Patent US4784973A successfully refreshed from Google Patents.
US4784973A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor contact silicide/nitride process with control for silicide thickness
Assignee: Inmos Corp
•
Filing: 1987-08-24
•
Granted: 1988-11-15
•
Expires: 2007-08-24
Abstract
Abstract A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.
Inventors
- 👤 E. Henry Stevens
- 👤 Paul J. McClure
- 👤 Christopher W. Hill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:42
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; Y; Y10; Y10S; Y10S148/00; Y10S148/112; Y10S148/118; Y10S148/147; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
180 words
In the fabrication of an integrated circuit, a process for establishing an electrical contact at a contact opening in an insulative material to an underlying silicon region of said integrated circuit and for forming a metallurgic barrier over said contact comprising the steps of: establishing a relatively thin control region in said contact opening over said underlying silicon region, said control region comprising a compound including silicon oxygen and nitrogen; then establishing a first layer comprising a transition metal over said insulative material and said control region; and then thermally cycling the integrated circuit to convert at least part of said transition metal layer into a metallurgic barrier and to establish a low resistance silicide contact region below said barrier in said underlying silicon region previously exposed by said contact opening, said control region retarding the development of said silicide contact region in said contact opening, said control region being replaced during said thermally cycling step by said silicide region, said control region thereby permitting the thickness of said silicide contact region relative to said metallurgic barrier to be controlled.
Claim 2
Dependent Claim
180 words
In the fabrication of an integrated circuit, a process for establishing an electrical contact at a contact opening in an insulative material to an underlying silicon region of said integrated circuit and for forming a metallurgic barrier over said contact comprising the steps of: establishing a relatively thin control region in said contact opening over said underlying silicon region, said control region comprising a compound including silicon oxygen and nitrogen; then establishing a first layer comprising a transition metal over said insulative material and said control region; and then thermally cycling the integrated circuit to convert at least part of said transition metal layer into a metallurgic barrier and to establish a low resistance silicide contact region below said barrier in said underlying silicon region previously exposed by said contact opening, said control region retarding the development of said silicide contact region in said contact opening, said control region being replaced during said thermally cycling step by said silicide region, said control region thereby permitting the thickness of said silicide contact region relative to said metallurgic barrier to be controlled.
Claim 3
Dependent Claim
50 words
The process of claim 1 wherein said step of establishing a control region comprises surrounding said contact opening with a reactive gas mixture and thermally cycling said integrated circuit to form said control region by reacting a portion of said underlying region with said gas mixture during said thermal cycle.
Claim 4
Dependent Claim
34 words
The process according to claim 1, wherin said thermally cycling step comprises exposing said metal first layer to a nitridating atmosphere and reacting said metal first layer with said atmosphere during said cycling step.
Claim 5
Dependent Claim
22 words
The process according to claim 3, wherein said metal layer comprises titanium and wherein said nitridating atmosphere includes nitrogen or ammonia gas.
Claim 6
Dependent Claim
35 words
The process according to claim 1 wherein said first layer comprises titanium, wherein said thermally cycling step comprises thermally cycling said integrated circuit in an atmosphere containing nitrogen or ammonia thereby to form titanium nitride.
Claim 7
Dependent Claim
46 words
The process according to claim 1 wherein said step of establishing a control region comprises thermally cycling said integrated circuit prior to said step of establishing a first layer of transition metal, by reacting said exposed underlying layer in an atmosphere to form said control region.
Claim 8
Dependent Claim
19 words
The process according to claim 6 wherein said control layer supplies oxygen to grain boundaries in the metallurgic barrier.
Claim 9
Dependent Claim
11 words
The process according to claim 6 wherein said atmosphere includes nitrogen.
Claim 10
Dependent Claim
19 words
The process according to claim 8 wherein said control layer supplies nitrogen to grain boundaries in the metullurgic barrier.
Claim 11
Dependent Claim
90 words
The process of claim 1 wherein said contact opening extends through a dielectric containing silicon to expose said underlying region, said underlying region also containing silicon, wherein said control region is established on the exposed surface of said underlying region within said contact opening, wherein said establishing a first layer of transition metal comprises depositing a layer of titanium over said dielectric and said control region, and wherein said process includes establishing a region adjoining said dielectric, said region comprising a compound or mixture of titanium, nitrogen, silicon, and oxygen.
Claim 12
Dependent Claim
22 words
The process of claim 1 wherein said establishing a control region step comprises establishing a control region in said contact opening only.
References Cited (Backward Citations)
US3825442A
Cited
US4404733A
Cited
US4713357A
Cited
US4545116A
Cited
US4717449A
Cited
JPS61137367A
Cited
US4701349A
Cited
US4657628A
Cited
US4676866A
Cited
US4722910A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |