Photodetector and amplifier integration

Claim 1

A semiconductor device comprising at least one PINFET structure, said PINFET structure comprising: a. first region comprising n-type III-V semiconductor compound; b. second epitaxial region comprising intrinsic III-V semiconductor compound, said second epitaxial layer contacting at least a portion of the first region; c. third epitaxial region comprising III-V semiconductor compound, said third epitaxial region contacting at least a portion of the second epitaxial region; d. a JFET portion of the PINFET structure comprising fourth epitaxial region comprising III-V semiconductor compound with n-type conductivity, said fourth epitaxial region contacting at least a portion of the third epitaxial region; e. fifth epitaxial region comprising III-V semiconductor compound with p-type conductivity and contacting at least a portion of the fourth epitaxial region, said fifth epitaxial region having a length; f. source and drain electrodes, said source and drain electrodes contacting said fourth epitaxial region; g. gate electrode contacting said fifth epitaxial region and having a length, the length and position of the gate electrode relative to the fifth epitaxial region being such that it overhangs the fifth epitaxial region; h. a PIN portion of the PINFET structure comprising a sixth epitaxial region comprising III-V semiconductor compound with n-type conductivity, said sixth epitaxial region contacting at least a portion of the third epitaxial region but not contacting the fourth or fifth epitaxial regions; i. seventh epitaxial region comprising III-V semiconductor compound with p-type conductivity contacting at least a portion of the sixth epitaxial region but not contacting the fourth or fifth epitaxial regions; j. a p-contact comprising conductive material contacting at least a portion of a highly doped p-type region that extends from under the p-contact through the seventh epitaxial region, through the sixth epitaxial region and partially into the portion of the third epitaxial region under the p-contact; k. means for electrically connecting the p-contact to the gate electrode characterized in that the third epitaxial region comprises p-type III-V semiconductor compounds; and a back gate electrode is contacted to the third epitaxial layer.