US4713357A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a capacitor with reduced dielectric breakdown
Assignee: NEC Electronics Corp
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Filing: 1983-11-21
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Granted: 1987-12-15
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Expires: 2003-11-21
Abstract
Abstract In a semiconductor device having a thin insulating film of 300 Å or less in thickness on which a conductive layer is provided, the conductive layer is connected to the semiconductor substrate at a position outside the active regions. With such a structure, negative charges accumulated on the conductive layer during the reactive ion etching or ion implantation process can be easily discharged to the semiconductor substrate to prevent a dielectric breakdown of the thin insulating film. In the embodiment, the thin insulating film is a dielectric film of a MOS storage capacitor of a one-transistor type memory cell and the conductive layer is the upper electrode of the MOS capacitor.
Inventors
- 👤 Toru Imamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:16
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10B; H10B12/00; H10B12/30; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10P30/21; H10P30/212; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of selectively forming a thick field insulating layer on one major surface of a semiconductor substrate of one conductivity type excluding active regions and a predetermined region outside said active regions, forming a thin insulating film of 300 Å or less in thickness on at least a part of said active regions, forming a first conductive film continuously on said thin insulating film, on said field insulating layer, and on said predetermined region of said semiconductor substrate to contact with said semiconductor substrate, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film and discharged through said predetermined region to said semiconductor substrate.
Claim 2
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of selectively forming a thick field insulating layer on one major surface of a semiconductor substrate of one conductivity type excluding active regions and a predetermined region outside said active regions, forming a thin insulating film of 300 Å or less in thickness on at least a part of said active regions, forming a first conductive film continuously on said thin insulating film, on said field insulating layer, and on said predetermined region of said semiconductor substrate to contact with said semiconductor substrate, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film and discharged through said predetermined region to said semiconductor substrate.
Claim 3
Dependent Claim
26 words
A method of manufacturing a semiconductor device of claim 1, in which said first conductive film is made of polycrystalline silicon of the opposite conductivity type.
Claim 4
Dependent Claim
56 words
A method of manufacturing a semiconductor device of claim 1, further comprising the step, before forming said first conductive film, of forming an impurity region of the opposite conductivity type in said predetermined region of said semiconductor substrate of the one conductivity type, said first conductive film being contacted with the surface of said impurity region.
Claim 5
Dependent Claim
39 words
A method of manufacturing a semiconductor device of claim 1, in which said first conductive film is used as an upper electrode of a capacitor, and said thin insulating film is used as a dielectric film of said capacitor.
Claim 6
Dependent Claim
21 words
A method of manufacturing a semiconductor device of claim 1, in which said second conductive film is made of polycrystalline silicon.
Claim 7
Dependent Claim
65 words
A method of manufacturing a semiconductor device of claim 1, further comprising the step of forming an impurity region of the opposite conductivity type in said predetermined region of said semiconductor substrate of the one conductivity type, after forming said first conductive film, by introducing the impurity of the opposite conductivity type into said predetermined region of said semiconductor substrate from said first conductive film.
Claim 8
Independent Claim
194 words
A method of manufacturing a semiconductor memory device having a plurality of memory cells, each of memory cells including a capacitive storage unit, said method comprising the steps of: selectively forming a thick field insulating layer on a surface of a semiconductor substrate except for active regions of said substrate and a contact portion of said substrate outside said active regions, selectively forming a thin insulating film as a dielectric film of said capacitive storage unit on said surface of said substrate in said active regions, forming a conductive film on said thin insulating film as an upper electrode of said capacitive storage unit, and on said thick field insulating layer and connected to said contact portion of said substrate, said first conductive film being continuously formed on a whole part of said field insulating layer positioned between said contact portion and said thin insulating film in the nearest active region to said contact portion, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film are discharged through said contact portion to said semiconductor substrate.
Claim 9
Independent Claim
194 words
A method of manufacturing a semiconductor memory device having a plurality of memory cells, each of memory cells including a capacitive storage unit, said method comprising the steps of: selectively forming a thick field insulating layer on a surface of a semiconductor substrate except for active regions of said substrate and a contact portion of said substrate outside said active regions, selectively forming a thin insulating film as a dielectric film of said capacitive storage unit on said surface of said substrate in said active regions, forming a conductive film on said thin insulating film as an upper electrode of said capacitive storage unit, and on said thick field insulating layer and connected to said contact portion of said substrate, said first conductive film being continuously formed on a whole part of said field insulating layer positioned between said contact portion and said thin insulating film in the nearest active region to said contact portion, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film are discharged through said contact portion to said semiconductor substrate.
Claim 10
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: selectively forming a thick field insulating layer on one major surface of a semiconductor substrate of one conductivity type excluding active regions and a predetermined region outside said active regions, forming a thin insulating film of 300 Å or less in thickness on at least a part of said active regions, forming a continuous first conductive film on said thin insulating film, on said field insulating layer, and on said predetermined region of said semiconductor substrate to contact with said semiconductor substrate, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film and discharged through said predetermined region to said semiconductor substrate.
Claim 11
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: selectively forming a thick field insulating layer on one major surface of a semiconductor substrate of one conductivity type excluding active regions and a predetermined region outside said active regions, forming a thin insulating film of 300 Å or less in thickness on at least a part of said active regions, forming a continuous first conductive film on said thin insulating film, on said field insulating layer, and on said predetermined region of said semiconductor substrate to contact with said semiconductor substrate, forming an insulating layer on said first conductive film, and forming a second conductive film on said insulating layer, whereby electrical charges are accumulated in said first conductive film and discharged through said predetermined region to said semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-14 | 1991-06-15 | 1991-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-14 | 1995-06-15 | 1995-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-14 | 1999-06-15 | 1999-12-15 | $7700.00 | Window Closed / Lapsed |