Method for manufacturing insulation separating the active regions of a VLSI CMOS circuit

Claim 1

A method for the manufacture of CMOS circuits which comprises: providing a p-doped silicon substrate, applying an implantation mask consisting of resist and silicon nitride over portions of said substrate, implanting and diffusing ions into said substrate through said mask to form an n-doped zone (n-well), removing said resist after said implanting of ions, oxidizing the surface of said substrate to produce an oxide layer thereover, implanting ions into said substrate to form a p-doped zone of lesser depth than said n-doped zone, depositing and structuring a layer of silicon nitride over said substrate to cover said n-doped zone while leaving portions of said p-doped zone in which field implantation is to occur uncovered, injecting boron ions into the uncovered portions, generating field oxide regions in said p-doped zone by local oxidation using the silicon nitride as a mask, removing the silicon nitride masking, masking the oxide layer over the p-doped zones with a photoresist layer while leaving portions of said n-doped zone uncovered, and etching moats into the oxide layer over said n-doped zone to provide ridges which insulate active regions of said substrate from one another.

Claim 2

A method for the manufacture of CMOS circuits which comprises: providing a p-doped silicon substrate, applying an implantation mask consisting of resist and silicon nitride over portions of said substrate, implanting and diffusing ions into said substrate through said mask to form an n-doped zone (n-well), removing said resist after said implanting of ions, oxidizing the surface of said substrate to produce an oxide layer thereover, implanting ions into said substrate to form a p-doped zone of lesser depth than said n-doped zone, depositing and structuring a layer of silicon nitride over said substrate to cover said n-doped zone while leaving portions of said p-doped zone in which field implantation is to occur uncovered, injecting boron ions into the uncovered portions, generating field oxide regions in said p-doped zone by local oxidation using the silicon nitride as a mask, removing the silicon nitride masking, masking the oxide layer over the p-doped zones with a photoresist layer while leaving portions of said n-doped zone uncovered, and etching moats into the oxide layer over said n-doped zone to provide ridges which insulate active regions of said substrate from one another.

Claim 5

A method for the manufacture of CMOS circuits which comprises: providing a silicon substrate doped with ions of one conductivity type, applying an implantation mask consisting of a resist and silicon nitride over portions of said substrate, implanting and diffusing ions of the opposite conductivity type to form a doped well, removing said resist after said implanting of ions, oxidizing the surface of said substrate to produce an oxide layer thereover, implanting ions of said one conductivity type into said substrate to form a doped zone of lesser depth than said doped well, depositing and structuring a layer of silicon nitride over said substrate to cover said doped well while lealving portions of said doped zone of less depth in which field implantation is to occur uncovered, injecting ions of said second conductivity type into the uncovered portions, generating field oxide regions in said doped zone by local oxidation using the silicon nitride as a mask, removing the silicon nitride masking, masking the oxide layer over said doped zones with a photoresist layer while leaving portions of said doped well uncovered, and etching moats into the oxide layer over said doped well to produce insulating ridge separating the active regions of the substrate.

Claim 6

A method for the manufacture of CMOS circuits which comprises: providing a silicon substrate doped with ions of one conductivity type, applying an implantation mask consisting of a resist and silicon nitride over portions of said substrate, implanting and diffusing ions of the opposite conductivity type to form a doped well, removing said resist after said implanting of ions, oxidizing the surface of said substrate to produce an oxide layer thereover, implanting ions of said one conductivity type into said substrate to form a doped zone of lesser depth than said doped well, depositing and structuring a layer of silicon nitride over said substrate to cover said doped well while lealving portions of said doped zone of less depth in which field implantation is to occur uncovered, injecting ions of said second conductivity type into the uncovered portions, generating field oxide regions in said doped zone by local oxidation using the silicon nitride as a mask, removing the silicon nitride masking, masking the oxide layer over said doped zones with a photoresist layer while leaving portions of said doped well uncovered, and etching moats into the oxide layer over said doped well to produce insulating ridge separating the active regions of the substrate.