US4783688A
Expired / Lapsed
US
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Schottky barrier field effect transistors
Assignee: US Philips Corp
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Filing: 1984-07-26
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Granted: 1988-11-08
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Expires: 2004-07-26
Abstract
Abstract A high-grain MESFET (i.e. a Schottky barrier FET) has a gate electrode present directly on a semiconductor body. A highly doped layer, which forms parts of the channel of the transistor, extends below the gate electrode between the source and drain regions respectively. A highly doped surface region of opposite conductivity type to the highly doped layer is present between the gate electrode and the highly doped layer. This surface region, which is so thin that it is fully depleted in the zero gate bias condition, raises the effective height of the Schottky barrier. The highly doped layer is so thin that it can support without breakdown an electric field greater than the critical field for avalanche breakdown of the semiconductor material for this layer. Thus, the doping concentration of the highly doped layer can be increased so that more charge can be depleted from it. The highly doped surface region extends beyond the gate electrode on the drain side of the semiconductor to reduce the surface electric field. Another layer, which is more lightly doped than the highly doped layer of the same conductivity type, increases the mobility of charge carriers in the channel.
Inventors
- 👤 John M. Shannon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D30/00; H10D30/80; H10D30/87
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
281 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductor layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein another layer of said second conductivity type lies between said first layer of said second conductivity type and said semiconductor body portion, said another layer being more lightly doped than said first layer of said second conductivity type, and wherein said another semiconductor layer has a doping concentration of less than 10 15 atoms cm -3 .
Claim 2
Dependent Claim
281 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductor layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein another layer of said second conductivity type lies between said first layer of said second conductivity type and said semiconductor body portion, said another layer being more lightly doped than said first layer of said second conductivity type, and wherein said another semiconductor layer has a doping concentration of less than 10 15 atoms cm -3 .
Claim 3
Dependent Claim
262 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductive layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein said first semiconductor layer is silicon and wherein said first semiconductor layer extending below said gate electrode has a thickness of less than 25 nm and a doping concentration of more than 2×10 18 atoms cm -3 .
Claim 4
Dependent Claim
262 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductive layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein said first semiconductor layer is silicon and wherein said first semiconductor layer extending below said gate electrode has a thickness of less than 25 nm and a doping concentration of more than 2×10 18 atoms cm -3 .
Claim 5
Dependent Claim
263 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductor layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein said first semiconductor layer is gallium arsenide and wherein said first semiconductor layer extending below said gate electrode has a thickness of less than 50 nm and a doping concentration of more than 5×10 17 atoms cm -3 .
Claim 6
Dependent Claim
263 words
A Schottky barrier field effect transistor comprising: a semiconductor body portion of a first conductivity type, a region of a second conductivity type located at a surface of said semiconductor body portion between a source region and a drain region, said region of said second conductivity type including a first semiconductor layer of said second conductivity type in contact with said semiconductor body portion and having a high doping, and a metallic gate electrode extending over at least a part of said first semiconductor layer, said first semiconductor layer having a thickness sufficiently thin to support without breakdown an electric field in excess of a critical field for avalanche breakdown of said first semiconductor layer, said thickness being less than 100 nm, and said first semiconductor layer providing at least a part of a channel of the transistor, and a second semiconductor layer of said first conductivity type lying between said first semiconductor layer and a gate electrode, said second semiconductor layer forming a surface-adjoining region being so shallow that it is substantially depleted of charge carriers in a zero gate bias condition, said surface-adjoining region having a thickness between 3 nm and 50 nm, wherein a Schottky barrier is formed between said gate electrode and said semiconductor body portion, said Schottky barrier having an effective height raised by said second semiconductor layer, wherein said first semiconductor layer is gallium arsenide and wherein said first semiconductor layer extending below said gate electrode has a thickness of less than 50 nm and a doping concentration of more than 5×10 17 atoms cm -3 .
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