Patent EP0246057A2 successfully refreshed from Google Patents.
JPS522166A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of pulling out wiring from highly inpure dope layer
Assignee: Hitachi Ltd
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Filing: 1975-06-24
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Granted: —
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Expires: 1995-06-24
Abstract
Abstract PURPOSE: To prevent alloying by diffusing highly dense inpurities in silicon layer by forming low dense silicon layer on high impurity dense dope layer. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Tatsumi Shirasu
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-24 20:01
CPC Classifications
—
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