Method of making metal semiconductor diodes having plated heat sink members
Abstract
Abstract A SIGNIFICANT IMPROVEMENT IN THE HEAT FLOW RESISTANCE OF MICROWAVE DIODES MAY BE ACHIEVED BY PLATING A HEAT SINK TO THE METAL LAYER OF A SCHOTTKY BARRIER STRUCTURE. A SEMICONDUCTOR SUBSTRATE HAS AN EPITAXIAL LAYER GROWN THEREON IN ACCORDANCE WITH STANDARD EPITAXIAL PROCEDURES. THE SCHOTTKY BARRIER IS THEN FABRICATED BY PROPERLY PREPARING THE SURFACE OF THE EPITAXIAL LAYER AND THEN EVAPORATIVELY DEPOSITING A LAYER OF METAL AT A TEMPERATURE SUCH THAT THE METAL NUCLEATES TO FORM A VERY THIN FILM TO PRODUCE A RECTIFYING CONTACT WITH THE EPITAXIAL LAYER. A HEAT SINK MATERIAL IS THEN PLATED ONTO THE METAL FILM OF THE RECTIFYING CONTACT TO A THICKNESS SUFFICIENT TO INSURE HEAT CONDUCTION AWAY FROM THE SCHOTTKY BARRIER. TYPICALLY, THE HEAT SINK MAY BE PLATED COPPER.
Inventors
- 👤 R Haitz
Bibliographic Details
Claims Analysis
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