a polycrystalline silicon layer including a wedge-shaped portion in the gap; (f) etching the polycrystalline silicon layer so that a level surface is formed by the insulating layer, wedge-shaped portion and contact electrode; (g) forming a conductor line on the level surface of the contact electrode, the polycrystalline silicon, and the insulating layer; and (h) heating and alloying the polycrystalline silicon with the conductor line and the contact electrode.

Claim 2

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) forming a contact hole in the insulating layer; (c) depositing a metal layer over the entire surface of the device and in the contact hole, a portion of the metal layer in the contact hole forming a contact electrode positioned such that a gap is formed between the contact electrode and the sides of the contact hole in the insulating layer; (d) removing the metal layer except for the contact electrode; (e) depositing polycrystalline silicon over the entire surface of the device to form a polycrystalline silicon layer including a wedge-shaped portion in the gap; (f) etching the polycrystalline silicon layer so that a level surface is formed by the insulating layer, wedge-shaped portion and contact electrode; (g) forming a conductor line on the level surface of the contact electrode, the polycrystalline silicon, and the insulating layer; and (h) heating and alloying the polycrystalline silicon with the conductor line and the contact electrode.

Claim 5

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) selectively etching the insulating layer and forming a contact hole therein; (c) depositing a metal layer on the insulating layer and in the contact hole, a portion of the metal layer in the contact hole forming a contact electrode positioned in such a way that a wedge-shaped gap is formed between the contact electrode and the sides of the contact hole in the insulating layer; (d) depositing polycrystalline silicon over the entire surface of the device to form a polycrystalline silicon layer including a wedge-shaped portion in the wedge-shaped gap; (e) etching the polycrystalline silicon layer and the metal layer to form a level surface of the insulating layer, wedge-shaped portion and contact electrode; (f) forming a conductor line on the level surface of the insulating layer, the wedge-shaped portion and the contact electrode; and (g) alloying the polycrystalline silicon layer with the conductor line and the contact electrode.

Claim 6

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) selectively etching the insulating layer and forming a contact hole therein; (c) depositing a metal layer on the insulating layer and in the contact hole, a portion of the metal layer in the contact hole forming a contact electrode positioned in such a way that a wedge-shaped gap is formed between the contact electrode and the sides of the contact hole in the insulating layer; (d) depositing polycrystalline silicon over the entire surface of the device to form a polycrystalline silicon layer including a wedge-shaped portion in the wedge-shaped gap; (e) etching the polycrystalline silicon layer and the metal layer to form a level surface of the insulating layer, wedge-shaped portion and contact electrode; (f) forming a conductor line on the level surface of the insulating layer, the wedge-shaped portion and the contact electrode; and (g) alloying the polycrystalline silicon layer with the conductor line and the contact electrode.

Claim 7

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) selectively etching the insulating layer and forming a contact hole therein; (c) forming a thin polycrystalline silicon layer on the insulating layer and in the contact hole; (d) depositing a metal over the thin polycrystalline silicon layer, a portion of the metal layer in the contact hole forming a contact electrode positioned in such a way that a wedge-shaped gap is formed between the contact electrode and the thin polycrystalline silicon layer; (e) depositing polycrystalline silicon on the entire surface to form a polycrystalline silicon layer including a wedge-shaped portion in the wedge-shaped gap; (f) etching the polycrystalline silicon layer, the metal layer, and the thin polycrystalline silicon layer to form a level surface of the insulating layer, the wedge-shaped portion and the contact electrode; (g) forming a conductor line on the level surface of the insulating layer, the wedge-shaped portion and the contact electrode; and (h) alloying the polycrystalline silicon layer with the conductor line and the contact electrode.

Claim 8

A method for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming an insulating layer on the semiconductor substrate; (b) selectively etching the insulating layer and forming a contact hole therein; (c) forming a thin polycrystalline silicon layer on the insulating layer and in the contact hole; (d) depositing a metal over the thin polycrystalline silicon layer, a portion of the metal layer in the contact hole forming a contact electrode positioned in such a way that a wedge-shaped gap is formed between the contact electrode and the thin polycrystalline silicon layer; (e) depositing polycrystalline silicon on the entire surface to form a polycrystalline silicon layer including a wedge-shaped portion in the wedge-shaped gap; (f) etching the polycrystalline silicon layer, the metal layer, and the thin polycrystalline silicon layer to form a level surface of the insulating layer, the wedge-shaped portion and the contact electrode; (g) forming a conductor line on the level surface of the insulating layer, the wedge-shaped portion and the contact electrode; and (h) alloying the polycrystalline silicon layer with the conductor line and the contact electrode.