Patent US4745304A successfully refreshed from Google Patents.
US4745304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature compensation for ECL circuits
Assignee: RPX Corp
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Filing: 1985-05-03
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Granted: 1988-05-17
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Expires: 2005-05-03
Abstract
Abstract An ECL circuit comprising an output transistor having a high output voltage VOH guard band and a low output voltage VOL guard band with a temperature compensating network coupled to the output transistor for causing the high level output voltage VOH and low level output voltage VOL of the output transistor to remain within the maximum and minimum limits of the VOH and VOL guard bands over a wide temperature range.
Inventors
- 👤 Stanley Wilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:51
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/082; H03K19/086; H03K19/003; H03K19/00369; H03K19/00376
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
203 words
A temperature compensating bias means for an ECL circuit comprising: a first transistor having a base; a bias resistor coupled to the base of said first transistor; a bias transistor having a collector coupled to said base of said first transistor and said bias resistor, said bias transistor having a base and an emitter; and means including a Schottky diode having a negative temperature coefficient coupled between a source of potential V CS and said base of said bias transistor for providing a bias potential V x on said base of said bias transistor which is a function of V.sub.S +V.sub.BE -V.sub.SD where V S is a constant potential, V BE is the base-to-emitter potential on said bias transistor and V SD is the voltage drop across said Schottky diode, said bias potential V x providing an emitter potential V E on the emitter of said bias transistor which is a function of V.sub.x -V.sub.BE =V.sub.S -V.sub.SD for controlling current flow through said bias resistor such that a change in the potential on said base of said first transistor due to a change in the operating temperature of said ECL circuit is solely a function of the temperature coefficient of said Schottky diode.
Claim 2
Dependent Claim
203 words
A temperature compensating bias means for an ECL circuit comprising: a first transistor having a base; a bias resistor coupled to the base of said first transistor; a bias transistor having a collector coupled to said base of said first transistor and said bias resistor, said bias transistor having a base and an emitter; and means including a Schottky diode having a negative temperature coefficient coupled between a source of potential V CS and said base of said bias transistor for providing a bias potential V x on said base of said bias transistor which is a function of V.sub.S +V.sub.BE -V.sub.SD where V S is a constant potential, V BE is the base-to-emitter potential on said bias transistor and V SD is the voltage drop across said Schottky diode, said bias potential V x providing an emitter potential V E on the emitter of said bias transistor which is a function of V.sub.x -V.sub.BE =V.sub.S -V.sub.SD for controlling current flow through said bias resistor such that a change in the potential on said base of said first transistor due to a change in the operating temperature of said ECL circuit is solely a function of the temperature coefficient of said Schottky diode.
Claim 3
Dependent Claim
52 words
An ECL circuit according to claim 1 comprising: a first resistance for coupling said emitter of said bias transistor to a source of potential V EE ; and a second resistance means for coupling said Schottky diode and said base of said bias transistor to said source of potential V EE .
Claim 4
Dependent Claim
33 words
An ECL circuit according to claim 2 wherein said first resistance means comprises approximately 500 ohms, said second resistance means comprises approximately 20K ohms and said potential V EE comprises approximately -5.0 volts.
Claim 5
Dependent Claim
241 words
A temperature compensating bias means for an ECL circuit comprising: a bias resistor coupled to the base of a first transistor; a bias transistor having a collector coupled to said base of said first transistor and said bias resistor, said bias transistor having a base and an emitter; means including a Schottky diode having a negative temperature coefficient coupled between a source of potential V CS and said base of said bias transistor for providing a bias potential V x on said base of said bias transistor which is a function of V.sub.S +V.sub.BE -V.sub.SD where V S is a constant potential, V BE is the base-to-emitter potential on said bias transistor and V SD is the voltage drop across said Schottky diode, said bias potential V x providing an emitter potential V E on the emitter of said bias transistor which is a function of V.sub.x -V.sub.BE =V.sub.S -V.sub.SD for controlling current flow through said bias resistor such that a change in the potential on said base of said first transistor due to a change in the operating temperature of said ECL circuit is solely a function of the temperature coefficient of said Schottky diode; a first resistance means for coupling said emitter of said bias transistor to a source of potentially V EE ; and a second resistance means for coupling said Schottky diode and said base of said bias transistor to said source of potential V EE .
Claim 6
Dependent Claim
241 words
A temperature compensating bias means for an ECL circuit comprising: a bias resistor coupled to the base of a first transistor; a bias transistor having a collector coupled to said base of said first transistor and said bias resistor, said bias transistor having a base and an emitter; means including a Schottky diode having a negative temperature coefficient coupled between a source of potential V CS and said base of said bias transistor for providing a bias potential V x on said base of said bias transistor which is a function of V.sub.S +V.sub.BE -V.sub.SD where V S is a constant potential, V BE is the base-to-emitter potential on said bias transistor and V SD is the voltage drop across said Schottky diode, said bias potential V x providing an emitter potential V E on the emitter of said bias transistor which is a function of V.sub.x -V.sub.BE =V.sub.S -V.sub.SD for controlling current flow through said bias resistor such that a change in the potential on said base of said first transistor due to a change in the operating temperature of said ECL circuit is solely a function of the temperature coefficient of said Schottky diode; a first resistance means for coupling said emitter of said bias transistor to a source of potentially V EE ; and a second resistance means for coupling said Schottky diode and said base of said bias transistor to said source of potential V EE .
Claim 7
Dependent Claim
33 words
An ECL circuit according to claim 4 wherein said first resistance means comprises approximately 500 ohms, said second resistance means comprises approximately 20K ohms and said potential V EE comprises approximately -5.0 volts.
References Cited (Backward Citations)
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