US4608750A
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US
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Preparation of photovoltaic device by electrochemical deposition
Assignee: Union Oil Company of California
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Filing: 1984-09-24
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Granted: 1986-09-02
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Expires: 2004-09-24
Abstract
Abstract A heterojunction photovoltaic device, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in highly efficient photovoltaic cells and radiometric detection cells.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:01
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F19/00; H10F19/20; H10F77/00; H10F77/95; H10F77/953; H10F77/955; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S204/00; Y10S204/03; Y10S205/00; Y10S205/923
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
54 words
A method for the preparation of a photovoltaic device comprising the step of photoelectrochemical deposition of a conductive coating material having a band gap from greater than 0 to about 3.0 e.V. forming a junction on a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type and intrinsic semiconductors.
Claim 2
Independent Claim
54 words
A method for the preparation of a photovoltaic device comprising the step of photoelectrochemical deposition of a conductive coating material having a band gap from greater than 0 to about 3.0 e.V. forming a junction on a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type and intrinsic semiconductors.
Claim 3
Dependent Claim
18 words
The method defined in claim 1 wherein said substrate is employed as an anode during said photoelectrochemical deposition.
Claim 4
Dependent Claim
11 words
The method defined in claim 2 further comprising potentiostatic photoelectrochemical deposition.
Claim 5
Dependent Claim
20 words
The method defined in claim 3 wherein said coating material comprises thallium (III) oxide and said substrate comprises n-type silicon.
Claim 6
Independent Claim
52 words
A method for the preparation of a photovoltaic device comprising the step of photoelectrochemical deposition of a conductive solid coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. which forms a heterojunction with a solid substrate consisting essentially of an n-type semiconductor material.
Claim 7
Independent Claim
52 words
A method for the preparation of a photovoltaic device comprising the step of photoelectrochemical deposition of a conductive solid coating material containing a degenerate n-type semiconductor having a band gap from about 0.5 to about 2.35 e.V. which forms a heterojunction with a solid substrate consisting essentially of an n-type semiconductor material.
Claim 8
Dependent Claim
17 words
The method defined in claim 5 wherein said coating material has a resistivity less than said substrate.
Claim 9
Dependent Claim
24 words
The method defined in claim 5 wherein said semiconductor contained in said substrate has a band gap from about 0.5 to about 3.0 e.V.
Claim 10
Dependent Claim
23 words
The method defined in claim 5 wherein said coating material has a resistivity less than about 10 -2 ohm-cm, measured at room temperature.
Claim 11
Dependent Claim
27 words
The method defined in claim 5 wherein said coating material has a band gap at least equal to or greater than the band gap of said substrate.
Claim 12
Dependent Claim
26 words
The method defined in claim 5 wherein said semiconductor contained in said substrate is selected from the group consisting of GaAs, InP, CdSe, Si, and GaP.
Claim 13
Dependent Claim
14 words
The method defined in claim 5 wherein said coating material is doped to degeneracy.
Claim 14
Dependent Claim
13 words
The method defined in claim 5 wherein said coating material is naturally degenerate.
Claim 15
Dependent Claim
21 words
The method defined in claim 5 further comprising attaching a front ohmic electrode having a grid configuration to said coating material.
Claim 16
Dependent Claim
23 words
The method defined in claim 5 wherein said coating material has a resistivity less than about 10 -3 ohm-cm, measured at room temperature.
Claim 17
Dependent Claim
58 words
The method defined in claim 5 wherein said coating material is selected from the group consisting of Tl 2 O 3 , CdO, Bi 2 O 3 , PbO 2 , Cu 2 O, Cr 2 O 3 , Ag 2 O, RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 .
Claim 18
Dependent Claim
43 words
The method defined in claim 5 further comprising the step of forming a thin layer of material having a band gap greater than about 3.0 e.V. between said semiconductor material and said coating material prior to said photoelectrochemical deposition of said coating material.
Claim 19
Dependent Claim
21 words
The method defined in claim 5 wherein said photoelectrochemical deposition is stopped when photocurrent is within 20 percent of maximum value.
Claim 20
Dependent Claim
18 words
The method defined in claim 5 wherein said substrate is employed as an anode during said photoelectrochemical deposition.
Claim 21
Dependent Claim
11 words
The method defined in claim 18 further comprising potentiostatic photoelectrochemical deposition.
Claim 22
Independent Claim
32 words
A method for the preparation of a photovoltaic device comprising the step of electrochemical deposition of a coating material containing degenerate n-type thallium (III) oxide on a substrate containing an n-type semiconductor.
Claim 23
Independent Claim
32 words
A method for the preparation of a photovoltaic device comprising the step of electrochemical deposition of a coating material containing degenerate n-type thallium (III) oxide on a substrate containing an n-type semiconductor.
Claim 24
Dependent Claim
17 words
The method defined in claim 20 wherein said substrate forms a heterojunction with said thallium (III) oxide.
Claim 25
Dependent Claim
35 words
The method defined in claim 21 wherein a material having a band gap greater than about 4.0 e.V. forms a thin layer at said heterojunction prior to said electrochemical deposition of said thallium (III) oxide.
Claim 26
Dependent Claim
24 words
The method defined in claim 21 wherein said semiconductor contained in said substrate has a band gap from about 0.7 to about 2.5 e.V.
Claim 27
Dependent Claim
16 words
The method defined in claim 21 wherein said semiconductor contained in said substrate comprises n-type silicon.
Claim 28
Dependent Claim
48 words
The method defined in claim 24 further comprising forming a layer comprising silicon dioxide having an average thickness of about one to about 50 angstroms and located at said heterojunction between said n-type silicon and said thallium (III) oxide prior to said electrodeposition of said thallium (III) oxide.
Claim 29
Dependent Claim
29 words
The method defined in claim 20 wherein said thallium (III) oxide is contained on at least a portion of an outermost layer on a front surface of said device.
Claim 30
Dependent Claim
26 words
The method defined in claim 20 wherein said thallium (III) oxide is dispersed on said substrate to an average thickness of less than 10 5 angstroms.
Claim 31
Dependent Claim
30 words
The method defined in claim 20 wherein said semiconductor contained in said substrate has a band gap equal to or less than the band gap of said thallium (III) oxide.
Claim 32
Dependent Claim
13 words
The method defined in claim 20 wherein said electrochemical deposition comprises photoelectrochemical deposition.
Claim 33
Dependent Claim
11 words
The method defined in claim 29 further comprising potentiostatic electrochemical deposition.
Claim 34
Dependent Claim
12 words
The method defined in claim 30 wherein said substrate comprises n-type silicon.
References Cited (Backward Citations)
US2877284A
Cited
US4400244A
Cited
US4149902A
Cited
US4191593A
Cited
GB2006268A
Cited
US4166917A
Cited
US4259122A
Cited
US4251327A
Cited
US4360702A
Cited
US4366335A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
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