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US4782034A
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Semi-insulating group III-V based compositions doped using bis arene titanium sources
Assignee: Nokia Bell Labs
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Filing: 1987-06-04
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Granted: 1988-11-01
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Expires: 2007-06-04
Abstract
Abstract Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.
Inventors
- 👤 Andrew G. Dentai
- 👤 Charles H. Joyner, Jr.
- 👤 Timothy W. Weidman
- 👤 John L. Zilko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:28
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/056; Y10S148/11; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
115 words
A process for producing a semiconductor body comprising the steps of (1) forming a region of semi-insulating Group III-V based material by contacting a substrate with a deposition gas stream and (2) forming a conductive region for said semiconductor body, the process CHARACTERIZED IN THAT said region of semi-insulating material is further formed by introducing into said deposition gas stream a dopant precursor comprising a composition chosen from the group consisting of bis(benzene)titanium and cyclopentadienyl cycloheptatrienyl titanium, wherein said deposition gas stream is produced by combining entity compositions chosen from the group consisting of an organic indium-based compound together with a source of phosphorus and an organic gallium-based compound together with a source of antimony.
Claim 2
Dependent Claim
115 words
A process for producing a semiconductor body comprising the steps of (1) forming a region of semi-insulating Group III-V based material by contacting a substrate with a deposition gas stream and (2) forming a conductive region for said semiconductor body, the process CHARACTERIZED IN THAT said region of semi-insulating material is further formed by introducing into said deposition gas stream a dopant precursor comprising a composition chosen from the group consisting of bis(benzene)titanium and cyclopentadienyl cycloheptatrienyl titanium, wherein said deposition gas stream is produced by combining entity compositions chosen from the group consisting of an organic indium-based compound together with a source of phosphorus and an organic gallium-based compound together with a source of antimony.
Claim 3
Dependent Claim
17 words
The process as defined in claim 1 wherein the semi-insulating Group III-V based material includes indium phosphide.
Claim 4
Dependent Claim
14 words
The process as defined in claim 2 wherein the source of phosphorus comprises phosphine.
Claim 5
Dependent Claim
16 words
The process as defined in claim 3 wherein the organic indium-based compound comprised as indium trialkyl.
Claim 6
Dependent Claim
14 words
The process as defined in claim 4 wherein said indium trialkyl comprises trimethyl indium.
Claim 7
Dependent Claim
16 words
The process as defined in claim 2 wherein the organic indium-based compound comprised as indium trialkyl.
Claim 8
Dependent Claim
14 words
The process as defined in claim 6 wherein said indium trialkyl comprises trimethyl indium.
Claim 9
Dependent Claim
55 words
The process as defined in claim 1 wherein said deposition gas stream further comprises a composition chosen from the group consisting of organo-metallic cadmium based precursor compounds, organo-metallic zinc based precursor compounds, organo-metallic magnesium based precursor compounds, organo-metallic beryllium based precursor compounds, organo-metallic germanium based precursor compounds, ferrocene, ferrocene based compounds, and iron carbonyl compounds.
Claim 10
Dependent Claim
17 words
The process as defined in claim 8 wherein the semi-insulating Group III-V based material includes indium phosphide.
Claim 11
Dependent Claim
14 words
The process as defined in claim 9 wherein the source of phosphorus comprises phosphine.
Claim 12
Dependent Claim
16 words
The process as defined in claim 10 wherein the organic indium-based compound comprises an indium trialkyl.
Claim 13
Dependent Claim
14 words
The process as defined in claim 11 wherein said indium trialkyl comprises trimethyl indium.
Claim 14
Dependent Claim
16 words
The process as defined in claim 9 wherein the organic indium-based compound comprises an indium trialkyl.
Claim 15
Dependent Claim
14 words
The process as defined in claim 13 wherein said indium trialkyl comprises dimethyl indium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |