Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
76 words
A method of preventing latchup in semiconductor devices comprising the steps of (a) providing a semiconductor substrate whose surface includes n-type wells, wherein each well exhibits a predetermined lateral resistance; (b) selectively bombarding the portion of said semiconductor substrate which includes the n-type wells with protons to form n + regions within predetermined lateral portion of said n-type wells, wherein said n + regions reduce the predetermined lateral resistance of said n-type wells to prevent latchup.
Claim 2
Independent Claim
76 words
A method of preventing latchup in semiconductor devices comprising the steps of (a) providing a semiconductor substrate whose surface includes n-type wells, wherein each well exhibits a predetermined lateral resistance; (b) selectively bombarding the portion of said semiconductor substrate which includes the n-type wells with protons to form n + regions within predetermined lateral portion of said n-type wells, wherein said n + regions reduce the predetermined lateral resistance of said n-type wells to prevent latchup.
Claim 3
Dependent Claim
69 words
The method according to claim 1, wherein step (b) further contains the steps of (c) forming a layer of masking material over the surface of the semiconductor substrate; (d) patterning said masking layer with a mask which coincides with the locations of the n-type wells; (e) removing the portion of said masking layer which covers said n-type wells; and (f) directing the proton bombardment at the exposed n-type wells.
Claim 4
Dependent Claim
21 words
The method according to claim 1 wherein hydrogen ions are used as the source of the proton bombardment in step (b).
Claim 5
Dependent Claim
21 words
The method according to claim 1 wherein doubly ionized helium is used as the source of proton bombardment in step (b).
Claim 6
Dependent Claim
28 words
The method according to claim 3 wherein the hydrogen ions comprise a dose of approximately 1×10 15 cm -2 and are implanted with an energy of approximately 150eV.
Claim 7
Independent Claim
76 words
A method of reducing latchup in a twin-tub CMOS structure, the structure comprising a first MOS device formed in a p-type conductivity tub and a second MOS device formed in an n-type conductivity tube contiguous to the p-type conductivity tub, the method comprising the step of: (a) bombarding the n-type conductivity tub with protons of sufficient dosage and energy to create an n + region in the tub below the location of the second MOS device.
Claim 8
Independent Claim
76 words
A method of reducing latchup in a twin-tub CMOS structure, the structure comprising a first MOS device formed in a p-type conductivity tub and a second MOS device formed in an n-type conductivity tube contiguous to the p-type conductivity tub, the method comprising the step of: (a) bombarding the n-type conductivity tub with protons of sufficient dosage and energy to create an n + region in the tub below the location of the second MOS device.
Claim 9
Dependent Claim
14 words
The method of claim 6 wherein hydrogen ions are used as the proton source.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein doubly-ionized helium is used as the proton source.
Claim 11
Dependent Claim
26 words
The method of claim 7 wherein the hydrogen ions comprise a dosage of 1×10 15 cm -2 and are implanted with an energy of approximately 150eV.