US4422089A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a reduced surface field strength
Assignee: US Philips Corp
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Filing: 1980-12-22
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Granted: 1983-12-20
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Expires: 2000-12-22
Abstract
Abstract A semiconductor device of the "RESURF" type has a substrate region and a superimposed semiconductor layer which forms a p-n junction with the substrate region. The semiconductor layer has an island-shaped region which is depleted at least locally up to the surface at a reverse voltage applied across the p-n junction which is well below the breakdown voltage of the p-n junction. According to the invention the island-shaped part of the semiconductor layer over at least a part of its area has a doping profile in the vertical direction with at least two overlying layer portions with different average net doping concentrations and of the same or opposite conductivity type, so as to increase the current-carrying capacity of the semiconductor layer.
Inventors
- 👤 Henricus M. J. Vaes
- 👤 Johannes A. Appels
- 👤 Adrianus W. Ludikhuize
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/65; H10D10/00; H10D10/40; H10D10/421; H10D30/80; H10D30/83; H10D62/00; H10D62/01; H10D62/051; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/109; H10D62/111; H10D62/13; H10D62/137; H10D62/149; H10D62/151; H10D62/156; H10D62/157; H10D62/17; H10D62/213; H10D62/221; H10D62/124; H10D62/126; H10D62/127; H10D62/177
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
216 words
A semiconductor device having a semiconductor body comprising a substrate region of a first conductivity type, a surface-adjoining layer-shaped semiconductor region provided at the surface of said substrate region, at least a substrate region-adjoining part of said layer-shaped semiconductor region being of a second conductivity type opposite to that of said first type and forming a p-n junction with said substrate region, an island-shaped part of said layer-shaped semiconductor region being bounded laterally by a separation region which extends from the surface over substantially the whole thickness of the semiconductor region, at least a first zone of a semiconductor circuit element being provided within said island-shaped part, the overall net doping of the second conductivity type of said layer-shaped semiconductor region in atoms per unit of surface area being sufficiently small such that when a voltage in the reverse direction is applied across said p-n junction the depletion zone within the island-shaped part will extend at least locally from said p-n junction up to the surface at a voltage which is lower than the breakdown voltage of the p-n junction, at least a part of said island-shaped part of the layer-shaped semiconductor region having a doping profile comprising at least two overlying layer portions of different average net doping concentrations between said substrate and said surface.
Claim 2
Dependent Claim
216 words
A semiconductor device having a semiconductor body comprising a substrate region of a first conductivity type, a surface-adjoining layer-shaped semiconductor region provided at the surface of said substrate region, at least a substrate region-adjoining part of said layer-shaped semiconductor region being of a second conductivity type opposite to that of said first type and forming a p-n junction with said substrate region, an island-shaped part of said layer-shaped semiconductor region being bounded laterally by a separation region which extends from the surface over substantially the whole thickness of the semiconductor region, at least a first zone of a semiconductor circuit element being provided within said island-shaped part, the overall net doping of the second conductivity type of said layer-shaped semiconductor region in atoms per unit of surface area being sufficiently small such that when a voltage in the reverse direction is applied across said p-n junction the depletion zone within the island-shaped part will extend at least locally from said p-n junction up to the surface at a voltage which is lower than the breakdown voltage of the p-n junction, at least a part of said island-shaped part of the layer-shaped semiconductor region having a doping profile comprising at least two overlying layer portions of different average net doping concentrations between said substrate and said surface.
Claim 3
Dependent Claim
30 words
A semiconductor device as claimed in claim 1, characterized in that at least the substrate region-adjoining part of the layer-shaped semiconductor region is more highly doped than the substrate region.
Claim 4
Dependent Claim
30 words
A semiconductor device as claimed in claim 1 or 2, characterized in that said layer portions with different net doping concentrations extend up to the edge of the island-shaped region.
Claim 5
Dependent Claim
24 words
A semiconductor device as claimed in claim 1 or 2, characterized in that the layer-shaped semiconductor region is entirely of the second conductivity type.
Claim 6
Dependent Claim
24 words
A semiconductor device as claimed in claim 4, characterized in that the layer portion having the highest average doping concentration adjoins the substrate region.
Claim 7
Dependent Claim
34 words
A semiconductor device as claimed in claim 5, characterized in that the layer portion having the highest average doping concentration is formed by a layer of the second conductivity type implanted in the substrate.
Claim 8
Dependent Claim
23 words
A semiconductor device as claimed in claim 4, characterized in that the layer portion having the highest average doping concentration adjoins the surface.
Claim 9
Dependent Claim
100 words
A semiconductor device as claimed in claims 1 or 2, characterized in that the layer-shaped semiconductor region comprises at least a first layer portion of the second conductivity type adjoining the substrate region and at least a second layer portion of the first conductivity type provided thereon, the last, surface-adjoining layer portion having a sufficiently low doping level to be fully depleted at a voltage across said p-n junction which is lower than the breakdown voltage, the layer portion of the first conductivity type being connected to a potential which is substantially equal to the potential of the substrate region.
Claim 10
Dependent Claim
35 words
A semiconductor device as claimed in claim 8, characterized in that the layer portion of the first conductivity type are connected to the substrate region by means of semiconductor zones of the first conductivity type.
Claim 11
Dependent Claim
44 words
A semiconductor device as claimed in claim 8, characterized in that the layer-shaped semiconductor region consists of a number of successive layers of alternate conductivity types, in which the layer portions of the second conductivity type are mutually connected to substantially the same potential.
Claim 12
Dependent Claim
18 words
A semiconductor device as claimed in claim 8, characterized in that the second layer portions adjoin the surface.
Claim 13
Dependent Claim
17 words
A semiconductor device as claimed in claim 11, characterized in that the second layer portion is noncontinuous.
Claim 14
Dependent Claim
28 words
A semiconductor device as claimed in claim 1 or 2, characterized in that at least one of the said layer portions is formed by an epitaxially grown layer.
Claim 15
Dependent Claim
27 words
A semiconductor device as claimed in claim 1 or 2, characterized in that the separation region is formed by a semiconductor zone of the first conductivity type.
Claim 16
Dependent Claim
33 words
A semiconductor device as claimed in claims 1 or 2, characterized in that the separation region is formed by a pattern of electrically insulating material at least partly countersunk in the semiconductor body.
Claim 17
Dependent Claim
68 words
A semiconductor device as claimed in claim 1 or 2, characterized in that the substrate region has a doping concentration of at least 10 14 atoms per cm 3 and at most 10 15 atoms per cm 3 and that the overall net doping of the layer-shaped semiconductor region is at least 8×10 11 atoms per cm 2 and at most 1.5×10 12 atoms per cm 2 .
Claim 18
Dependent Claim
37 words
A semiconductor device as claimed in claim 1 or 2, characterized in that the layer-shaped region forms the channel region of a junction field effect transistor (JFET), said JFET having surface-adjoining, spaced-apart source, gate, and drain regions.
Claim 19
Dependent Claim
44 words
A semiconductor device as claimed in claim 1 or 2, further comprising a lateral self-aligned insulated gate field effect transistor and characterized in that the layer-shaped region adjoins the drain zone and the channel region of said lateral self-aligned insulated gate field effect transistor.
Claim 20
Dependent Claim
36 words
A semiconductor device as claimed in claim 1 or 2, characterized in that a part of the layer-shaped region froms the collector zone of a bipolar transistor, said transistor having surface-adjoining, adjacent base and emitter zones.
Claim 21
Dependent Claim
98 words
A semiconductor device as claimed in claims 1 or 2, characterized in that the layer-shaped semiconductor region comprises at least a first layer portion of the second conductivity type adjoining the substrate region and at least a second layer portion of the first conductivity type provided thereon, the layer portions of the first conductivity type being connected to a potential which is substantially equal to the potential of the substrate region, and means for causing the top surface-adjoining layer portion to be fully depleted at a voltage across said p-n junction which is lower than the breakdown voltage.
Claim 22
Dependent Claim
23 words
A semiconductor device as claimed in claim 20, characterized in that said means comprises a sufficiently low doping concentration of said layer portion.
References Cited (Backward Citations)
US4292642A
Cited
US4233617A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |