US3852104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
•
Filing: 1972-10-02
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Granted: 1974-12-03
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Expires: 1992-10-02
Abstract
Abstract A method of making a semiconductor device employing local or selective oxidation of a semiconductor while non-oxidized areas are protected by an oxidizing mask, wherein cracking of the oxidation mask is reduced by removing the mask edges that overhand a recess etched onto the semiconductor before carrying out the selective oxidation step.
Inventors
- 👤 E Kooi
- 👤 Werdt R De
- 👤 Paffen M Nijdam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:00
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/40; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/053; Y10S148/106; Y10S148/117
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING PROVIDING ON ONE SIDE OF A SEMICONDUCTOR BODY A PATTERNED ETCHANT-RRESISTANT AND OXIDATION-RESISTANT MASKING LAYER, SUBJECTING THE SEMICONDUCTOR BODY TO AN ETCHING TREATMENT WITH AN ETCHANT WHICH DOES NOT SUBSTANTIALLY ATTACK THE MASKING LAYER TO FORM RECESXES IN THE SEMICONDUCTOR BODY AT THE UNMASKED AREAS, THE SEMICONDUCTOR UNDERETCHING AT THE MASKING LAYER EDGES WHEREBY THE LATTER PROJECT OVER THE RECESSES, THEREAFTER REMOVING THE MASKING LAYER EDGES WHICH PROJECT OVER THE RECESSES, AND THEREAFTER SUBJECTING THE MASKED BODY TO AN OXIDATION TREATMENT WITH THE MASKING LAYER IN PLACE TO FORM AN OXIDE INSET IN THE BODY AT THE RECESSES, SAID OXIDATION TREATMENT BEING CONTINUED UNTIL THE SURFACE OF THE GROWN OXIDE REACHES AT LEAST THE LEVEL OF THE MASKING LAYER.
Claim 2
Independent Claim
127 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING PROVIDING ON ONE SIDE OF A SEMICONDUCTOR BODY A PATTERNED ETCHANT-RRESISTANT AND OXIDATION-RESISTANT MASKING LAYER, SUBJECTING THE SEMICONDUCTOR BODY TO AN ETCHING TREATMENT WITH AN ETCHANT WHICH DOES NOT SUBSTANTIALLY ATTACK THE MASKING LAYER TO FORM RECESXES IN THE SEMICONDUCTOR BODY AT THE UNMASKED AREAS, THE SEMICONDUCTOR UNDERETCHING AT THE MASKING LAYER EDGES WHEREBY THE LATTER PROJECT OVER THE RECESSES, THEREAFTER REMOVING THE MASKING LAYER EDGES WHICH PROJECT OVER THE RECESSES, AND THEREAFTER SUBJECTING THE MASKED BODY TO AN OXIDATION TREATMENT WITH THE MASKING LAYER IN PLACE TO FORM AN OXIDE INSET IN THE BODY AT THE RECESSES, SAID OXIDATION TREATMENT BEING CONTINUED UNTIL THE SURFACE OF THE GROWN OXIDE REACHES AT LEAST THE LEVEL OF THE MASKING LAYER.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1 wherein the patterned masking layer has edges which form at least one angle larger than 180*.
Claim 4
Dependent Claim
13 words
A method as claimed in claim 2 wherein the angle is approximately 270*.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1 wherein the projecting edges of the masking layer are removed by means of an etching treatment employing etchants which selectively attack said layer.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 4 wherein the masking layer comprises silicon nitride.
References Cited (Backward Citations)
US3425879A
Cited
US3418227A
Cited
US3578515A
Cited
US3580735A
Cited
US3755001A
Cited
US3706129A
Cited
US3796612A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-02 | 1978-06-03 | 1978-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-02 | 1982-06-03 | 1982-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-02 | 1986-06-03 | 1986-12-03 | $7700.00 | Window Closed / Lapsed |