US4619033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabricating of a CMOS FET with reduced latchup susceptibility
Assignee: RCA Corp
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Filing: 1985-05-10
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Granted: 1986-10-28
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Expires: 2005-05-10
Abstract
Abstract A method for forming a CMOS FET structure includes the steps of forming an apertured insulating layer on a silicon substrate and epitaxially forming a monocrystalline silicon island of first conductivity type through an aperture therein. The exposed surface of the silicon island is then thermally oxidized and the portion of the insulating layer not covered by the oxide is removed. A monocrystalline silicon island of second conductivity type is then formed adjacent to the oxidized silicon island of first conductivity type.
Inventors
- 👤 Lubomir L. Jastrzebski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
81 words
A method for forming a CMOS FET structure comprising: forming an apertured insulating layer on a silicon substrate; epitaxially forming a monocrystalline silicon island of first conductivity type through an aperture in said layer; thermally oxidizing the exposed surface of said island so as to form an oxide thereon; removing the portion of the insulating layer not covered by said oxide; and forming a monocrystalline silicon island of second conductivity type adjacent to said oxidized silicon island of first conductivity type.
Claim 2
Independent Claim
81 words
A method for forming a CMOS FET structure comprising: forming an apertured insulating layer on a silicon substrate; epitaxially forming a monocrystalline silicon island of first conductivity type through an aperture in said layer; thermally oxidizing the exposed surface of said island so as to form an oxide thereon; removing the portion of the insulating layer not covered by said oxide; and forming a monocrystalline silicon island of second conductivity type adjacent to said oxidized silicon island of first conductivity type.
Claim 3
Dependent Claim
21 words
A method in accordance with claim 1 wherein said first conductivity type is P and said second conductivity type is N.
Claim 4
Dependent Claim
17 words
A method in accordance with claim 1 wherein said silicon substrate is of N+ type monocrystalline material.
Claim 5
Dependent Claim
17 words
A method in accordance with claim 1 wherein said silicon substrate is of P+ type monocrystalline material.
Claim 6
Dependent Claim
32 words
A method in accordance with claim 1 futher comprising epitaxially forming said first conductivity type monocrystalline silicon islands such that said islands extend laterally over said insulating layer by a predetermined distance.
Claim 7
Dependent Claim
37 words
A method in accordance with claim 1 wherein forming said insulating layer comprises forming a layer of silicon dioxide on a surface of the substrate and forming a layer of silicon nitride on said silicon dioxide layer.
Claim 8
Dependent Claim
23 words
A method in accordance with claim 1 wherein forming said monocrystalline silicon islands of first conductivity type comprises a two stage deposition/etching cycle.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-27 | 1990-04-28 | 1990-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-27 | 1994-04-28 | 1994-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-27 | 1998-04-28 | 1998-10-28 | $7700.00 | Window Closed / Lapsed |