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US4766087A
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Electrical contacts containing thallium (III) oxide prepared at relatively low temperature
Assignee: Union Oil Company of California
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Filing: 1987-07-27
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Granted: 1988-08-23
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Expires: 2007-07-27
Abstract
Abstract Electronic semiconductor devices are prepared having contacts forming rectifying and non-rectifying junctions between thallium (III) oxide and semincoductors. Such contacts may be formed at relatively low temperatures during preparation of bipolar, unipolar, and microwave semiconductor devices.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:02
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F19/00; H10F19/20; H10F77/00; H10F77/10; H10F77/12; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
63 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component, and wherein the bulk of said p-type semiconductor component has a temperature less than 500° F. during said depositing.
Claim 2
Independent Claim
63 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component, and wherein the bulk of said p-type semiconductor component has a temperature less than 500° F. during said depositing.
Claim 3
Dependent Claim
22 words
The method defined in claim 1 wherein said temperature of the bulk of said p-type semiconductor is less than about 215° F.
Claim 4
Dependent Claim
22 words
The method defined in claim 1 wherein said temperature of the bulk of said p-type semiconductor is less than about 110° F.
Claim 5
Dependent Claim
23 words
The method defined in claim 1 wherein said electronic semiconductor device is selected from the group consisting of unipolar, bipolar, and microwave devices.
Claim 6
Dependent Claim
16 words
The method defined in claim 1 used in the preparation of very large scale integrated circuits.
Claim 7
Dependent Claim
23 words
The method defined in claim 1 wherein said p-type semiconductor is selected from the group consisting of silicon, GaAs, InP, CdSe, and GaP.
Claim 8
Dependent Claim
20 words
The method defined in claim 1 wherein said non-rectifying junction has a resistance less than about 10 ohm-cm 2 .
Claim 9
Dependent Claim
32 words
The method defined in claim 1 further comprising at least one additional depositing step wherein thallium (III) oxide is deposited on an n-type semiconductor at said temperature to form a rectifying junction.
Claim 10
Independent Claim
62 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component, and wherein the bulk of said semiconductor component has a temperature less than 500° F. during said depositing.
Claim 11
Independent Claim
62 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component, and wherein the bulk of said semiconductor component has a temperature less than 500° F. during said depositing.
Claim 12
Dependent Claim
21 words
The method defined in claim 9 wherein said temperature of the bulk of said semiconductor is less than about 215° F.
Claim 13
Dependent Claim
21 words
The method defined in claim 9 wherein said temperature of the bulk of said semiconductor is less than about 110° F.
Claim 14
Dependent Claim
23 words
The method defined in claim 9 wherein said electronic semiconductor device is selected from the group consisting of unipolar, bipolar and microwave devices.
Claim 15
Dependent Claim
17 words
The method defined in claim 9 is used in the preparation of very large scale integrated circuits.
Claim 16
Dependent Claim
13 words
The method defined in claim 9 wherein said step of depositing is photo-assisted.
Claim 17
Dependent Claim
29 words
The method defined in claim 14 wherein the light source for said photo-assisted step is selected from the group consisting of laser beam sources and highly collimated light sources.
Claim 18
Dependent Claim
13 words
The method defined in claim 14 wherein said photo-assisted step comprises direct writing.
Claim 19
Dependent Claim
23 words
The method defined in claim 9 wherein said n-type semiconductor is selected from the group consisting of silicon, GaAs, InP, CdSe, and GaP.
Claim 20
Dependent Claim
21 words
The method defined in claim 9 wherein said rectifying junction has a diode quality factor from about 1.0 to about 2.0.
Claim 21
Dependent Claim
19 words
The method defined in claim 9 wherein said rectifying junction has a breakdown voltage greater than about +9.0 V.
Claim 22
Dependent Claim
28 words
The method defined in claim 9 wherein said rectifying junction has a barrier height at least 80 percent of that of the band gap of said n-type semiconductor.
Claim 23
Independent Claim
104 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component, and the step of depositing n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component, and wherein the bulk of said n-type semiconductor or said p-type semiconductor components has a temperature less than about 215° F. during said depositing steps.
Claim 24
Independent Claim
104 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component, and the step of depositing n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component, and wherein the bulk of said n-type semiconductor or said p-type semiconductor components has a temperature less than about 215° F. during said depositing steps.
References Cited (Backward Citations)
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