Method of fabricating semiconductor devices to facilitate early electrical testing

Claim 1

A method of fabricating finished semi-conductive devices from a semiconductor wafer having an internal junction, comprising: a. depositing a metallic support layer on one surface of the wafer, b. selectively coating one opposite surface of the wafer through a mask in a waffle pattern with a material impervious to cutting and etching chemicals subsequently to be employed, said coating being applied over the areas from which semiconductive devices are to be fabricated, c. chemically cutting grooves through the thickness of the wafer and down to the metallic layer in those areas that were not selectively coated, thereby forming islands of semiconductor devices supported on the metallic layer and separated by intersecting lines of grooves, d. filling the grooves between the islands with a protective substance to cover the exposed junctions in the sides of the devices by placing a mask having holes opposite each groove line intersection over the semiconductor device and applying pressure to the protective substance to force it through the holes into the grooves, and e. mechanically cutting down the middle of the grooves through the protective substance and the metallic layer to separate the semiconductive devices from each other.

Claim 2

A method of fabricating finished semi-conductive devices from a semiconductor wafer having an internal junction, comprising: a. depositing a metallic support layer on one surface of the wafer, b. selectively coating one opposite surface of the wafer through a mask in a waffle pattern with a material impervious to cutting and etching chemicals subsequently to be employed, said coating being applied over the areas from which semiconductive devices are to be fabricated, c. chemically cutting grooves through the thickness of the wafer and down to the metallic layer in those areas that were not selectively coated, thereby forming islands of semiconductor devices supported on the metallic layer and separated by intersecting lines of grooves, d. filling the grooves between the islands with a protective substance to cover the exposed junctions in the sides of the devices by placing a mask having holes opposite each groove line intersection over the semiconductor device and applying pressure to the protective substance to force it through the holes into the grooves, and e. mechanically cutting down the middle of the grooves through the protective substance and the metallic layer to separate the semiconductive devices from each other.