US4695332A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor laser CRT
Assignee: Nokia Bell Labs
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Filing: 1985-05-28
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Granted: 1987-09-22
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Expires: 2005-05-28
Abstract
Abstract Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.
Inventors
- 👤 Eugene I. Gordon
- 👤 Uri Levy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:30
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/20; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
124 words
A method of fabricating a target for an electron-beam-pumped semiconductor laser, comprising the steps of: providing a single crystal semiconductor body, epitaxially growing on the body a plurality of layers including: a thin, buffer layer of a relatively wide bandgap semiconductor on the body; a thicker, narrower bandgap active layer on the buffer layer; and a much thicker, wider bandgap cavity-length-adjusting layer on the active layer, forming on the cavity-length-adjusting layer a first mirror which is partially transmissive at the optical wavelength of the laser, affixing a transparent substrate to the first mirror, removing the single crystal substrate to expose the buffer layer, and forming on the buffer layer a second mirror, including a metal layer, which is highly reflecting at the optical wavelength.
Claim 2
Independent Claim
124 words
A method of fabricating a target for an electron-beam-pumped semiconductor laser, comprising the steps of: providing a single crystal semiconductor body, epitaxially growing on the body a plurality of layers including: a thin, buffer layer of a relatively wide bandgap semiconductor on the body; a thicker, narrower bandgap active layer on the buffer layer; and a much thicker, wider bandgap cavity-length-adjusting layer on the active layer, forming on the cavity-length-adjusting layer a first mirror which is partially transmissive at the optical wavelength of the laser, affixing a transparent substrate to the first mirror, removing the single crystal substrate to expose the buffer layer, and forming on the buffer layer a second mirror, including a metal layer, which is highly reflecting at the optical wavelength.
Claim 3
Dependent Claim
55 words
The method of claim 1 wherein said body comprises GaAs and said growing step comprises epitaxially growing Al x Ga 1-x As buffer layer, an Al y Ga 1-y As active layer, and an Al z Ga 1-z As adjusting layer so that y<x, z and each of said layers has the same conductivity type.
Claim 4
Dependent Claim
10 words
The method of claim 2 wherein said substrate comprises sapphire.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-21 | 1991-03-23 | 1991-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-21 | 1995-03-23 | 1995-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-21 | 1999-03-23 | 1999-09-22 | $7700.00 | Window Closed / Lapsed |