Patent US4777518A successfully refreshed from Google Patents.
US4777518A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device including gate protection circuit with capacitor under input pad
Assignee: Nissan Motor Co Ltd
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Filing: 1987-04-20
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Granted: 1988-10-11
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Expires: 2007-04-20
Abstract
Abstract A semiconductor device including a gate protection circuit in which a N-type or P-type high-concentration impurity semiconductor region is formed under the input terminal such as a bonding pad and is connected to the power supply line or the ground line. Since a distributed capacitance is formed between the bonding pad and the impurity semiconductor region with the silicon oxide film sandwiched therebetween as a dielectric, high-frequency high surge voltage applied to the input bonding pad is readily by-passed from the bonding pad, through the insulating oxide film and the impurity semiconductor region, to the power or ground line, without flowing to other circuits formed on the same substrate, thereby it being possible to securely prevent the circuits on the substrate from being activated erroneously.
Inventors
- 👤 Teruyoshi Mihara
- 👤 Hideo Muro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:00
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D89/00; H10D89/60; H10D89/601
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
153 words
A protection circuit for a semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate; an input terminal pad formed on said insulating film and connectable to an external device, said external device generating a high-frequency surge voltage; a circuit including a current limiting gate protection resistor formed on said film and electrically connected to said input terminal pad, and a clamping diode electrically connected to said resistor and formed at least partially in said substrate; at least one other circuit formed on said substrate; and means consisting essentially of a single semiconductor region, disposed in said semiconductor substrate directly beneath said entire input terminal pad and said insulating film, and connected to a source of reference potential, for forming with said input terminal pad and said insulating film a capacitor, for passing said high-frequency surge voltage applied to said input terminal pad to said source of reference potential.
Claim 2
Dependent Claim
153 words
A protection circuit for a semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate; an input terminal pad formed on said insulating film and connectable to an external device, said external device generating a high-frequency surge voltage; a circuit including a current limiting gate protection resistor formed on said film and electrically connected to said input terminal pad, and a clamping diode electrically connected to said resistor and formed at least partially in said substrate; at least one other circuit formed on said substrate; and means consisting essentially of a single semiconductor region, disposed in said semiconductor substrate directly beneath said entire input terminal pad and said insulating film, and connected to a source of reference potential, for forming with said input terminal pad and said insulating film a capacitor, for passing said high-frequency surge voltage applied to said input terminal pad to said source of reference potential.
Claim 3
Dependent Claim
31 words
A semiconductor device as set forth in claim 1, wherein said reference potential is a power supply line of said semiconductor device when said impurity semiconductor region is of N type.
Claim 4
Dependent Claim
30 words
A semiconductor device as set forth in claim 1, wherein said reference potential is a ground line of said semiconductor device when said impurity semiconductor region is of P type.
Claim 5
Dependent Claim
22 words
A gate protection circuit as claimed in claim 1, wherein said means for forming a capacitor comprises a high-concentration impurity semiconductor region.
Claim 6
Dependent Claim
26 words
A gate protection circuit as claimed in claim 1, wherein said high-concentration impurity region is arranged to lie beneath substantially all of said input terminal pad.
Claim 7
Dependent Claim
164 words
A protection circuit for a semiconductor device, comprisig: a semiconductor substrate; an insulating film formed selectively on said semiconductor substrate; an input terminal pad formed on said insulating film and connectable to an external device, said external device generating a high-frequency surge voltage; a circuit including a current limiting gate protection resistor formed on said film and electrically connected to the input terminal pad, and a clamping diode connected to said resistor and formed at least partially in said substrate; and a high concentration impurity region, disposed in said semiconductor substrate directly beneath said entire input terminal pad and connected to a source of reference potential, for forming with said input terminal pad and said insulating film a capacitor, said capacitor passing high frequency components of said high-frequency surge voltage to said source of reference potential when the high frequency surge voltage is applied to said input terminal pad so that the passage of the high-frequency surge voltage through the semiconductor substrate is prevented.
Claim 8
Dependent Claim
164 words
A protection circuit for a semiconductor device, comprisig: a semiconductor substrate; an insulating film formed selectively on said semiconductor substrate; an input terminal pad formed on said insulating film and connectable to an external device, said external device generating a high-frequency surge voltage; a circuit including a current limiting gate protection resistor formed on said film and electrically connected to the input terminal pad, and a clamping diode connected to said resistor and formed at least partially in said substrate; and a high concentration impurity region, disposed in said semiconductor substrate directly beneath said entire input terminal pad and connected to a source of reference potential, for forming with said input terminal pad and said insulating film a capacitor, said capacitor passing high frequency components of said high-frequency surge voltage to said source of reference potential when the high frequency surge voltage is applied to said input terminal pad so that the passage of the high-frequency surge voltage through the semiconductor substrate is prevented.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-11 | 1992-04-11 | 1992-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-11 | 1996-04-11 | 1996-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-11 | 2000-04-11 | 2000-10-11 | $7700.00 | Window Closed / Lapsed |