Patent US4766094A successfully refreshed from Google Patents.
US4766094A
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Semiconductor doping process
Assignee: Microsemi Corp Power Products Group
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Filing: 1986-03-21
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Granted: 1988-08-23
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Expires: 2006-03-21
Abstract
Abstract A method for making a semiconductor device, such as a power-MOS transistor, wherein dopant is introduced into the structure underlying a lead contact pad to create a conducting subregion which minimizes electrical conductive breakdown.
Inventors
- 👤 Theodore G. Hollinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
111 words
In the manufacture of a semiconductor device which would otherwise include adjacent, spaced zones on opposite sides of an enlarged surface area in the device, with these zones having a known N/P characteristic and exhibiting a proneness to electrical breakdown, forming in a substantially coextensive/contractive manner over the region between such zones an oxide layer which contains a dopant that is electrically compatible with the N/P characteristic of such zones, driving the dopant in such layer therefrom substantially coextensively into, and across the expanse of, such region to create therein a doped subregion, and by said driving, establishing an electrical connection between such subregion and such zones which obviates electrical breakdown.
Claim 2
Dependent Claim
111 words
In the manufacture of a semiconductor device which would otherwise include adjacent, spaced zones on opposite sides of an enlarged surface area in the device, with these zones having a known N/P characteristic and exhibiting a proneness to electrical breakdown, forming in a substantially coextensive/contractive manner over the region between such zones an oxide layer which contains a dopant that is electrically compatible with the N/P characteristic of such zones, driving the dopant in such layer therefrom substantially coextensively into, and across the expanse of, such region to create therein a doped subregion, and by said driving, establishing an electrical connection between such subregion and such zones which obviates electrical breakdown.
Claim 3
Dependent Claim
17 words
The process of claim 1, wherein said driving establishes conductive contact between such subregion and such zones.
Claim 4
Dependent Claim
30 words
The process of claims 1 or 2, wherein said forming includes shaping such layer, where the same is adjacent such zones, with a thickness which diminishes progressing toward the zones.
Claim 5
Dependent Claim
33 words
The process of claims 1 or 2, wherein said driving creates such doped subregion with a thickness in such region which, throughout, closely matches the thickness of the N/P characteristic in such zones.
Claim 6
Dependent Claim
56 words
The process of claim 1 or 2, wherein said forming includes shaping such layer, where the same is adjacent such zones, with a thickness which diminished progressing toward the zones, and said driving creates such doped subregion with a thickness in such region which, throughout, closely matches the thickness of the N/P characteristic in such zones.
References Cited (Backward Citations)
US3458781A
Cited
US3600647A
Cited
GB1390135A
Cited
US4376286A
Cited
US4376286B1
Cited
US4375999A
Cited
US4345265A
Cited
US4404733A
Cited
US4599118A
Cited
US4416708A
Cited
US4397887A
Cited
US4499652A
Cited
US4596068A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |