Preparation process of compound semiconductor

Claim 2

A process for preparing compound semiconductor thin films in which an organometallic compound cotaining an element of Group III or II and a hydride containing an element of Group V or VI are transported over a heated substrate and are subjected to thermal decomposition, whereby a III-V or 11-VI compound semiconductor is grown over said heated substrate, the process comprising: repeating a cycle consisting of the following steps, whereby a III-V or II-VI compound semiconductor is grown over said heated substrate by forming alternating layers of an element of Group III or II and an element of Group V or VI, respectively: (a) introducing over said heated substrate a carrier gas comprising a hydride containing an element of Group V or VI and present in a first concentration, said carrier gas further comprising at least one organometallic compound containing an element of Group III or II and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one element of Group III or II, wherein said first concentration of said hydride is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V or VI on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to a value at which said element of Group V or VI is not substantially incorporated into said layer of at least one element of Group III or II; (b) interrupting the introduction of said organometallic compound; (c) introducing over said heated substrate a carrier gas comprising a hydride containing an element of Group V or VI and present in a second concentration, which second concentration is higher in hydride than said first concentration, to thermally decompose the hydride and form a layer of an element of Group V or VI on top of said layer of an element of Group III or II; and (d) interrupting the introduction of said hydride at said second concentration.

Claim 3

The process as claimed in claim 1, wherein the temperature of said heated substrate is between 430° C. and 520° C.

Claim 4

The process as claimed in claim 1, wherein said carrier gas is hydrogen.

Claim 5

The process as claimed in claim 1, wherein said first concentration of said hydride in step (a) is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V or VI on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to 4×10 -5 .

Claim 6

The process as claimed in claim 1, wherein said second concentration of said hydride in step (c) is a molar fraction of greater than 1×10 -3 .

Claim 7

The process as claimed in claim 1, wherein the concentration of said at least organometallic compound in step (a) is a molar fraction of greater than 1×10 -4 .

Claim 8

The process as claimed in claim 1, wherein two kinds of organometallic compounds containing different Group III or II elements are introduced in step (a).

Claim 9

The process as claimed in claim 1, wherein said at least one organometallic compound contains ethyl radicals.

Claim 10

A process for preparing compound semiconductor thin films in which an organometallic compound containing an element of Group III or II and a hydride containing an element of Group V or VI are introduced over a heated substrate and are subjected to thermal decomposition, whereby a III-V or II-VI compound semiconductor is grown over said heated substrate, the process comprising: repeating a cycle consisting of the following steps, whereby a III-V or II-VI compound semiconductor is grown over said heated substrate by forming alternating layers of an element of Group III or II and an element of Group V or VI, respectively: (a) introducing over said heated substrate a first carrier gas comprising a hydride containing an element of Group V or VI and present in a first concentration, said first carrier gas further comprising at least one organometalIic compound containing an element of Group III or II and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one element of Group III or II, wherein said first concentration of said hydride is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V or VI on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to a value at which said element of Group V or VI is not substantially incorporated into said layer of at least one element of Group III or II; (b) interrupting the introduction of said organometallic compound; and (c) introducing over said heated substrate a second carrier gas comprising a hydride containing an element of Group V or VI and present in a second concentration, which second concentration is higher in hydride than said first concentration, to thermally decompose the hydride and form a layer of an element of Group V or VI on top of said layer of at least one element of Group III or II; and (d) interrupting the introduction of said hydride at said second concentration; and (e) introducing over said heated substrate a third carrier gas comprising a hydrogen halide and present in halide which is diluted by a third carrier gas to a concentration of said hydrogen halide.

Claim 11

A process for preparing compound semiconductor thin films in which an organometallic compound containing an element of Group III or II and a hydride containing an element of Group V or VI are introduced over a heated substrate and are subjected to thermal decomposition, whereby a III-V or II-VI compound semiconductor is grown over said heated substrate, the process comprising: repeating a cycle consisting of the following steps, whereby a III-V or II-VI compound semiconductor is grown over said heated substrate by forming alternating layers of an element of Group III or II and an element of Group V or VI, respectively: (a) introducing over said heated substrate a first carrier gas comprising a hydride containing an element of Group V or VI and present in a first concentration, said first carrier gas further comprising at least one organometalIic compound containing an element of Group III or II and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one element of Group III or II, wherein said first concentration of said hydride is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V or VI on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to a value at which said element of Group V or VI is not substantially incorporated into said layer of at least one element of Group III or II; (b) interrupting the introduction of said organometallic compound; and (c) introducing over said heated substrate a second carrier gas comprising a hydride containing an element of Group V or VI and present in a second concentration, which second concentration is higher in hydride than said first concentration, to thermally decompose the hydride and form a layer of an element of Group V or VI on top of said layer of at least one element of Group III or II; and (d) interrupting the introduction of said hydride at said second concentration; and (e) introducing over said heated substrate a third carrier gas comprising a hydrogen halide and present in halide which is diluted by a third carrier gas to a concentration of said hydrogen halide.

Claim 12

The process as claimed in claim 9, wherein said, second, and third carrier gases in steps (c) and (e) consist of hydrogen.

Claim 13

The process as claimed in claim 9, wherein said first concentration of said hydride in step (a) is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V or VI on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to 4×10 -5 .

Claim 14

The process as claimed in claim 9, wherein said second concentration of said hydride in step (c) is a molar fraction of greater than 1×10 -3 .

Claim 15

The process as claimed in claim 9, wherein the concentration of said at least one organometallic compound in step (a) is a molar fraction greater than 1×10 -4 .

Claim 16

The process as claimed in claim 9, wherein the concentration of said hydrogen halide in step (e) is a molar fraction of greater than 1×10 -4 .

Claim 17

The process as claimed in claim 9, wherein said hydrogen halide is hydrogen chloride.

Claim 18

The process as claimed in claim 9, wherein said heated substrate is mantained at a temperature higher than 400° C. but lower than 600° C.

Claim 19

The process as claimed in claim 9, wherein two kinds of organometallic compounds containing different Group III or II elements are introduced in step (a).

Claim 20

The process as claimed in claim 9, wherein said at least one organometallic compound contains ethyl radicals.

Claim 21

A process for preparing compound semiconductor thin films, comprising: repeating a cycle consisting of the following steps, whereby a compound semiconductor which is an arsenide of a Group III or II element is grown over said heated substrate by forming alternating layers of at least one element of Group III or II and arsenic, respectively: (a) introducing over said heated substrate a carrier gas comprising hydrogen and arsine (AsH 3 ) present in a first concentration, said carrier gas further comprising at least one organometallic compound containig an element of Group III or II and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one of Group III or II, wherein said first concentration of arsine is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of arsenic on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to a value at which said arsenic is not substantially incorporated into said layer of at least one element of Group III or II; (b) interrupting the introduction of said organometallic compound; (c) introducing said heated substrate a carrier gas comprising hydrogen and arsine (AsH 3 ) and present in a second concentration, which second concentration is higher in arsine (AsH 3 ) than said first concentration, to thermally decompose the arsine (AsH 3 ) and form a layer of arsenic on top of said layer of at least one element of Group III or II; and introducing in any of steps (a) through (c), of said cycle silane (SiH 4 ), thereby doping said III-V or II-VI compound semiconductor.

Claim 22

A process for preparing compound semiconductor thin films, comprising: repeating a cycle consisting of the following steps, whereby a compound semiconductor which is an arsenide of a Group III or II element is grown over said heated substrate by forming alternating layers of at least one element of Group III or II and arsenic, respectively: (a) introducing over said heated substrate a carrier gas comprising hydrogen and arsine (AsH 3 ) present in a first concentration, said carrier gas further comprising at least one organometallic compound containig an element of Group III or II and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one of Group III or II, wherein said first concentration of arsine is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of arsenic on said III-V or II-VI compound semiconductor at the temperature of said heated substrate up to a value at which said arsenic is not substantially incorporated into said layer of at least one element of Group III or II; (b) interrupting the introduction of said organometallic compound; (c) introducing said heated substrate a carrier gas comprising hydrogen and arsine (AsH 3 ) and present in a second concentration, which second concentration is higher in arsine (AsH 3 ) than said first concentration, to thermally decompose the arsine (AsH 3 ) and form a layer of arsenic on top of said layer of at least one element of Group III or II; and introducing in any of steps (a) through (c), of said cycle silane (SiH 4 ), thereby doping said III-V or II-VI compound semiconductor.

Claim 23

A process for preparing compound semiconductor thin films, comprising: repeating a cycle consisting of the following steps, whereby a III-V compound semiconductor is grown over said heated substrate by forming alternating layers of an element of Group III and an element of Group V, respectively: (a) introducing over said heated substrate a carrier gas comprising hydrogen and a hydride containing an element of Group V and present in a first concentration, said carrier gas further comprising at least one organometallic compound containing an element of Group III and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one element of Group III, wherein said first concentration of said hydride is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V on said III-V compound semiconductor at the temperature of said heated substrate up to a value at which said element of Group V is not substantially incorporated into said layer of at least one element of Group III; (b) interrupting the introduction of said organometallic compound; (c) introducing on said heated substrate a carrier gas comprising hydrogen and a hydride containing an element of Group V and present in a second concentration, which second concentration is higher in hydride than said first concentration, to thermally decompose the hydride and form a layer of an element of Group V on top of said layer of at least one element of Group III; (d) interrupting the introduction of said hydride at said second concentration; (e) introducing over said heated substrate a hydrogen halide which is diluted by said hydrogen carrier gas; (f) interrupting the introduction of said hydrogen halide; and (g) introducing over said heated substrate said carrier gas comprising hydrogen together with a compound containing an element in Group IV, VI or II, thereby doping said III-V compound semiconductor.

Claim 24

A process for preparing compound semiconductor thin films, comprising: repeating a cycle consisting of the following steps, whereby a III-V compound semiconductor is grown over said heated substrate by forming alternating layers of an element of Group III and an element of Group V, respectively: (a) introducing over said heated substrate a carrier gas comprising hydrogen and a hydride containing an element of Group V and present in a first concentration, said carrier gas further comprising at least one organometallic compound containing an element of Group III and present in a concentration, to thermally decompose the organometallic compound and form a layer of at least one element of Group III, wherein said first concentration of said hydride is a molar fraction ranging from a value which corresponds to the equilibrium molar fraction of said element of Group V on said III-V compound semiconductor at the temperature of said heated substrate up to a value at which said element of Group V is not substantially incorporated into said layer of at least one element of Group III; (b) interrupting the introduction of said organometallic compound; (c) introducing on said heated substrate a carrier gas comprising hydrogen and a hydride containing an element of Group V and present in a second concentration, which second concentration is higher in hydride than said first concentration, to thermally decompose the hydride and form a layer of an element of Group V on top of said layer of at least one element of Group III; (d) interrupting the introduction of said hydride at said second concentration; (e) introducing over said heated substrate a hydrogen halide which is diluted by said hydrogen carrier gas; (f) interrupting the introduction of said hydrogen halide; and (g) introducing over said heated substrate said carrier gas comprising hydrogen together with a compound containing an element in Group IV, VI or II, thereby doping said III-V compound semiconductor.

Claim 25

The process as claimed in claim 20, wherein said compound containing an element in Group IV, VI or II in step (g) is simultaneously introduced together with said at least one organometallic compound containing an element in Group III (a).

Claim 26

The process as claimed in claim 20, wherein said compound containing an element in Group IV, VI, or II in step (g) is introduced immediately after step (b).

Claim 27

The process as claimed in claim 20, wherein said compound containing an element in Group IV, VI or II in step (g) is introduced immediately after the interruption of the introduction of said hydride at said second concentration.

Claim 28

The process as claimed in claim 20, wherein said compound containing an element in Group IV, VI or II in step (g) is introduced during all of steps (a) through (f) of said cycle.

Claim 29

The process as claimed in claim 20, wherein said compound containing an element in Group IV, VI or II in step (g) and is silane (SiH 4 ).

Claim 30

The process as claimed in claim 25, wherein said silane has a molar fraction between 10 -7 and 10 -3 .