Abstract A semiconductor integrated circuit device including: a first transistor whose base receives an input signal, and whose collector is connected to a high power supply voltage; a second transistor whose base is conducted to the emitter of said first transistor and whose emitter is connected to a low power supply voltage; a third transistor whose base is connected to the collector of said first transistor, whose collector is connected to said high power supply voltage, and whose emitter is connected to the collector of said second transistor directly or via a load element; and a fourth transistor whose base is connected to the emitter of said third transistor, whose emitter is connected to said low power supply voltage, and from whose collector an output signal of said semiconductor integrated circuit device is taken out.
A semiconductor integrated circuit device comprising: a first transistor whose base receives an input signal, and whose collector is connected to a high power supply voltage; a second transistor whose base is connected to the emitter of said first transistor and whose emitter is connected to a low power supply voltage; a third transistor whose base is connected to the collector of said first transistor, whose collector is connected to said high power supply voltage, and whose emitter is operatively connected to the collector of said second transistor; a fourth transistor whose base is connected to the emitter of said third transistor, whose emitter is connected to said low power supply voltage, and from whose collector an output signal of said semiconductor integrated circuit device is taken out; and a load element forming the operative interconnection between the emitter of said third transistor and the collector of said second transistor, wherein said load element is a Schottky barrier diode whose anode is connected to the base of said fourth transistor, and whose cathode is connected to the collector of said second transistor.
Claim 2
Dependent Claim
182 words
A semiconductor integrated circuit device comprising: a first transistor whose base receives an input signal, and whose collector is connected to a high power supply voltage; a second transistor whose base is connected to the emitter of said first transistor and whose emitter is connected to a low power supply voltage; a third transistor whose base is connected to the collector of said first transistor, whose collector is connected to said high power supply voltage, and whose emitter is operatively connected to the collector of said second transistor; a fourth transistor whose base is connected to the emitter of said third transistor, whose emitter is connected to said low power supply voltage, and from whose collector an output signal of said semiconductor integrated circuit device is taken out; and a load element forming the operative interconnection between the emitter of said third transistor and the collector of said second transistor, wherein said load element is a Schottky barrier diode whose anode is connected to the base of said fourth transistor, and whose cathode is connected to the collector of said second transistor.