US4758532A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a heterostructure semiconductor laser device by pressure cleaving of a cantilever structure
Assignee: Mitsubishi Electric Corp
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Filing: 1987-09-02
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Granted: 1988-07-19
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Expires: 2007-09-02
Abstract
Abstract A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).
Inventors
- 👤 Tetsuya Yagi
- 👤 Hitoshi Kagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:31
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/164; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H10; H10P; H10P52/00; H10P54/00; H01S5/0201; H01S5/0202; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/065; Y10S148/095
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
165 words
A method for manufacturing a semiconductor laser device comprising the steps of preparing a semiconductor substrate, forming an epitaxial separating layer on said semiconductor substrate, successively forming an epitaxial layer group on said epitaxial separating layer for performing laser oscillation therein in response to the externally applied voltage and for performing photoelectric conversion upon receipt of the laser light, separating said epitaxial layer group into two regions by partially removing said epitaxial layer group by etching, forming a pair of cantilever structure opposing to each other formed of said epitaxial layer group by selectively underetching said epitaxial separating layer, and forming a pair of cleavage planes of said epitaxial layer group by snapping off said pair of cantilever structure with pressure, wherein one of said pair of cleavage planes forms a laser resonator plane for outputting the laser light generated by said laser oscillation while the other cleavage plane forms a light receiving plane for receiving the laser light outputted from said laser resonator plane.
Claim 2
Independent Claim
165 words
A method for manufacturing a semiconductor laser device comprising the steps of preparing a semiconductor substrate, forming an epitaxial separating layer on said semiconductor substrate, successively forming an epitaxial layer group on said epitaxial separating layer for performing laser oscillation therein in response to the externally applied voltage and for performing photoelectric conversion upon receipt of the laser light, separating said epitaxial layer group into two regions by partially removing said epitaxial layer group by etching, forming a pair of cantilever structure opposing to each other formed of said epitaxial layer group by selectively underetching said epitaxial separating layer, and forming a pair of cleavage planes of said epitaxial layer group by snapping off said pair of cantilever structure with pressure, wherein one of said pair of cleavage planes forms a laser resonator plane for outputting the laser light generated by said laser oscillation while the other cleavage plane forms a light receiving plane for receiving the laser light outputted from said laser resonator plane.
Claim 3
Dependent Claim
57 words
A method for manufacturing a semiconductor laser device according to claim 1, wherein said epitaxial separating layer is formed of a material of AlAs system, said epitaxial layer group comprises a layer formed of a material of AlGaAs system, and said underetching of said epitaxial separating layer is carried out using an etchant of hydrofluoric acid system.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |