US3243373A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of doping semiconductor material, particularly silicon, with boron
Assignee: Siemens Schuckertwerke AG
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Filing: 1962-05-04
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Granted: 1966-03-29
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Expires: 1982-05-04
Abstract
No abstract record available.
Inventors
- 👤 Reuschel Konrad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:59
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/10; H05K3/18; C; C30; C30B; C30B13/00; C30B13/08; C30B13/10; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
51 words
A METHOD FOR PRODUCING A ROD OF LOW-OHMIC SEMICONDUCTOR MATERIAL, HAVING A PREDETERMINED CONDUCTANCE OBTAINED BY CONTROLLED DOPING, WHICH COMPRISES ATTACHING BORON GRANULES HAVING A GRAIN SIZE OF 5 TO 500 MICRONS ONTO AND ALONG A ROD-SHAPED BODY OF THE SEMICONDUCTOR MATERIAL, AND THEREAFTER SUBJECTING THE SEMICONDUCTOR BODY TO ZONE MELTING.
Claim 2
Independent Claim
51 words
A METHOD FOR PRODUCING A ROD OF LOW-OHMIC SEMICONDUCTOR MATERIAL, HAVING A PREDETERMINED CONDUCTANCE OBTAINED BY CONTROLLED DOPING, WHICH COMPRISES ATTACHING BORON GRANULES HAVING A GRAIN SIZE OF 5 TO 500 MICRONS ONTO AND ALONG A ROD-SHAPED BODY OF THE SEMICONDUCTOR MATERIAL, AND THEREAFTER SUBJECTING THE SEMICONDUCTOR BODY TO ZONE MELTING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-03-28 | 1969-09-27 | 1970-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-03-28 | 1973-09-27 | 1974-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-03-28 | 1977-09-27 | 1978-03-29 | $7700.00 | Window Closed / Lapsed |