US4756895A
Expired / Lapsed
US
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Hexagonal silicon carbide platelets and preforms and methods for making and using same
Assignee: Stemcor Corp
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Filing: 1986-08-22
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Granted: 1988-07-12
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Expires: 2006-08-22
Abstract
Abstract Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100 DEG C. to 2500 DEG C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.
Inventors
- 👤 Wolfgang D. G. Boecker
- 👤 Stephen Chwastiak
- 👤 Tadeusz M. Korzekwa
- 👤 Sai-Kwing Lau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:26
CPC Classifications
C; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; B; B82; B82Y; B82Y30/00; C01B32/963; C01B32/97; C01B32/984; C04; C04B; C04B35/00; C04B35/01; C04B35/10; C04B35/111; C04B35/117; C04B35/515; C04B35/56; C04B35/565; C04B35/573; C04B35/622; C04B35/62204; C04B35/62213; C04B35/626; C04B35/62605; C04B35/6261; C04B35/64; C04B35/645; C04B35/71; C04B35/78; C04B35/80; C04B38/00; C04B38/007; C04B38/0074; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/51; C04B41/515; C04B41/5155; C04B41/80; C04B41/81; C04B41/85; C04B41/88; C22; C22C; C22C1/00; C22C1/10; C22C1/1036; C22C1/1073; C22C29/00; C22C29/02; C22C29/06; C22C29/065; C30; C30B; C30B25/00; C30B29/00; C30B29/60; C01P; C01P2004/00; C01P2004/01; C01P2004/03; C01P2004/20; C01P2004/22; C01P2004/54; C01P2004/60; C01P2004/61; C01P2004/62; C01P2004/64; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/32; C04B2235/3205; C04B2235/3206; C04B2235/3217; C04B2235/34; C04B2235/3418; C04B2235/38; C04B2235/3817; C04B2235/3821; C04B2235/3826; C04B2235/3834; C04B2235/42; C04B2235/421; C04B2235/422; C04B2235/50; C04B2235/52; C04B2235/5292; C04B2235/5296; C04B2235/54; C04B2235/5418; C04B2235/5436; C04B2235/5445; C04B2235/60; C04B2235/608; C04B2235/70; C04B2235/72; C04B2235/74; C04B2235/76; C04B2235/767; C04B2235/77
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
150 words
A method of producing a silicon carbide product which is at least 95% pure alpha silicon carbide which product comprises at least 1000 alpha silicon carbide crystals, at least 90 weight percent of the crystals being formed from hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns and wherein those crystals having at least two adjacent 120° C. corners, have a distance of from 2.5 to 150 microns between said corners, said method comprising heating a porous silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100° C. to 2500° C. in the presence of a hexagonal crystal growth control additive and in a non-reactive atmosphere, for a time sufficient to cause formation of said crystals.
Claim 2
Independent Claim
150 words
A method of producing a silicon carbide product which is at least 95% pure alpha silicon carbide which product comprises at least 1000 alpha silicon carbide crystals, at least 90 weight percent of the crystals being formed from hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns and wherein those crystals having at least two adjacent 120° C. corners, have a distance of from 2.5 to 150 microns between said corners, said method comprising heating a porous silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100° C. to 2500° C. in the presence of a hexagonal crystal growth control additive and in a non-reactive atmosphere, for a time sufficient to cause formation of said crystals.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the hexagonal crystal growth control additive is selected from boron, aluminum, and mixtures thereof.
Claim 4
Dependent Claim
31 words
The method of claim 2 wherein the growth control additive is present in an amount of from about 0.3 to about 5 percent by weight of silicon in the precursor composition.
Claim 5
Dependent Claim
29 words
The method of claim 3 wherein the growth control additive is present in an amount of from 1 to 3.5 percent by weight of silicon in the precursor composition.
Claim 6
Dependent Claim
25 words
The method of claim 3 wherein the precursor composition is beta silicon carbide powder having an average particle size of between 0.1 and 2 microns.
Claim 7
Dependent Claim
32 words
The method of claim 3 wherein the precursor composition is an intimate mixture of from about 58 to about 66 weight percent silica with from about 34 to 42 weight percent carbon.
Claim 8
Dependent Claim
61 words
The method of claim 6 wherein the mixture contains from about 60 to about 65 weight percent silica and from about 35 to about 40 weight percent carbon wherein said silica has an average particle size of from about 0.005 to about 100 microns and said carbon has an average particle size of from about 0.01 micron to about 1 micron.
Claim 9
Dependent Claim
26 words
The method of claim 3 wherein the precursor comprises a mixture of submicron silicon and carbon in a weight ration of 70% silicon and 30% carbon.
Claim 10
Dependent Claim
32 words
The method of claim 1 wherein the precursor is a porous agglomerate and the resulting silicon carbide product is a porous structure comprising intergrown silicon carbide crystals having a hexagonal crystal lattice.
Claim 11
Dependent Claim
37 words
The method of claim 1 wherein the precursor is a loose powder and the resulting silicon carbide product is in the form of separate particles and at least 70 weight percent of the particles are single crystals.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the precursor has a porosity of between 30 and 90 volume percent.
Claim 13
Dependent Claim
19 words
The method of claim 11 wherein the average pore diameter in the precursor is between 1 and 100 microns.
Claim 14
Dependent Claim
27 words
The method of claim 3 wherein the growth control additive is in the vapor phase and the heating time is from about 3 minutes to 24 hours.
Claim 15
Dependent Claim
27 words
The method of claim 9 wherein the growth control additive is in the vapor phase and the heating time is from about 5 minutes to 24 hours.
Claim 16
Dependent Claim
27 words
The method of claim 10 wherein the growth control additive is in the vapor phase and the heating time is from about 3 minutes to 24 hours.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-12 | 1992-01-11 | 1992-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-12 | 1996-01-11 | 1996-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-12 | 2000-01-11 | 2000-07-12 | $7700.00 | Window Closed / Lapsed |