Abstract A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extremely low impurity content of the vapor-deposited dopant source in comparison with conventional sintered bodies, which unavoidably contain impurities originating in the powder of the dopant compound for sintering and the binder to facilitate sintering, the semiconductor substrate doped using the inventive dopant source has outstandingly low densities of lattice defects and dislocations in addition to the absence of troubles in the diffusion process due to melting of the binder contained in the sintered dopant sources.
In a method of doping a semiconductor substrate to impart p-type conductivity thereto by the solid diffusion method in which solid boron nitride as a p-type source and a semiconductor substrate are heated together in a container and the semiconductor substrate doped by the boron nitride, the improvement wherein the boron nitride is a solid body of which at least the surface layer is formed by the pyrolytic chemical deposition of boron nitride.
Claim 2
Dependent Claim
73 words
In a method of doping a semiconductor substrate to impart p-type conductivity thereto by the solid diffusion method in which solid boron nitride as a p-type source and a semiconductor substrate are heated together in a container and the semiconductor substrate doped by the boron nitride, the improvement wherein the boron nitride is a solid body of which at least the surface layer is formed by the pyrolytic chemical deposition of boron nitride.