US4492811A
Expired / Lapsed
US
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Heterojunction photovoltaic device
Assignee: Union Oil Company of California
•
Filing: 1983-08-01
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Granted: 1985-01-08
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Expires: 2003-08-01
Abstract
Abstract A heterojunction photovoltaic device, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in highly efficient photovoltaic cells and radiometric detection cells.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:07
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F19/00; H10F19/20; H10F77/00; H10F77/10; H10F77/12; H10F77/95; H10F77/953; H10F77/955; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
37 words
A photovoltaic device comprising a conductive solid coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. forming a heterojunction with a solid substrate containing an n-type semiconductor material.
Claim 2
Dependent Claim
37 words
A photovoltaic device comprising a conductive solid coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. forming a heterojunction with a solid substrate containing an n-type semiconductor material.
Claim 3
Dependent Claim
17 words
The device defined in claim 1 wherein said coating material has a resistivity less than said substrate.
Claim 4
Dependent Claim
24 words
The device defined in claim 1 wherein said semiconductor contained in said substrate has a band gap from about 0.5 to about 4.0 e.V.
Claim 5
Dependent Claim
23 words
The device defined in claim 1 wherein said coating material has a resistivity less than about 10 -2 ohm-cm, measured at room temperature.
Claim 6
Dependent Claim
27 words
The device defined in claim 1 wherein said coating material has a band gap at least equal to or greater than the band gap of said substrate.
Claim 7
Dependent Claim
26 words
The device defined in claim 1 wherein said semiconductor contained in said substrate is selected from the group consisting of Si, GaAs, InP, CdSe, and GaP.
Claim 8
Dependent Claim
14 words
The device defined in claim 1 wherein said coating material is doped to degeneracy.
Claim 9
Dependent Claim
13 words
The device defined in claim 1 wherein said coating material is naturally degenerate.
Claim 10
Dependent Claim
20 words
The device defined in claim 1 further comprising a front ohmic electrode on said coating material having a grid configuration.
Claim 11
Dependent Claim
23 words
The device defined in claim 1 wherein said coating material has a resistivity less than about 10 -3 ohm-cm, measured at room temperature.
Claim 12
Dependent Claim
58 words
The device defined in claim 1 wherein said coating material is selected from the group consisting of Tl 2 O 3 , CdO, Bi 2 O 3 , PbO 2 , Cu 2 O, Cr 2 O 3 , Ag 2 O, RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 .
Claim 13
Dependent Claim
30 words
The device defined in claim 1 further comprising a thin layer of material having a band gap greater than about 3.0 e.V. between said semiconductor material and said coating material.
Claim 14
Dependent Claim
10 words
A photovoltaic cell comprising the photovoltaic device of claim 1.
Claim 15
Dependent Claim
17 words
The cell defined in claim 13 in which the series resistance is less than about 100 ohms.
Claim 16
Dependent Claim
15 words
The cell defined in claim 13 producing greater than about one mA/cm 2 of photocurrent.
Claim 17
Dependent Claim
13 words
The cell defined in claim 13 further comprising means for concentrating light intensity.
Claim 18
Dependent Claim
11 words
A radiometric detection cell comprising the photovoltaic device of claim 1.
Claim 19
Dependent Claim
18 words
The device defined in claim 1 comprising a photovoltaic cell having an efficiency greater than about 5 percent.
Claim 20
Dependent Claim
56 words
A photovoltaic device comprising a coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. and a resistivity less than about 10 -2 ohm-cm, said coating material forming a heterojunction with a substrate containing an n-type semiconductor, said device containing a layer of insulating material at said heterojunction.
Claim 21
Dependent Claim
56 words
A photovoltaic device comprising a coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. and a resistivity less than about 10 -2 ohm-cm, said coating material forming a heterojunction with a substrate containing an n-type semiconductor, said device containing a layer of insulating material at said heterojunction.
Claim 22
Dependent Claim
18 words
The device defined in claim 19 comprising a photovoltaic cell having an efficiency greater than about 5 percent.
Claim 23
Dependent Claim
24 words
The device defined in claim 19 wherein said semiconductor contained in said substrate has a band gap from about 0.5 to about 4.0 e.V.
Claim 24
Dependent Claim
23 words
The device defined in claim 19 wherein said coating material has a resistivity less than about 10 -4 ohm-cm, measured at room temperature.
Claim 25
Dependent Claim
26 words
The device defined in claim 19 wherein said semiconductor contained in said substrate is selected from the group consisting of Si, GaAs, InP, CdSe, and GaP.
Claim 26
Dependent Claim
59 words
The device as defined in claim 19 wherein said coating material is selected from the group consisting of Tl 2 O 3 , CdO, Bi 2 O 3 , PbO 2 , Cu 2 O, Cr 2 O 3 , Ag 2 O, RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 .
Claim 27
Dependent Claim
20 words
A photovoltaic device comprising a coating material containing degenerate n-type thallium (III) oxide on a substrate containing an n-type semiconductor.
Claim 28
Dependent Claim
20 words
A photovoltaic device comprising a coating material containing degenerate n-type thallium (III) oxide on a substrate containing an n-type semiconductor.
Claim 29
Dependent Claim
17 words
The device defined in claim 25 wherein said substrate forms a heterojunction with said thallium (III) oxide.
Claim 30
Dependent Claim
25 words
The device defined in claim 26 wherein a material having a band gap greater than about 4.0 e.V. comprises a thin layer at said heterojunction.
Claim 31
Dependent Claim
24 words
The device defined in claim 26 wherein said semiconductor contained in said substrate has a band gap from about 0.7 to about 2.5 e.V.
Claim 32
Dependent Claim
16 words
The device defined in claim 26 wherein said semiconductor contained in said substrate comprises n-type silicon.
Claim 33
Dependent Claim
38 words
The device defined in claim 29 further comprising a layer comprising silicon dioxide having an average thickness of about one to about 50 angstroms and located at said heterojunction between said n-type silicon and said thallium (III) oxide.
Claim 34
Dependent Claim
23 words
The device defined in claim 26 wherein said n-type semiconductor is selected from the group consisting of Si, GaAs, InP, CdSe, and GaP.
Claim 35
Dependent Claim
29 words
The device defined in claim 25 wherein said thallium (III) oxide is contained on at least a portion of an outermost layer on a front surface of said device.
Claim 36
Dependent Claim
26 words
The device defined in claim 25 wherein said thallium (III) oxide is dispersed on said substrate to an average thickness of less than 10 5 angstroms.
Claim 37
Dependent Claim
26 words
The device defined in claim 25 wherein said substrate has a band gap equal to or less than the band gap of said thallium (III) oxide.
Claim 38
Dependent Claim
10 words
A photovoltaic cell comprising the photovoltaic device of claim 18.
Claim 39
Dependent Claim
17 words
The cell defined in claim 35 in which the series resistance is less than about 100 ohms.
Claim 40
Dependent Claim
16 words
The cell defined in claim 35 wherein said semiconductor contained in said substrate comprises n-type silicon.
Claim 41
Dependent Claim
16 words
The cell defined in claim 35 producing a photocurrent greater than about one mA/cm 2 .
Claim 42
Dependent Claim
18 words
The cell defined in claim 35 further comprising means for concentrating light intensity, said means comprising a reflector.
Claim 43
Dependent Claim
18 words
The cell defined in claim 35 further comprising means for concentrating light intensity, said means comprising a lens.
Claim 44
Dependent Claim
20 words
The cell defined in claim 35 further comprising means for concentrating light intensity, said means comprising a luminescent solar collector.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-08 | 1988-07-09 | 1989-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-08 | 1992-07-09 | 1993-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-08 | 1996-07-09 | 1997-01-08 | $7700.00 | Window Closed / Lapsed |