Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the withstand voltage and the reliability of a semiconductor device by superposing the second wiring layer on the first wiring layer while placing a resist mask thereon, exfoliating a mask, superposing the third wiring layer, dry etching it, thereby flattening the surface of the device. CONSTITUTION:An aluminum layer 22 on an Si substrate 21 is patterned by a resist mask 23, and an SiO2 film 24 is covered. When the mask 23 is removed after etching lightly with HF solution, a V-shaped groove 25 is obtained in the vicinity of the stepwise difference. Then, an SiO2 film 26 is covered, is etched by reactive ion etching to expose the surface of the aluminum layer 22. Then, the groove 25 is filled with the film 26 to flatten the surface. Further, an SiO2 film 27 is superposed, and an aluminum layer 29 is deposited. Since the insulating layer 27 and the aluminum layer 29 are formed on the flattened surface, the layer 27 is formed densely in a uniform thickness, a semiconductor device which has high withstand voltage and high reliability can be obtained, the thickness of the conductive layer can become constant, thereby preventing the wirings from being disconnected.

Inventors

• 👤 Tadashi Serikawa
• 👤 正 芹川
• 👤 Satoshi Sekine
• 👤 聡 関根

Bibliographic Details