US4297720A
Expired / Lapsed
US
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Multi-photodiodes
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1979-07-19
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Granted: 1981-10-27
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Expires: 1999-07-19
Abstract
Abstract The present invention provides monolithic-structure type photodiodes in which the first photodiode is sensitive to an optical signal having one wavelength and the second photodiode is sensitive to another optical signal having a different wavelength, and in which the first and second photodiodes are superimposed together with an optical filter layer interposed between them which separates a multiplex optical signal into the first and second wavelength signals. Owing to their monolithic structure, the photodiodes of the present invention are extremely useful for receiving multiplex optical signals having a plurality of different wavelengths.
Inventors
- 👤 Hideaki Nishizawa
- 👤 Shin-ichi Iguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:56
CPC Classifications
H; H10; H10W; H10W90/00; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
101 words
Multi-photodiodes comprising a first photodiode, having a photo-sensitive region with a forbidden band-gap E 1 , and a second photodiode, having a photo-sensitive region with a forbidden band-gap E 2 , each photodiode consisting of p-n structures or p-i-n structures of semiconductor compounds, said first and second photodiodes integrated into one body with an intermediate connecting semiconductor compound layer of at least one of said photodiodes providing a filter layer having a forbidden band-gap E 3 , said forbidden band-gaps E 1 , E 2 , and E 3 being under the condition of E 1 <E 3 <E 2 .
Claim 2
Dependent Claim
101 words
Multi-photodiodes comprising a first photodiode, having a photo-sensitive region with a forbidden band-gap E 1 , and a second photodiode, having a photo-sensitive region with a forbidden band-gap E 2 , each photodiode consisting of p-n structures or p-i-n structures of semiconductor compounds, said first and second photodiodes integrated into one body with an intermediate connecting semiconductor compound layer of at least one of said photodiodes providing a filter layer having a forbidden band-gap E 3 , said forbidden band-gaps E 1 , E 2 , and E 3 being under the condition of E 1 <E 3 <E 2 .
Claim 3
Dependent Claim
15 words
Multi-photodiodes as claimed in claim 1 in which the first and second photodiodes have hetero-structure.
Claim 4
Dependent Claim
24 words
Multi-photodiodes as claimed in claim 1 or 2 in which the semiconductor compounds are In 1-x Ga x As y P 1-y (0≦x≦1, 0≦y≦1).
Claim 5
Dependent Claim
20 words
Multi-photodiodes as claimed in claim 1 or 2 in which the semiconductor compounds are Al x Ga 1-x As (0≦x≦1).
Claim 6
Dependent Claim
23 words
Multi-photodiodes as claimed in claim 1 or 2 in which each layer composing said photodiodes is grown by the liquid-phase epitaxial growth technique.
References Cited (Backward Citations)
US4179702A
Cited
US4213138A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-26 | 1985-04-27 | 1985-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-26 | 1989-04-27 | 1989-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-26 | 1993-04-27 | 1993-10-27 | $7700.00 | Window Closed / Lapsed |