US4276098A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Batch processing of semiconductor devices
Assignee: AT&T Inc
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Filing: 1980-03-31
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Granted: 1981-06-30
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Expires: 2000-03-31
Abstract
Abstract Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal contact on the top surface is recessed within the periphery of an overlying mask, and the etching time is controlled so that the contact is not undercut by the sidewalls of the mesa. Another feature is the use of a self-limiting etchant which etches the mirrors smoothly and at a faster rate than the sidewalls. Preferably, the mirrors etch isotropically and the sidewalls etch preferentially along crystallographic planes. Also described is subsequent batch processing (e.g., forming mirror coatings) and on-wafer testing of the etched-mirror lasers.
Inventors
- 👤 Ronald J. Nelson
- 👤 Phillip D. Wright
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H01; H01S; H01S5/00; H01S5/02; H01S5/0201; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/695; H01S5/0014; H01S5/0042; H01S5/0203; H01S5/20; H01S5/2054; H01S5/2081; H01S5/2086; H01S5/30; H01S5/32; H01S5/3202; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
103 words
A method of fabricating mesa geometry devices from a semiconductor body comprising the steps of forming a plurality of metal layers on separate localized portions of a major surface of said body, forming an etch-resistant mask over each of said metal layers so that each of said metal layers is recessed within the periphery of its corresponding mask and other portions of said surface are exposed, subjecting said body to an etchant effective to attack said other portions of said surface thereby forming said mesas under said masks, and controlling the etching time so that said mesas do not undercut said metal layers.
Claim 2
Independent Claim
103 words
A method of fabricating mesa geometry devices from a semiconductor body comprising the steps of forming a plurality of metal layers on separate localized portions of a major surface of said body, forming an etch-resistant mask over each of said metal layers so that each of said metal layers is recessed within the periphery of its corresponding mask and other portions of said surface are exposed, subjecting said body to an etchant effective to attack said other portions of said surface thereby forming said mesas under said masks, and controlling the etching time so that said mesas do not undercut said metal layers.
Claim 3
Dependent Claim
21 words
The method of claim 1 including, after said subjecting step, the additional step of removing said masks from said metal layers.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein said mesas each have two pairs of opposing sidewalls and said etchant etches one of said pairs at a faster rate than the other of said pairs.
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein said etchant etches said one pair isotropically and said other pair preferentially along crystallographic planes.
Claim 6
Dependent Claim
34 words
The method of claim 4 wherein said body comprises a Group III-V compound, said major surface is a (100) crystallographic plane and said etchant etches said other pair of sidewalls preferentially along (111) planes.
Claim 7
Dependent Claim
28 words
The method of claim 5 including the additional step of forming a portion of said body by epitaxially growing a plurality of layers on a single crystal substrate.
Claim 8
Dependent Claim
46 words
The method of claim 6 wherein one of said layers comprises the active region of a semiconductor laser, and said subjecting step is effective to etch said one pair of sidewalls essentially perpendicular to said active layer, thereby forming a cavity resonator along the [011] direction.
Claim 9
Dependent Claim
24 words
The method of claim 7 wherein said growing step includes epitaxially growing layers of InP and InGaAsP, and wherein said active layer comprises InGaAsP.
Claim 10
Independent Claim
19 words
The method of claims 5, 6, 7 or 8 wherein said etchant comprises a solution of Br in methanol.
Claim 11
Dependent Claim
47 words
The method of claim 3 wherein said body includes layers of InP and InGaAsP and wherein said subjecting step comprises subjecting said InP layers to an etchant comprising HCl and said InGaAs layers to an etchant comprising H 2 SO 4 and H 2 O 2 .
Claim 12
Independent Claim
185 words
A method of fabricating a mesa geometry, etched-mirror semiconductor heterostructure junction laser comprising the steps of epitaxially growing a plurality of layers of InP and InGaAsP on a (100) oriented single crystal InP substrate, one of said InGaAsP layers forming the active region of said laser, forming a plurality of rectangular metal contact layers on separate localized portions of a major surface of the topmost of said epitaxial layers, forming a rectangular etch-resistant dielectric mask over each of said metal layers so that each of said metal layers is recessed within the periphery of its corresponding mask and other portions of said surface are exposed, subjecting said exposed surface portions to an etchant effective to form said mesa with two pairs of opposing sidewalls, one of said pairs, which form said mirrors, being etched at a much faster rate than the other of said pairs, and controlling the etching time so that said mesas do not undercut said metal layers, said one pair of sidewalls intersects said active region and are essentially perpendicular thereto, thereby forming a cavity resonator which extends along the [011] direction.
Claim 13
Independent Claim
185 words
A method of fabricating a mesa geometry, etched-mirror semiconductor heterostructure junction laser comprising the steps of epitaxially growing a plurality of layers of InP and InGaAsP on a (100) oriented single crystal InP substrate, one of said InGaAsP layers forming the active region of said laser, forming a plurality of rectangular metal contact layers on separate localized portions of a major surface of the topmost of said epitaxial layers, forming a rectangular etch-resistant dielectric mask over each of said metal layers so that each of said metal layers is recessed within the periphery of its corresponding mask and other portions of said surface are exposed, subjecting said exposed surface portions to an etchant effective to form said mesa with two pairs of opposing sidewalls, one of said pairs, which form said mirrors, being etched at a much faster rate than the other of said pairs, and controlling the etching time so that said mesas do not undercut said metal layers, said one pair of sidewalls intersects said active region and are essentially perpendicular thereto, thereby forming a cavity resonator which extends along the [011] direction.
Claim 14
Dependent Claim
37 words
The method of claim 11 wherein said subjecting step includes subjecting said exposed surface portions to an etchant which etches said one pair of sidewalls isotropically and said other pair of sidewalls preferentially along crystallographic (111) planes.
Claim 15
Dependent Claim
15 words
The method of claim 12 wherein said etchant comprises a solution of Br and methanol.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-29 | 1984-12-29 | 1985-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-29 | 1988-12-29 | 1989-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-29 | 1992-12-29 | 1993-06-30 | $7700.00 | Window Closed / Lapsed |