Patent US4756927A successfully refreshed from Google Patents.
US4756927A
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Method and apparatus for refractory metal deposition
Assignee: Massachusetts Institute of Technology
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Filing: 1986-05-29
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Granted: 1988-07-12
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Expires: 2006-05-29
Abstract
Abstract A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF 6 , MoF 6 or TiCl 4 with SiH 4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.
Inventors
- 👤 Jerry G. Black
- 👤 Daniel J. Ehrlich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:41
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/06; C23C16/08; C23C16/22; C23C16/30; C23C16/42; C23C16/44; C23C16/48; C23C16/483; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/064; H10W20/066; H10W20/067; H10W20/068
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
179 words
The method of forming a refractory metal pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of two reactants and an inert gas into said chamber wherein the reactants comprise: (i) a refractory metal gaseous (RMG) compound, and a (ii) silicon (Si) or germanium (Ge) atom containing gaseous compound, and (iii) wherein the metal for the RMG compound is taken from the class comprising: W, Mo, Ti; (iv) the ratio by volume of RMG compound to Si or Ge containing gaseous compound is between about 1:1 and 20:1; and (b) subjecting said mixture to laser irradiation using a level of laser irradiation power directed toward said substrate and sufficient to initiate a localized reaction between the two reactants; with the Si or Ge compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of said refractory metal and wherein the temperature at which the reaction occurs and the refractory metal pattern is formed is below about 475° C.
Claim 2
Independent Claim
179 words
The method of forming a refractory metal pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of two reactants and an inert gas into said chamber wherein the reactants comprise: (i) a refractory metal gaseous (RMG) compound, and a (ii) silicon (Si) or germanium (Ge) atom containing gaseous compound, and (iii) wherein the metal for the RMG compound is taken from the class comprising: W, Mo, Ti; (iv) the ratio by volume of RMG compound to Si or Ge containing gaseous compound is between about 1:1 and 20:1; and (b) subjecting said mixture to laser irradiation using a level of laser irradiation power directed toward said substrate and sufficient to initiate a localized reaction between the two reactants; with the Si or Ge compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of said refractory metal and wherein the temperature at which the reaction occurs and the refractory metal pattern is formed is below about 475° C.
Claim 3
Dependent Claim
19 words
The process of claim 1 wherein the substrate has an exposed polyimide surface upon which the pattern is formed.
Claim 4
Dependent Claim
134 words
The process of repairing interconnection defects in a substrate comprising the steps of: (a) forming a stress relieving protective layer on said substrate; (b) forming openings in the protective layer to points on the substrate which should be interconnected to repair the defect; (c) depositing a refractory metal in said openings and on said protective layer by low temperature pyrolysis at a temperature below 500° C. of a mixture of a flowing inert gas and a refractory metal gaseous compound and a silicon or germanium containing gaseous compound in a ratio by volume by greater than 1:1 refractory metal gaseous compound to silicon or germanium gaseous compound using a low power laser beam directed at the substrate to initiate and direct a localized reaction of said mixture to produce a refractory metal interconnection pattern.
Claim 5
Dependent Claim
134 words
The process of repairing interconnection defects in a substrate comprising the steps of: (a) forming a stress relieving protective layer on said substrate; (b) forming openings in the protective layer to points on the substrate which should be interconnected to repair the defect; (c) depositing a refractory metal in said openings and on said protective layer by low temperature pyrolysis at a temperature below 500° C. of a mixture of a flowing inert gas and a refractory metal gaseous compound and a silicon or germanium containing gaseous compound in a ratio by volume by greater than 1:1 refractory metal gaseous compound to silicon or germanium gaseous compound using a low power laser beam directed at the substrate to initiate and direct a localized reaction of said mixture to produce a refractory metal interconnection pattern.
Claim 6
Dependent Claim
22 words
The process of claim 3 wherein the substrate is a multi-chip or hybrid carrier comprised of glass, semiconductor, ceramic or epoxy material.
Claim 7
Independent Claim
118 words
The method of forming a pattern of tungsten on a substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of WF 6 and SiH 4 and an inert gas; and (b) subjecting said mixture to laser irradiation using a level of laser irradiation power sufficient to initiate a localized reaction between the WF 6 and SiH 4 with the SiH 4 providing a catalyst to sustain the localized reaction, resulting in the desired pattern of low resistivity metal tungsten being formed on said substrate and wherein the ratio of WF 6 to SiH 4 is at least 1:1 or higher by volume and the reaction occurs at temperatures below 500° C.
Claim 8
Independent Claim
118 words
The method of forming a pattern of tungsten on a substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of WF 6 and SiH 4 and an inert gas; and (b) subjecting said mixture to laser irradiation using a level of laser irradiation power sufficient to initiate a localized reaction between the WF 6 and SiH 4 with the SiH 4 providing a catalyst to sustain the localized reaction, resulting in the desired pattern of low resistivity metal tungsten being formed on said substrate and wherein the ratio of WF 6 to SiH 4 is at least 1:1 or higher by volume and the reaction occurs at temperatures below 500° C.
Claim 9
Dependent Claim
12 words
The process of claim 3 wherein the protective layer comprises a polyimide.
Claim 10
Dependent Claim
22 words
The method of claim 5 wherein the ratio by volume of WF 6 to SiH 4 is between about 1:1 and 20:1.
Claim 11
Dependent Claim
107 words
The process of providing interconnections for regions formed in a substrate comprising the steps of: (a) forming a polyimide layer on said substrate; (b) forming openings to regions of the substrate to be interconnected; (c) depositing a refractory metal in said openings and on said polyimide layer by low temperature pyrolysis at a temperature below 500° C. of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low power laser beam directed at the substrate to initiate and direct a localized reaction of said mixture to produce a non-silicide, refractory metal interconnection pattern.
Claim 12
Dependent Claim
107 words
The process of providing interconnections for regions formed in a substrate comprising the steps of: (a) forming a polyimide layer on said substrate; (b) forming openings to regions of the substrate to be interconnected; (c) depositing a refractory metal in said openings and on said polyimide layer by low temperature pyrolysis at a temperature below 500° C. of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low power laser beam directed at the substrate to initiate and direct a localized reaction of said mixture to produce a non-silicide, refractory metal interconnection pattern.
Claim 13
Independent Claim
173 words
The method of forming a refractory metal pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of two reactants and an inert gas wherein the reactants comprise: (i) a refractory metal gaseous compound, and a (ii) a silicon or germanium atom containing gaseous compound, and (iii) wherein the refractory metal gaseous compound is taken from the class comprising: W, Mo, Ti fluorides or chlorides; and (iv) the ratio by volume of the silicon or germanium compound compared to the refractory metal compound is 1:1 or less; and (b) imparting sufficient light energy to the reactants from a beam of light directed at the substrate surface upon which the metal pattern is to be formed to initiate a localized reaction between the two reactants; with the Si or Ge atom containing gaseous compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of a refractory metal pattern at a temperature below 500° C.
Claim 14
Independent Claim
173 words
The method of forming a refractory metal pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of two reactants and an inert gas wherein the reactants comprise: (i) a refractory metal gaseous compound, and a (ii) a silicon or germanium atom containing gaseous compound, and (iii) wherein the refractory metal gaseous compound is taken from the class comprising: W, Mo, Ti fluorides or chlorides; and (iv) the ratio by volume of the silicon or germanium compound compared to the refractory metal compound is 1:1 or less; and (b) imparting sufficient light energy to the reactants from a beam of light directed at the substrate surface upon which the metal pattern is to be formed to initiate a localized reaction between the two reactants; with the Si or Ge atom containing gaseous compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of a refractory metal pattern at a temperature below 500° C.
Claim 15
Dependent Claim
19 words
The process of claim 9 wherein the substrate has an exposed polyimide surface upon which the pattern is formed.
Claim 16
Dependent Claim
52 words
The process of claim 9 wherein the energy is imparted by a laser and the refractory metal gaseous compound is a metal fluoride or chloride compound containing a metal from the class of W, Mo or Ti and the pressure in the chamber during the reaction is in excess of 100 Torr.
Claim 17
Dependent Claim
120 words
The process of repairing interconnection defects by forming an interconnection metal pattern on a substrate comprising the steps of: (a) forming a stress relieving protective layer on said substrate; (b) forming openings in the protective layer to regions on a substrate which should be interconnected to repair the defect; (c) depositing a low resistivity refractory metal in said openings and on said protective layer by localized low temperature pyrolysis at a temperature below 500° C. of a mixture of a flowing inert gas and a refractory metal gaseous compound and a semiconductor containing gaseous compound using low power laser energy directed at the substrate surface upon which the pattern is to be formed to initiate and direct the interconnection pattern.
Claim 18
Dependent Claim
120 words
The process of repairing interconnection defects by forming an interconnection metal pattern on a substrate comprising the steps of: (a) forming a stress relieving protective layer on said substrate; (b) forming openings in the protective layer to regions on a substrate which should be interconnected to repair the defect; (c) depositing a low resistivity refractory metal in said openings and on said protective layer by localized low temperature pyrolysis at a temperature below 500° C. of a mixture of a flowing inert gas and a refractory metal gaseous compound and a semiconductor containing gaseous compound using low power laser energy directed at the substrate surface upon which the pattern is to be formed to initiate and direct the interconnection pattern.
Claim 19
Dependent Claim
22 words
The process of claim 12 wherein the sbustrate is a multi-chip or hybrid carrier comprised of glass, semiconductor, ceramic or epoxy material.
Claim 20
Dependent Claim
14 words
The process of claim 12 wherein the protective layer is comprised of a polyimide.
Claim 21
Independent Claim
115 words
The method of forming a pattern of tungsten on a substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of WF 6 and SiH 4 having a ratio by volume of WF 6 to SiH 4 which is equal to or greater than about 1:1 and an inert gas; and (b) subjecting said mixture to sufficient power from a laser beam directed at the substrate to initiate a localized reaction at a temperature below 500° C. between the WF 6 and SiH 4 , with the SiH 4 providing a catalyst to sustain the reaction, resulting in the desired metal pattern of tungsten being formed on said substrate.
Claim 22
Independent Claim
115 words
The method of forming a pattern of tungsten on a substrate located within a reaction chamber comprising the steps of: (a) introducing a flowing gas mixture of WF 6 and SiH 4 having a ratio by volume of WF 6 to SiH 4 which is equal to or greater than about 1:1 and an inert gas; and (b) subjecting said mixture to sufficient power from a laser beam directed at the substrate to initiate a localized reaction at a temperature below 500° C. between the WF 6 and SiH 4 , with the SiH 4 providing a catalyst to sustain the reaction, resulting in the desired metal pattern of tungsten being formed on said substrate.
Claim 23
Dependent Claim
20 words
The method of claim 15 wherein the resistivity of the metallic pattern of W is about 150 micro-ohm-cm or less.
Claim 24
Dependent Claim
89 words
The process of providing interconnections for regions formed in a substrate comprising the steps of: (a) forming a polyimide layer on said substrate; (b) forming openings to the substrate to regions to be interconnected; (c) depositing a refractory metal in said openings and on said polyimide by localized low temperature pyrolysis at a temperature below 500° C. of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low energy laser pulse directed at the interconnections.
Claim 25
Dependent Claim
89 words
The process of providing interconnections for regions formed in a substrate comprising the steps of: (a) forming a polyimide layer on said substrate; (b) forming openings to the substrate to regions to be interconnected; (c) depositing a refractory metal in said openings and on said polyimide by localized low temperature pyrolysis at a temperature below 500° C. of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low energy laser pulse directed at the interconnections.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-12 | 1992-01-11 | 1992-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-12 | 1996-01-11 | 1996-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-12 | 2000-01-11 | 2000-07-12 | $7700.00 | Window Closed / Lapsed |