US3897627A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing semiconductor devices
Assignee: RCA Corp
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Filing: 1974-06-28
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Granted: 1975-08-05
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Expires: 1994-06-28
Abstract
Abstract A metal film is deposited on one side of a wafer of semiconductor material. A plurality of device regions are formed on the metal film by intersecting strips of a masking material. A layer of metal is plated on the metal film within each device region. The other side of the semiconductor wafer is selectively etched down to the metal film to form an array of semiconductor devices, each device being positioned within the boundaries of a corresponding device region. The devices are then separated from the array by fracturing the metal film along the strips of masking material.
Inventors
- 👤 Jerome Barnard Klatskin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:03
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D84/00; H10P; H10P50/00; H10P50/69; H10P50/691; H10W; H10W40/00; H10W40/10; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
126 words
A method of manufacturing semiconductor devices comprising the following steps; a. depositing a first metal film on one side of a wafer of semiconductor material having opposed sides; b. forming on said first metal film intersecting strips of a masking material to define device region boundaries; c. applying a metal layer to said first metal film within said boundaries of each device region; d. removing portions of the other side of said semiconductor wafer in order to form an array of semiconductor devices, each device being located within an area on said other side which is subtended by the boundaries of a corresponding device region; e. separating the devices from the array along the strips of masking material to obtain a plurality of individual semiconductor devices.
Claim 2
Independent Claim
126 words
A method of manufacturing semiconductor devices comprising the following steps; a. depositing a first metal film on one side of a wafer of semiconductor material having opposed sides; b. forming on said first metal film intersecting strips of a masking material to define device region boundaries; c. applying a metal layer to said first metal film within said boundaries of each device region; d. removing portions of the other side of said semiconductor wafer in order to form an array of semiconductor devices, each device being located within an area on said other side which is subtended by the boundaries of a corresponding device region; e. separating the devices from the array along the strips of masking material to obtain a plurality of individual semiconductor devices.
Claim 3
Dependent Claim
70 words
A method in accordance with claim 1 wherein said device region boundaries are defined by: a. applying a layer of photosensitive material on the first metal film; b. exposing the photosensitive material to a source of electromagnetic radiation having a substantially rectangular grid pattern; c. removing the unexposed portions of the photosensitive material leaving the first metal film having a plurality of strips thereon which intersect at substantially right angles.
Claim 4
Dependent Claim
99 words
A method in accordance with claim 2 in which the array of semiconductor devices is formed by: a. depositing a second metal film on the other side of the semiconductor wafer; b. etching away the second metal film leaving an array of metallic dots, each dot being located within an area on said second metal film which is coterminous with the boundaries of a corresponding device region; c. etching away the semiconductor material from around the metallic dots down to the first metal film, leaving an array of mesa-like structures of semiconductor material formed on the first metal film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-04 | 1979-02-03 | 1979-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-04 | 1983-02-03 | 1983-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-04 | 1987-02-03 | 1987-08-05 | $7700.00 | Window Closed / Lapsed |